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FA3629 C3265 1N4613C DT014 V800ME11 ZSR520N8 SIL05 EMA212
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  dense Datasheet PDF File

For dense Found Datasheets File :: 1578    Search Time::1.344ms    
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    ANPEC[Anpec Electronics Coropration]
N.A.
ETC[ETC]
Anpec Electronics Corporation
Part No. APM4800 APM4800KC-TR APM4800KC-TU
OCR Text ...22m(typ.) @ VGS=4.5V Super High dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged SO-8 Package Pin Description SO-8 S S S G 1 2 3 4 8 7 6 5 D D D D Top View Applications * Power Management in Notebook C...
Description N-Channel Enhancement Mode MOSFET

File Size 147.46K  /  9 Page

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    SAMHOP[SamHop Microelectronics Corp.]
Part No. SDB60N03L SDP60N03L
OCR Text ...0V F E AT UR E S S uper high dense cell design for extremely low R DS (ON). High power and current handling capability. TO-220 & TO-263 package. ID 56A R DS (on) ( m W ) Max 11 @ V G S = 10V 19 @ V G S = 4.5V D D G D S G ...
Description N-Channel Logic Level E nhancement Mode Field E ffect Transistor

File Size 473.37K  /  6 Page

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    STS2308A

SAMHOP[SamHop Microelectronics Corp.]
Part No. STS2308A
OCR Text ....7A R DS (ON) S uper high dense cell design for low R DS (ON). 80 @ V G S = 4.5V 110 @ V G S = 2.5V R ugged and reliable. S OT-23 package. D S OT-23 D S G G S AB S OL UTE MAXIMUM R ATING (TA=25 C unles s otherwis e...
Description N-Channel Enhancement Mode Field Effect Transistor

File Size 647.50K  /  7 Page

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    CEP02N6

Chino-Excel Technology
Part No. CEP02N6
OCR Text ... RDS(ON)=5 @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. D G D G G D S S CEB SERIES TO-263(DD-PAK) CEP SERIES TO-220 S ABSOLUTE ...
Description N-channel Enhancement Mode Field Effect Transistor TO220/TO263 Package

File Size 42.57K  /  5 Page

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    EUDYNA[Eudyna Devices Inc]
Part No. FLD5F15CX-A
OCR Text ...plication of 2.5 Gb/s long haul dense Wavelength Division Multiplexing (DWDM). Transmission spans of 3200ps/nm are possible. DESCRIPTION This high power laser is capable of 2.5 Gb/s transmission. It is packaged in a "butterfly" type mod...
Description 1,550nm DWDM Direct Modulation DFB Laser

File Size 295.20K  /  6 Page

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    EUDYNA[Eudyna Devices Inc]
Part No. FLD5F15CX-E
OCR Text ...plication of 2.5 Gb/s long haul dense Wavelength Division Multiplexing (DWDM). Transmission spans of 100km (1800ps/nm) are possible. DESCRIPTION The laser is capable of 2.5 Gb/s transmission. It is packaged in a "butterfly" type module....
Description 1,550nm DWDM Direct Modulation DFB Laser

File Size 293.74K  /  6 Page

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    EUDYNA[Eudyna Devices Inc]
Part No. FLD5F15CX-J
OCR Text ...plication of 2.5 Gb/s long haul dense Wavelength Division Multiplexing (DWDM). Transmission spans of 100 km (1800ps/nm) are possible. DESCRIPTION The laser is a high power laser capable of 2.5 Gb/s transmission. It is packaged in a "but...
Description 1,550nm DWDM Direct Modulation DFB Laser

File Size 229.55K  /  6 Page

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    LATTICE[Lattice Semiconductor]
Part No. OR2C06A OR2C10A-2M84 OR2T08A OR2T40A OR2C12A OR2T26A OR2T40B OR2T04A OR2C04A OR2C08A OR2C10A OR2C15A OR2C26A OR2C40A OR2T06A OR2T10A OR2T12A OR2T15A OR2T15B
OCR Text ...nable and 3-state buffers Fast, dense multipliers can be created with the multiplier mode (4 x 1 multiplier/PFU): -- 8 x 8 multiplier requires only 16 PFUs -- 30% increase in speed Flip-flop/latch options to allow programmable priority of s...
Description From old datasheet system
Field-Programmable Gate Arrays

File Size 929.11K  /  192 Page

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    SAMHOP[SamHop Microelectronics Corp.]
Part No. SDB55N02 SDP55N02
OCR Text ... DS (on) ( m W ) S uper high dense cell design for extremely low R DS (ON). High power and current handling capability. TO-220 & TO-263 package. 19 @ V G S = 4.5V D D G D S G S G S DP S E R IE S TO-220 S DB S E R IE ...
Description N-Channel E nhancement Mode Field E ffect Transistor

File Size 455.99K  /  6 Page

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    SAMHOP[SamHop Microelectronics Corp.]
Part No. SDB65N03L SDP65N03L SDB65N03
OCR Text ...65A R DS (on) S uper high dense cell design for extremely low R DS (ON). High power and current handling capability. TO-220 & TO-263 package. 8 @ V G S = 10V 12 @ V G S = 4.5V D D G D S G S G S DP S E R IE S TO-220 ...
Description N-Channel Logic Level E nhancement Mode Field E ffect Transistor

File Size 373.02K  /  5 Page

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For dense Found Datasheets File :: 1578    Search Time::1.344ms    
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