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SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
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Part No. |
KBE00G003M-D411 KBE00G003M-D4110
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OCR Text |
...when active high, commands are latched into the command register th rough the i/o ports on the rising edge of the we signal. ale address l...4 i/o 5 i/o 6 i/o 7 1st cycle a 0 a 1 a 2 a 3 a 4 a 5 a 6 a 7 2nd cycle a 9 a 10 a 11 a 12 a 13 a 14... |
Description |
NAND 512Mb*2 Mobile SDRAM 256Mb*2 NAND闪存12Mb * 2移动SDRAM 256Mb 2 SPECIALTY MEMORY CIRCUIT, PBGA107
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File Size |
1,254.33K /
89 Page |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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Part No. |
KM29U128T
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OCR Text |
... low while ce is low. data is latched on the rising edge of we . command latch enable(cle) and address latch enable(ale) are used to mult...4 - - output low voltage level v ol i ol =2.1ma - - 0.4 output low current(r/ b ) i ol (r/ b ) v ol ... |
Description |
16M x 8 Bit NAND Flash Memory
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File Size |
484.80K /
26 Page |
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it Online |
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Atmel
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Part No. |
AT29C020
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OCR Text |
...56 bytes of data are internally latched, freeing the address and data bus for other operations. following the initiation of a program cycle,...4-megabit densities and, with each density ? ssectorsizein a memory map, have the system software ap... |
Description |
2M bit, 5-Volt Read and 5-Volt Write Flash
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File Size |
232.37K /
17 Page |
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it Online |
Download Datasheet
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聚兴科技股份有限公司
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Part No. |
AT28C64-25SI
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OCR Text |
...write, the address and data are latched inter- nally, freeing the microprocessor address and data bus for other operations. following the in...4 notes: 1. x can be v il or v ih . 2. refer to ac programming waveforms. 3. v h = 12.0v 0.5v. ... |
Description |
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File Size |
236.27K /
12 Page |
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it Online |
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Price and Availability
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