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ms-034 Datasheet PDF File

For ms-034 Found Datasheets File :: 3614 Search Time::1.891ms
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				IXYS Corporation
Part No.	IXGH25N100AU1 IXGH25N100U1
OCR Text	...t TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, T VJ = 125C, RG = 33 Clamped inductive load, L = 100 H TC = 25C Maximum Ratings 1000 1000...034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 IXGH25N100U1 IXGH25N100AU1 ...
Description	High speed IGBT with Diode
File Size	309.56K / 6 Page	View it Online	Download Datasheet

				IXYS, Corp.
Part No.	IXGH25N100AU1
OCR Text	... = 90 c25a i cm t c = 25 c, 1 ms 100 a ssoa v ge = 15 v, t vj = 125 c, r g = 33 w i cm = 50 a (rbsoa) clamped inductive load, l = 10...034,796 5,063,307 5,237,481 5,381,025 ixys reserves the right to change limits, test conditions, an...
Description	High speed IGBT with Diode 50 A, 1000 V, N-CHANNEL IGBT, TO-247AD
File Size	315.47K / 6 Page	View it Online	Download Datasheet

				IXYS[IXYS Corporation]
Part No.	IXGP12N60U1
OCR Text	...t TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, T VJ = 125C, RG = 150 Clamped inductive load, L = 300 H TC = 25C Maximum Ratings 600 600 ...034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 IXGP12N60U1 Fig. 1 Saturatio...
Description	Low VCE(sat) IGBT with Diode Combi Pack IXGP12N60U1
File Size	94.50K / 6 Page	View it Online	Download Datasheet

				ALPHA[Alpha Industries] Alpha Industries Inc
Part No.	AFM06P2-000
OCR Text	....0 160.0 5.0 Max. 270.0 Unit mA mS -V -V dBm dB % dBm dB % C/W Alpha Industries, Inc. [781] 935-5150 * Fax [617] 824-4579 * Email sales@a...034 0.033 0.033 0.033 0.034 0.034 0.035 0.036 0.037 0.039 0.040 0.042 0.043 0.045 0.047 0.048 0.050 ...
Description	KA BAND, GaAs, N-CHANNEL, RF POWER, MESFET Ka Band Power GaAs MESFET Chip
File Size	19.21K / 3 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	BUL45-D
OCR Text	...) pulse test: pulse width = 5.0 ms, duty cycle 10%. on semiconductor ? semiconductor components industries, llc, 2002 april, 2002 rev...034 1000 1500 2500 9 t, time (ns) t, time (ns) 135 0 500 3000 4 5 7 8 10 11 13 14 250 50 300 1200 1 ...
Description	NPN Silicon Power Transistor High Voltage SWITCHMODE Series Power 5A 400V SM
File Size	162.98K / 12 Page	View it Online	Download Datasheet

				http:// Filtronic Compound Semiconductors
Part No.	EB1500DFN-AJ FPD1500DFN1
OCR Text	... = 1.5 mA IGD = 1.5 mA mA mA mS A V V V Note: TAMBIENT = 22; RF specification measured at f = 1850 MHz using CW signal (except as note...034 0.022 0.022 0.023 0.020 0.035 0.027 0.031 0.041 Bias 5V, 25%IDSS Freq (GHz) 0.900 1.800 2.000 2....
Description	LOW NOISE HIGH LINEARITY PACKAGED PHEMT
File Size	323.07K / 10 Page	View it Online	Download Datasheet

				NEC, Corp. NEC Corp. NEC[NEC]
Part No.	NE76084 NE76084-SL NE76084-T1 NE76084-T1A
OCR Text	...UNIT TEST CONDITIONS A mA V mS dB dB VGS = -4 V VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 100 A VDS = 3 V, IDS = 10 mA VDS = 3 V, IDS = 1...034 0.044 0.053 0.062 0.069 0.075 0.081 0.085 0.089 0.092 0.094 0.095 0.096 0.097 0.098 0.099 0.100 ...
Description	C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET C到Ku波段低噪声放大器N沟道砷化镓场效应晶体
File Size	61.06K / 12 Page	View it Online	Download Datasheet

				Hexawave, Inc
Part No.	HWF1686YC
OCR Text	...es Conditions Units mA V mS C/W dBm dB % dBm Min. 300 -3.5 29.0 15 - Typ. 400 -2.0 200 20 30.0 16 45 45 Max. 600 -1.5 28 ...034 0.034 0.035 0.035 0.035 0.035 0.036 0.036 0.036 0.036 0.036 0.035 0.034 0.034 0.035 0.037 0.039 ...
Description	L-Band Power FET Via Hole Chip
File Size	103.34K / 3 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers ETC[ETC] Excelics Semiconductor, Inc.
Part No.	EFC240B
OCR Text	...00 520 280 -2.5 720 mA mS -4.0 V V V o Drain Breakdown Voltage Igd=2.4mA Source Breakdown Voltage Igs=2.4mA Thermal Resis...034 0.034 0.035 0.034 0.035 0.035 0.036 0.038 0.036 S12 Ang 41.9 22.7 13.2 6.7 2.7 0.1 -2.2 -3.4 -4....
Description	Low Distortion GaAs Power FET
File Size	27.53K / 2 Page	View it Online	Download Datasheet

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