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  rg-140 u Datasheet PDF File

For rg-140 u Found Datasheets File :: 6588    Search Time::0.891ms    
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    IRFZ24NSPBF

International Rectifier
Part No. IRFZ24NSPBF
OCR Text ...- VDD = 28V --- ID = 10A ns --- RG = 24 --- RD = 2.6, See Fig. 10 Between lead, nH 7.5 --- and center of die contact 370 --- VGS = 0V 140 --- pF VDS = 25V 65 --- = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS ISM ...
Description HEXFET Power MOSFET

File Size 817.34K  /  10 Page

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    IRF[International Rectifier]
Part No. IRL3215PBF
OCR Text ... 45 --- ID = 7.2A ns --- 38 --- RG = 12, VGS = 5.0V --- 36 --- RD = 10.2, See Fig. 10 Between lead, 4.5 nH 6mm (0.25in.) G from package -...140 --- pF VDS = 25V --- 70 --- = 1.0MHz, See Fig. 5 D S Source-Drain Ratings and Characte...
Description HEXFET Power MOSFET

File Size 171.33K  /  8 Page

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    IRFP4227PBF

International Rectifier
IR
Part No. IRFP4227PBF
OCR Text ...S = 10Ve VDD = 160V, VGS = 15V, RG= 4.7 L = 220nH, C= 0.4F, VGS = 15V VDS = 160V, RG= 4.7, TJ = 25C L = 220nH, C= 0.4F, VGS = 15V VDS = 160V...140 33 --- 39 Diode Characteristics Parameter IS @ TC = 25C Continuous Source Current (Body Dio...
Description    PDP SWITCH

File Size 298.12K  /  8 Page

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    IRF[International Rectifier]
Part No. IRL3803VSPBF IRL3803VLPBF
OCR Text ... --- VDD = 15V --- ID = 71A --- RG = 1.3 --- VGS = 4.5V, See Fig. 10 Between lead, 4.5 --- 6mm (0.25in.) nH G from package 7.5 --- and cent...140 showing the A G integral reverse --- --- 470 S p-n junction diode. --- --- 1.2 V TJ = 25C, IS = ...
Description HEXFET Power MOSFET

File Size 267.04K  /  10 Page

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    IRF[International Rectifier]
Part No. IRL3803V
OCR Text ... --- VDD = 15V --- ID = 71A --- RG = 1.3 --- VGS = 4.5V, See Fig. 10 Between lead, 4.5 --- 6mm (0.25in.) nH G from package 7.5 --- and cent...140 showing the A G integral reverse --- --- 470 S p-n junction diode. --- --- 1.2 V TJ = 25C, IS = ...
Description 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 131.97K  /  8 Page

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    IRLU3714 IRLR3714 IRLR3714TR

International Rectifier
Part No. IRLu3714 IRLR3714 IRLR3714TR
OCR Text ...- VDD = 10V --- ID = 14A ns --- RG = 1.8 --- VGS = 4.5V --- VGS = 0V --- VDS = 10V --- pF = 1.0MHz Avalanche Characteristics Symbol E...140 --- --- --- --- --- --- --- 1.3 0.88 --- 35 53 34 51 35 53 35 53 V ns nC ns nC VSD trr Q rr t...
Description SMPS MOSFET
HEXFET? Power MOSFET
20V Single N-Channel HEXFET Power MOSFET in a D-Pak package
20V Single N-Channel HEXFET Power MOSFET in a I-Pak package

File Size 109.73K  /  10 Page

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    IRF[International Rectifier]
Part No. IRHM4250 IRHM7250 IRHM8250 IRHM3250 JANSR2N7269
OCR Text ...DS = 100V VDD = 100V, ID = 26A, RG = 2.35 IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-O...
Description RADIATION HARDENED POWER MOSFET THRu-HOLE (TO-254AA)

File Size 272.45K  /  13 Page

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    IRLI3705N IRLI3705

IRF[International Rectifier]
Part No. IRLI3705N IRLI3705
OCR Text ...- VDD = 28V --- ID = 46A ns --- RG = 1.8, VGS = 5.0V --- RD = 0.59, See Fig. 10 D Between lead, 4.5 --- 6mm (0.25in.) nH G from package 7.5...140 440 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = ...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
HEXFET? Power MOSFET

File Size 103.68K  /  8 Page

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    IRG4BH20K-SPBF

International Rectifier
Part No. IRG4BH20K-SPBF
OCR Text ..., VCC = 960V 270 400 VGE = 15V, RG = 50 0.45 -- Energy losses include "tail" 0.44 -- mJ See Fig. 9,10,14 0.89 1.2 -- -- s VCC = 720V, TJ = 1...140 160 TC , Case Temperature ( C) TTJ ,, Junction Temperature( (C ) J Junction Temperature C)...
Description INSuLATED GATE BIPOLAR TRANSISTOR

File Size 258.86K  /  10 Page

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    IRG4RC10UD IRG4RC10UDTR IRG4RC10UDTRL IRG4RC10UDTRR

International Rectifier
Part No. IRG4RC10uD IRG4RC10uDTR IRG4RC10uDTRL IRG4RC10uDTRR
OCR Text ...5.0A, VCC = 480V 130 VGE = 15V, RG = 100 210 Energy losses include "tail" and -- diode reverse recovery. -- mJ See Fig. 9, 10, 18 0.33 -- TJ...140 160 TC , Case Temperature ( C) TJ , Junction Temperature ( C) Fig. 4 - Maximum Collec...
Description 600V ultraFast 8-60 kHz Copack IGBT in a D-Pak package
INSuLATED GATE BIPOLAR TRANSISTOR WITH uLTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.15V, @Vge=15V, Ic=5.0A)

File Size 189.12K  /  10 Page

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For rg-140 u Found Datasheets File :: 6588    Search Time::0.891ms    
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