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40200 G106K CLL133W W6810IE TL0810 1A472 2SD20 645ET
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Part No. MT41K256M4JP-125G
OCR Text ... 8 banks refresh count 8k 8k 8k row address 16k a[13:0] 16k a[13:0] 8k a[12:0] 1gb: x4, x8, x16 ddr3l sdram addendum description pdf: 09005aef833b7221 1gb_1_35v_ddr3l.pdf - rev. f 2/11 en 1 micron technology, inc. reserves the right to chan...
Description 256M X 4 DDR DRAM, PBGA78

File Size 446.14K  /  21 Page

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    EPF8452A EPF81500A EPF81188A EPF8636A EPF8820A EPF8282A EPF8282AV FLEX8000

ALTERA[Altera Corporation]
Part No. EPF8452A EPF81500A EPF81188A EPF8636A EPF8820A EPF8282A EPF8282AV FLEX8000
OCR Text ... are located at the end of each row (horizontal) and column (vertical) FastTrack Interconnect path. Altera Corporation 5 FLEX 8000 Programmable Logic Device Family Data Sheet Logic Array Block A logic array block (LAB) consists...
Description programmable logic device family   FLEX8000包括EPF8282A.
PROGRAMMABLE LOGIC DEVICES FAMILY

File Size 425.22K  /  61 Page

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Part No. MD16R1624EG0-CM8
OCR Text ...nd data buses with independent row and column control yield over 95% bus efficiency. the rdram device multi-bank architecture supports up to four simultaneous transactions per device. features ? 2 independent rdram channels, 1 pass thro...
Description 32M X 32 RAMBUS MODULE, DMA232

File Size 254.42K  /  16 Page

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    ES4428 ES4427

ESS Technology
ETC[ETC]
List of Unclassifed Manufacturers
Part No. ES4428 ES4427
OCR Text ...enable. DRAM write enable. DRAM row address strobe 0. DRAM row address strobe 1 (active-low). DRAM address bus select 1 output. Only active in 64Mb SDRAM mode. DRAM row address strobe 2 output. DRAM address bus select 0 output. Only active ...
Description Web/DVD Set-Top Box Solution

File Size 119.20K  /  10 Page

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Part No. MD16R1624DF0-CM8 MD18R1628DF0-CM8 MD16R162GDF0-CM8
OCR Text ...nd data buses with independent row and column control yield over 95% bus efficiency. the rdram device multi-bank architecture supports up to four simultaneous transactions per device. features 2 independent rdram channels, 1 pass throu...
Description 32M X 32 RAMBUS MODULE, DMA232
64M X 36 RAMBUS MODULE, DMA232
128M X 32 RAMBUS MODULE, DMA232

File Size 185.93K  /  16 Page

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    K4E160411D K4E160412D K4E170411D K4E170412D K4E16704112D K4E160411D-B K4E160412D-B K4E160411D-F K4E160412D-F K4E170411D-

SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4E160411D K4E160412D K4E170411D K4E170412D K4E16704112D K4E160411D-B K4E160412D-B K4E160411D-F K4E160412D-F K4E170411D-B K4E170411D-F K4E170412D-F K4E170412D-B
OCR Text ...of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref. or 4K Ref.), access time (-50 or -60), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are...
Description 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.
4M x 4Bit CMOS Dynamic RAM with Extended Data Out Data Sheet
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle.
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle.
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle.

File Size 254.50K  /  21 Page

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    K4F160411D K4F160412D K4F170411D K4F170412D K4F160411D-B K4F160411D-F K4F160412D-B K4F160412D-F

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4F160411D K4F160412D K4F170411D K4F170412D K4F160411D-B K4F160411D-F K4F160412D-B K4F160412D-F
OCR Text ...of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref. or 4K Ref.), access time (-50 or -60), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this ...
Description 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle.
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle.
4M x 4Bit CMOS Dynamic RAM with Fast Page Mode

File Size 223.25K  /  20 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. KMM466F104CT1
OCR Text ...te enable oe output enable ras0 row address strobe cas0 - cas7 column address strobe v cc power(+3.3v) v ss ground nc no connection **sda serial address / data i/o **scl serial clock rsvd reserved use rfu reserved for future use dram m...
Description 1M x 64 DRAM SODIMM(1M x 64 ?ㄦ?RAM妯″?)

File Size 397.17K  /  21 Page

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    EM91450B EM91450BP EM91450DK EM91450D EM91450AP EM91450 EM91450A EM91450C EM91450CK

EMC[ELAN Microelectronics Corp]
Part No. EM91450B EM91450BP EM91450DK EM91450D EM91450AP EM91450 EM91450A EM91450C EM91450CK
OCR Text ...terface (column) Output circuit row/Column programming counter HFO HDO RMUTE XMUTE I/O circuit Memory latch & decoder D/A converter DTMF XIN XOUT Oscillator Timing/Control circuit row1 Keyboard interface (row) ...
Description TONE/PULSE DIALER WITH LCD INTERFACE AND I.P.P. DETECT FUNCTION

File Size 212.25K  /  24 Page

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    HM514400B HM514400BL HM514400C HM514400CL HM514400CLS-6 HM514400CLS-7 HM514400CLS-8 HM514400BLTT-6 HM514400BLTT-7 HM5144

Hitachi Semiconductor
Part No. HM514400B HM514400BL HM514400C HM514400CL HM514400CLS-6 HM514400CLS-7 HM514400CLS-8 HM514400BLTT-6 HM514400BLTT-7 HM514400BLTT-8 HM514400CLTT-6 HM514400CLTT-7 HM514400CLTT-8
OCR Text ... address input Data-in/Data-out row address strobe Column address strobe Read/Write enable Output enable Power (+5 V) Ground 4 Block Diagram RAS row Driver row Driver RAS Control Circuit 256 k Memory Array Mat 256 k Me...
Description 1,048,576-word x 4-bit dynamic random access memory, 80ns
1,048,576-word x 4-bit dynamic random access memory, 60ns
1/048/576-word X 4-bit Dynamic Random Access Memory
1,048,576-word x 4-bit dynamic random access memory, 70ns

File Size 231.12K  /  27 Page

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