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  v-pluse Datasheet PDF File

For v-pluse Found Datasheets File :: 935    Search Time::1.422ms    
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    KMA2D4P20S

KEC(Korea Electronics)
Part No. KMA2D4P20S
OCR Text ...1.0 0.6 150 -55 150 125 /W UNIT V V A A W K SOT-23 Pulsed (Note1) Source-Drain Diode Current Drain Power Dissipation Ta=25 Ta=10...Pluse 10-2 0.02 0.01 10-3 10-4 - Duty Factor, D= t1/t2 Tj(max) - Tc - RthJC = PD 10-1 1 ...
Description P-Ch Trench MOSFET

File Size 414.30K  /  5 Page

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    FDP5N50F

Fairchild Semiconductor
Part No. FDP5N50F
OCR Text ...50FT 500 30 4.5* 2.7* 18* Units V V A A mJ A mJ V/ns W W/oC o o Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds C C *Drain current limited by maximum junction te...
Description N-Channel MOSFET, FRFET 500V, 4.5A, 1.55楼?

File Size 796.62K  /  10 Page

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    FDPF5N50 FDP5N50 FDPF5N50TYDTU FDP5N5007

Fairchild Semiconductor Corporation
Part No. FDPF5N50 FDP5N50 FDPF5N50TYDTU FDP5N5007
OCR Text ...500 30 5* 3* 20* FDPF5N50 Units V V A A mJ A mJ V/ns W W/oC o o Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds C C *Drain current limited by maximum junction te...
Description N-Channel MOSFET 500V, 5A, 1.4Ω
N-Channel MOSFET 500V, 5A, 1.4楼?

File Size 258.09K  /  10 Page

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    LESD5Z7.0T1G

Leshan Radio Company
Part No. LESD5Z7.0T1G
OCR Text ...y Height Stand-off Voltage: 2.5 V - 7.0 V Peak Power up to 200 Watts @ 8 x 20 _s Pulse Low Leakage Response Time is Typically < 1 ns ESD Rat...pluse test current IT at an ambient temperature of 25 2/6 LESHAN RADIO COMPANY, LTD. LESD5Z...
Description Transient Voltage Suppressors for ESD Protection

File Size 522.47K  /  6 Page

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    2SK2930

Hitachi,Ltd.
Hitachi Semiconductor
Part No. 2SK2930
OCR Text ... 105 50 150 -55 to +150 Unit V V A A A A mJ W C C EAR Pch Tch Tstg 1. PW 10s, duty cycle 1 % 2. Value at Tc = 25C 3. Value ...Pluse Test 0 0.4 0.8 1.2 1.6 V SD (V) 2.0 Source to Drain Voltage 25 0 25 50 75 100 125 150 Ch...
Description Silicon N Channel MOS FET High Speed Power Switching 通道场效应晶体管高速电源开

File Size 52.05K  /  10 Page

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    SSF3641

Silikron Semiconductor Co.,LTD.
Part No. SSF3641
OCR Text ...4.2 -30 2.0 -55 To 150 Unit V V A A A W VDS VGS ID25 ID70 IDM PD TJ,TSTG Drain Current-Continuous@ Current-Pulsed (Note 1) Max...Pluse Duration(sec) Figure 14 Normalized Maximum Transient Thermal Impedance (c)Silikron Semicond...
Description PWM applications

File Size 398.25K  /  7 Page

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    SSM4228GM SSM4228M

Silicon Standard Corp.
Part No. SSM4228GM SSM4228M
OCR Text ... -55 to 150 -55 to 150 Units V V A A A A W/C C C Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Ju...Pluse Duty factor = t/T Peak Tj = P DM x Rthja + Ta DC 0.001 0.01 0.1 1 10 100 0.0001 ...
Description DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS

File Size 146.45K  /  6 Page

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    STR-X6759N

Allegro MicroSystems
Part No. STR-X6759N
OCR Text ... to 125C Single pulse, VDD = 30 V, L = 50 mH, ILpeak = 4.4 A Rating 22 22 500 35 -0.5 to 6.0 10 -0.5 to 9.0 -1.5 to 5.0 46 2.8 0.8 -20 to 12...pluse A.S.O. temperature derating coefficient (%) 80 10 0.1ms 60 I D [A] Drain Curre...
Description Off-Line Quasi-Resonant Switching Regulators

File Size 521.39K  /  11 Page

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    SSF8205A

Silikron Semiconductor Co.,LTD.
Part No. SSF8205A
OCR Text ...10 6 25 1.5 -55 To 150 Unit V V A A W 83 /W ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted) Parameter Symbol Conditio...Pluse Duration(sec) Figure 14 Normalized Maximum Transient Thermal Impedance (c)Silikron Semic...
Description Battery protection

File Size 515.86K  /  7 Page

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    SSF8205

Silikron Semiconductor Co.,LTD.
Part No. SSF8205
OCR Text ...0 4 25 1.25 -55 To 150 Unit V V A A W VDS VGS ID IDM PD TJ,TSTG THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (...Pluse Duration(sec) Figure 14 Normalized Maximum Transient Thermal Impedance (c)Silikron Semic...
Description Battery protection

File Size 402.51K  /  7 Page

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