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DIODES[Diodes Incorporated] Diodes Inc.
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Part No. |
2N7002-01
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OCR Text |
... = 150W, VGEN = 10V, RGEN = 25W vds = 25V, VGS = 0V f = 1.0MHz Test Condition VGS = 0V, ID = 10mA vds = 60V, VGS = 0V VGS = 20V, vds = 0V vds = VGS, ID =-250mA VGS = 5.0V, ID = 0.05A VGS = 10V, ID = 0.5A VGS = 10V, vds = 7.5V vds =10V, ID =... |
Description |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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File Size |
61.72K /
3 Page |
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DIODES[Diodes Incorporated]
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Part No. |
2N7002DW
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OCR Text |
... = 150W, VGEN = 10V, RGEN = 25W vds = 25V, VGS = 0V f = 1.0MHz Test Condition VGS = 0V, ID = 10mA vds = 60V, VGS = 0V VGS = 20V, vds = 0V vds = VGS, ID =-250mA VGS = 5.0V, ID = 0.05A VGS = 10V, ID = 0.5A VGS = 10V, vds = 7.5V vds =10V, ID =... |
Description |
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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File Size |
64.65K /
3 Page |
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it Online |
Download Datasheet |
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Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc] http://
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Part No. |
2N7002LT1 ON0106
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OCR Text |
...Voltage Drain Current (VGS = 0, vds = 60 Vdc) Gate-Body Leakage Current, Forward (VGS = 20 Vdc) Gate-Body Leakage Current, Reverse (VGS = - 20 Vdc) 1. 2. 3. 4. TJ = 25C TJ = 125C V(BR)DSS IDSS IGSSF IGSSR 60 -- -- -- -- -- -- -- -- -- -- 1.... |
Description |
CASE 318-08, STYLE 21 SOT-23 (TO-236AB) 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB From old datasheet system
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File Size |
92.99K /
6 Page |
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it Online |
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DIODES[Diodes Incorporated]
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Part No. |
2N7002T
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OCR Text |
... = 150W, VGEN = 10V, RGEN = 25W vds = 25V, VGS = 0V f = 1.0MHz Test Condition VGS = 0V, ID = 10mA vds = 60V, VGS = 0V VGS = 20V, vds = 0V vds = VGS, ID =-250mA VGS = 5.0V, ID = 0.05A VGS = 10V, ID = 0.5A VGS = 10V, vds = 7.5V vds =10V, ID =... |
Description |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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File Size |
83.69K /
3 Page |
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Download Datasheet |
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Diodes Inc. DIODES[Diodes Incorporated]
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Part No. |
2N7002V 2N7002V-7 2N7002VA-7
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OCR Text |
... = 150W, VGEN = 10V, RGEN = 25W vds = 25V, VGS = 0V f = 1.0MHz Test Condition VGS = 0V, ID = 10mA vds = 60V, VGS = 0V VGS = 20V, vds = 0V vds = VGS, ID = 250mA VGS = 5V, ID = 0.05A, VGS = 10V, ID = 0.5A, Tj = 125C VGS = 10V, vds = 7.5V vds ... |
Description |
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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File Size |
67.17K /
3 Page |
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it Online |
Download Datasheet |
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Diodes Inc. DIODES[Diodes Incorporated]
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Part No. |
2N7002W
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OCR Text |
... = 150W, VGEN = 10V, RGEN = 25W vds = 25V, VGS = 0V f = 1.0MHz Test Condition VGS = 0V, ID = 10mA vds = 60V, VGS = 0V VGS = 20V, vds = 0V vds = VGS, ID =-250mA VGS = 5.0V, ID = 0.05A VGS = 10V, ID = 0.5A VGS = 10V, vds = 7.5V vds =10V, ID =... |
Description |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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File Size |
67.04K /
3 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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