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ST Microelectronics
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| Part No. |
STP8NA50FI
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| OCR Text |
...ate drain current v ds >i d(on) xr ds(on)max v gs =10v 8a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * )forward transconductance v ds >i d(on) xr ds(on)max i d =4a 4.5 6.5 s c iss c oss c rss input capacitance outpu... |
| Description |
N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
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| File Size |
206.41K /
10 Page |
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it Online |
Download Datasheet
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ST Microelectronics
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| Part No. |
STB10NC50-1
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| OCR Text |
...te drain current v ds >i d(o n) xr ds(on )ma x v gs =10v 10 a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * )forward...e 2.44 2.64 0.096 0.104 e 10 10.28 0.393 0.404 l 13.2 13.5 0.519 0.531 l1 3.48 3.78 0.137 0.149 l2 1... |
| Description |
N-CHANNEL POWER MOSFET
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| File Size |
194.20K /
7 Page |
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it Online |
Download Datasheet |
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意法半导
STMicroelectronics N.V.
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| Part No. |
STB5NB60
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| OCR Text |
...te drain current v ds >i d(o n) xr ds(on )ma x v gs =10v 5a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * )forward t...e 2.44 2.64 0.096 0.104 e 10 10.28 0.393 0.404 l 13.2 13.5 0.519 0.531 l1 3.48 3.78 0.137 0.149 l2 1... |
| Description |
N-Channel 600V-1.8Ω-5A- I2PAK PowerMESHTM MOSFET(N沟道MOSFET) N沟道600V.8Ω- 5A I2PAK PowerMESHTM MOSFET的（不适用沟道MOSFET的）
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| File Size |
86.01K /
8 Page |
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it Online |
Download Datasheet |
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意法半导
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| Part No. |
STB60NE06L-16
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| OCR Text |
...ate drain current v ds >i d(on) xr ds(on)max v gs =10v 60 a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * )forward transconductance v ds >i d(on) xr ds(on)max i d =30 a 22 23 s c iss c oss c rss input capacitance out... |
| Description |
N-Channel 60V-0.014Ω-60A-D2PAK “SINGLE FEATURE SIZETMPower MOSFET(N沟道功率MOSFET)
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| File Size |
38.09K /
5 Page |
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it Online |
Download Datasheet |
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Price and Availability
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