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				Toshiba Semiconductor ROHM[Rohm]
Part No.	2SD2607 2SB1668
OCR Text	...rnal dimensions (Units: mm) 10.0 4.5 3.2 2.8 15.0 12.0 8.0 5.0 1.2 14.0 1.3 0.8 !Absolute maximum ratings (Ta = 25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector curren...
Description	FOR POWER AMPLIFICATION (100V, 8A)
File Size	49.66K / 1 Page	View it Online	Download Datasheet

				FUJI ELECTRIC HOLDINGS CO., LTD. FUJI[Fuji Electric]
Part No.	2SK2250-01S 2SK2250-01L
OCR Text	...h=25C Min. 250 2,5 Typ. 3,0 10 0,2 10 1,2 1,5 250 50 15 25 20 50 15 Max. 3,5 500 1,0 100 2,0 380 80 25 40 30 80 25 2 4 1,4 0,7 2 0,9 80 0,2 Unit V V A mA nA S pF pF pF ns ns ns ns A A A V ns C - Thermal Characterist...
Description	N-channel MOS-FET 2 A, 250 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET
File Size	187.84K / 2 Page	View it Online	Download Datasheet

				FUJI[Fuji Electric]
Part No.	2SK2641-01
OCR Text	...d N-channel MOS-FET 500V 0,9 10A 100W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum Ratings ( T C...
Description	N-channel MOS-FET
File Size	295.16K / 2 Page	View it Online	Download Datasheet

				Fuji Electric
Part No.	2SK2641-01
OCR Text	...d N-channel MOS-FET 500V 0,9 10A 100W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum Ratings ( T C...
Description	N-channel MOS-FET
File Size	300.46K / 3 Page	View it Online	Download Datasheet

				FUJI[Fuji Electric]
Part No.	2SK2767-01
OCR Text	...h=25C Min. 900 3,5 Typ. 4,0 10 0,2 10 4,0 2 450 75 40 20 40 50 25 1 500 3 Max. 4,5 500 1,0 100 5,5 3,5 Unit V V A mA nA S pF pF pF ns ns ns ns A V ns C - Thermal Characteristics Item Thermal Resistance Symbol R th(ch-a...
Description	N-channel MOS-FET
File Size	288.81K / 2 Page	View it Online	Download Datasheet

				NEC, Corp. NEC Corp.
Part No.	2SK3404 2SK3404-ZJ 2SK3404-ZK
OCR Text	... Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25C) Drain Current (Pulse) Note VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 30 20 40 160 1.5 40 150 -55 to +150 V V A A W W C C To...
Description	SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE 开关N沟道功率MOSFET的工业用 Power MOS FET
File Size	67.17K / 8 Page	View it Online	Download Datasheet

				NEC, Corp. NEC Corp.
Part No.	2SK3405 2SK3405-ZK 2SK3405-ZJ
OCR Text	...n-state resistance RDS(on)1 = 9.0 m MAX. (VGS = 10 V, ID = 24 A) * Low gate charge QG = 34 nC TYP. (ID = 48 A, VDD = 16 V, VGS = 10 V) * Built-in gate protection diode * Surface mount device available ABSOLUTE MAXIMUM RATINGS (TA = 25C )...
Description	SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE 开关N沟道功率MOSFET的工业用 Power MOS FET
File Size	1,382.65K / 8 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	2SK3498
OCR Text	...rce ON resistance: RDS (ON) = 4.0 (typ.) High forward transfer admittance: Yfs = 0.6 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 400 V) Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (...
Description	DC-DC Converter/ Relay Drive and Motor Drive Applications DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS
File Size	113.71K / 3 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	2SK3565
OCR Text	...0 -55~150 A W mJ A mJ C C Unit 0.690.15 2.8Max V V V 2.540.25 0.640.15 2.540.25 2.6 123 12.5 Min. 4.50.2 1.1 1.1 Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2)...
Description	MOSFET 2SK/2SJ Series TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (PIE-MOS4)
File Size	185.19K / 3 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	2SK3567
OCR Text	...0 -55~150 A W mJ A mJ C C Unit 0.690.15 2.8Max V V V 2.540.25 0.640.15 2.540.25 123 2.6 12.5 Min. 4.50.2 1.1 1.1 Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) A...
Description	TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (PIE-MOSVI)
File Size	91.51K / 3 Page	View it Online	Download Datasheet

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