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SIEMENS AG
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| Part No. |
BAS70-07
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| OCR Text |
... v r = 70 v i r - - - - 0.1 10 a forward voltage i f = 1 ma i f = 10 ma i f = 15 ma v f - - - 375 705 880 410 750 1000 ...07 oct-07-1999 3 forward current i f = f ( v f ) t a = parameter 0.0 ehb00042 bas 70w/bas 170w... |
| Description |
Silicon Schottky Diode(肖特基硅二极
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| File Size |
76.37K /
4 Page |
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Vishay
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| Part No. |
SUD50N03-07
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| OCR Text |
...) r ds(on) ( ) i d (a) 30 0.007 @ v gs = 10 v 20 30 0.010 @ v gs = 4.5 v 16 d g s n-channel mosfet to-252 s gd top view drain connected to tab order number: sud50n03-07 absolute maximum ratings ( t a = 25 c unless otherwise... |
| Description |
N-Channel Enhancement-Mode Transistor
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| File Size |
69.73K /
4 Page |
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it Online |
Download Datasheet |
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ICS
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| Part No. |
ICS557-07
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| OCR Text |
...r)
* Output, one pair (HCSL, 0.7 V Current mode * Jitter 60 ps (peak-to-peak) * Operating frequency of 80 MHz to 200 MHz
Block Diagram...07 B I n t e gra te d C i r c u i t S y s t e m s
1
525 Race Stre et, San Jo se, CA 9 5126
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| Description |
2:1 Multiplexer Chip for PCI-E
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| File Size |
108.87K /
8 Page |
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it Online |
Download Datasheet |
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Infineon
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| Part No. |
BBY51-07
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| OCR Text |
...= 3 v, v r = 4 v, f = 1 mhz 0.3 0.7 0.5 ? series resistance v r = 1 v, f = 1 ghz 0.37 - r s - case capacitance f = 1 mhz c c - 0.12 pf - 2 - series inductance l s nh -
bby 51-07 oct-05-1999 3 diode capacitance c t = f ( v... |
| Description |
Silicon High Q Hyperabrupt Dual Tunin...
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| File Size |
69.08K /
3 Page |
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it Online |
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Infineon
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| Part No. |
BAT68-07
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| OCR Text |
...nted on alumina 15mm x 17.6mm x 0.7mm)
bat 68-07 oct-07-1999 2 electrical characteristics at t a = 25 c, unless otherwise specified. parameter values symbol unit max. min. typ. dc characteristics breakdown voltage i (br) = 10 a v (b... |
| Description |
Silicon RF Schottky Diode
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| File Size |
83.26K /
4 Page |
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it Online |
Download Datasheet |
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SIEMENS AG
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| Part No. |
BAT68-07
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| OCR Text |
...nted on alumina 15mm x 17.6mm x 0.7mm)
bat 68-07 oct-07-1999 2 electrical characteristics at t a = 25 c, unless otherwise specified. parameter values symbol unit max. min. typ. dc characteristics breakdown voltage i (br) = 10 a v (b... |
| Description |
Silicon Schottky Diode(肖特基硅二极 硅肖特基二极管（肖特基硅二极管）
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| File Size |
74.27K /
4 Page |
View
it Online |
Download Datasheet |
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SIEMENS AG
|
| Part No. |
BBY51-07
|
| OCR Text |
...= 3 v, v r = 4 v, f = 1 mhz 0.3 0.7 0.5 ? series resistance v r = 1 v, f = 1 ghz 0.37 - r s - case capacitance f = 1 mhz c c - 0.12 pf - 2 - series inductance l s nh -
bby 51-07 oct-05-1999 3 diode capacitance c t = f ( v... |
| Description |
Silicon Tuning Diode(硅调谐二极管)
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| File Size |
63.78K /
3 Page |
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it Online |
Download Datasheet |
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