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IXYS Corporation
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Part No. |
IXTY1R4N120P IXTP1R4N120P IXTA1R4N120P
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OCR Text |
... = 0v,-di/dt = 100a/ s v r = 100v ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,68...7a value vs. junction temperature 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 -50 -25 0 25 50 75 100 125 150 t ... |
Description |
N-Channel Enhancement Mode
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File Size |
120.28K /
4 Page |
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it Online |
Download Datasheet |
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ST Microelectronics
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Part No. |
STB11NB40
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OCR Text |
...10.7 a di/dt = 100 a/ m s v dd =100v t j =150 o c (see test circuit, figure 5) 400 3.4 17 ns m c a ( * ) pulsed: pulse duration = 300 m s, duty cycle 1.5 % ( ? ) pulse width limited by safe operating area safe operating area thermal impedan... |
Description |
N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
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File Size |
246.96K /
9 Page |
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it Online |
Download Datasheet |
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Matsshita / Panasonic
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Part No. |
2SD1964 0664
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OCR Text |
...fT ton tstg tf Conditions VCB = 100v, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 2V, IC = 0.1A VCE = 2V, IC = 3A VCE = 2V, IC = 8A IC = 7a, IB = 0.35A IC = 15A, IB = 1.5A IC = 7a, IB = 0.35A IC = 15A, IB = 1.5A VCE = 10V, IC = 0.5A, f ... |
Description |
Power Transistors From old datasheet system
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File Size |
51.06K /
4 Page |
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it Online |
Download Datasheet |
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Price and Availability
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