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  2.5-ghz Datasheet PDF File

For 2.5-ghz Found Datasheets File :: 27147    Search Time::3.031ms    
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    ATF-25170

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-25170
OCR Text ...0 -3.0 Min. Typ. Max. 0.8 1.0 1.2 14.0 11.5 9.0 21.0 15.0 80 100 -2.0 150 -0.8 1.0 GA Gain @ NFO: VDS =3 V, IDS = 20 mA 13.0 P1 dB G1 dB gm IDSS VP Power Output @ 1 dB Gain Compression: VDS =5 V, IDS =50 mA 1 dB Compressed Ga...
Description 0.5-10 GHz Low Noise Gallium Arsenide FET

File Size 40.04K  /  3 Page

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    ATF-25570

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-25570
OCR Text ...z Units dB Min. Typ. Max. 1.0 1.2 1.4 14.0 11.0 8.5 20.5 13.0 50 50 -3.0 80 100 -2.0 150 -0.8 1.3 GA Gain @ NFO: VDS = 3 V, IDS = 20 mA dB 13.0 P1 dB G1 dB gm IDSS VP Power Output @ 1 dB Gain Compression: VDS =5 V, IDS = 5...
Description 0.5-10 GHz General Purpose Gallium Arsenide FET

File Size 39.81K  /  3 Page

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    ATF-25735

HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
Part No. ATF-25735
OCR Text ... at 4 GHz * Low Noise Figure: 1.2 dB Typical at 4 GHz * Cost Effective Ceramic Microstrip Package microstrip package. This device is desi...5-10 GHz frequency range. This GaAs FET device has a nominal 0.3 micron gate length using airbridge ...
Description 0.5-10 GHz General Purpose Gallium Arsenide FET

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    ATF-26836 ATF-26836-STR ATF-26836-TR1

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-26836 ATF-26836-STR ATF-26836-TR1
OCR Text 2 - 16 GHz General Purpose Gallium Arsenide FET Technical Data ATF-26836 Features * High Output Power: 18.0 dBm Typical P 1 dB at 12 GH...5 V, IDS = 30 mA Optimum Noise Figure: VDS = 3 V, IDS = 10 mA Gain @ NFO: VDS = 3 V, IDS = 10 mA Pow...
Description 2-16 GHz General Purpose Gallium Arsenide FET

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    ATF-26884 ATF-26884-STR ATF-26884-TR1 ATF26884

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-26884 ATF-26884-STR ATF-26884-TR1 ATF26884
OCR Text 2 - 16 GHz General Purpose Gallium Arsenide FET Technical Data ATF-26884 Features * High Output Power: 18.0 dBm Typical P 1 dB at 12 GH...5 V, IDS = 30 mA Optimum Noise Figure: VDS = 3 V, IDS = 10 mA Gain @ NFO: VDS = 3 V, IDS = 10 mA Pow...
Description 2-16 GHz General Purpose Gallium Arsenide FET

File Size 39.76K  /  4 Page

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    ATF-34143 ATF-34143-BLK ATF-34143-TR1 ATF-34143-TR2 DEMO-ATF3X14-33

ETC
HP[Agilent(Hewlett-Packard)]
Part No. ATF-34143 ATF-34143-BLK ATF-34143-TR1 ATF-34143-TR2 DEMO-ATF3X14-33
OCR Text ...Ultra Low Noise Applications 2 ATF-34143 Absolute Maximum Ratings[1] Symbol VDS VGS VGD ID Pdiss Pin max TCH TSTG jc Parameter Drain ...5] Units V V V mA mW dBm C C C/W Absolute Maximum 5.5 -5 -5 Idss [3] 725 17 160 -65 to 160 165 Note...
Description 评估板,亚欧信托基金X14300兆赫930-1990兆赫频率
Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package

File Size 111.58K  /  15 Page

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    ATF-36077 ATF-36077-STR ATF-36077-TRL ATF36077 ATF-36077-TR1

HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
Part No. ATF-36077 ATF-36077-STR ATF-36077-TRL ATF36077 ATF-36077-TR1
OCR Text 2-18 GHz Ultra Low Noise Pseudomorphic HEMT Technical Data ATF-36077 Features * PHEMT Technology * Ultra-Low Noise Figure: 0.5 dB Typical at 12 GHz 0.3 dB Typical at 4 GHz * High Associated Gain: 12 dB Typical at 12 GHz 17 dB Typical a...
Description 1.5-18GHz surface mount pseudomorphic HEMT
2-18 GHz Ultra Low Noise Pseudomorphic HEMT

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    ATF-36163 ATF-36163-BLK ATF-36163-TR1

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-36163 ATF-36163-BLK ATF-36163-TR1
OCR Text ...As PHEMT device has a nominal 0.2 micron gate length with a total gate periphery (width) of 200 microns. Proven gold-based metallization sys...5-79 5965-4747E ATF-36163 Absolute Maximum Ratings[1] Symbol VDS VGS VGD ID PT Pin max TCH TS...
Description 1.5-18 GHz Surface Mount Pseudomorphic HEMT

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    ATF-44101

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-44101
OCR Text 2 - 8 GHz Medium Power Gallium Arsenide FET Technical Data ATF-44101 Features * High Output Power: 32.0 dBm Typical P 1 dB at 4 GHz * High Gain at 1 dB Compression: 8.5 dB Typical G 1 dB at 4 GHz * High Power Efficiency: 35% Typical at...
Description 2-8 GHz Medium Power Gallium Arsenide FET

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    ATF-45101

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-45101
OCR Text 2 - 8 GHz Medium Power Gallium Arsenide FET Technical Data ATF-45101 Features * High Output Power: 29.0 dBm Typical P 1 dB at 4 GHz * H...5 micron gate length GaAs FET is an interdigitated four-cell structure using airbridge interconnects...
Description 2-8 GHz Medium Power Gallium Arsenide FET

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For 2.5-ghz Found Datasheets File :: 27147    Search Time::3.031ms    
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