...
1:EMITTER
2:COLLECTOR
3:BASE
ABSOLUTE MAXIMUM RATINGS ( Ta=25C ,unless otherwise specified )
PARAMETER
Collector-Base Voltage...8
b
lim
0.8
ite d
io at ip ss Di
-IB=4mA -IB=3mA
0.4
50
4
n lim
-IB=2...
Description
MEDIUM POWER LOW VOLTAGE TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR
...
s Features
q q q
2.8 -0.3 0.650.15
+0.2
+0.25 1.5 -0.05
0.650.15
2
1.1 -0.1
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collecto...
...5 2.50.1 1.0
1.0 2.40.2 2.00.2 3.50.1
Unit: mm
s Features
q q q
1.5 R0.9 R0.9
0.85
s Absolute Maximum Ratings
Parameter Co...8 -1.2 -1.6 -2.0
-1
-3
-10
-30
-100
Ambient temperature Ta (C)
Base to emitter ...
Description
Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)
...1 1. Base 2. Collector (Flange) 3. Emitter
1
23
2 k (Typ)
200 (Typ) 3
Absolute Maximum Ratings (Ta = 25C)
Item Collector to...8 -12 40 150 -55 to +150
Unit V V V A A W C C
2SB791(K)
Electrical Characteristics (Ta = 25C)...
...Complementary to 2SD814
2.8 -0.3
+0.2
Unit: mm
s Features
q q q
0.650.15
+0.25 1.5 -0.05
0.650.15
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SB792 2SB792A 2SB792 Symbol VCBO VCEO VEBO ...
Description
Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)