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ST Microelectronics
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Part No. |
STB100NF04T4
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OCR Text |
...x (2) starting t j = 25c, i d = 60a, v dd =30 v typical r ds (on) = 0.0043 ? standard threshold drive 100% avalanche tested description this power mosfet is the latest development of stmicroelectronics unique ?single feature size ?? s... |
Description |
N-CHANNEL 40v - 0.0043OHM - 120A TO-220/I2PAK/I2PAK STRIPFET II POWER MOSFET
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File Size |
99.49K /
8 Page |
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STMICROELECTRONICS[STMicroelectronics] STMicroelectronics N.V.
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Part No. |
STB185N55 STP185N55 B185N55 P185N55
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OCR Text |
...ng area. 3. Starting Tj=25C, Id=60a, Vdd=40v
Table 2.
Thermal data
TO-220 DPAK 0.48 62.5 -300 -35 -Unit C/W C/W C/W C
Rthj-case Rthj-a Rthj-pcb(1) Tl
Thermal resistance junction-case Thermal resistance junction-ambient max Ther... |
Description |
120 A, 55 V, 0.0035 ohm, N-CHANNEL, Si, POWER, MOSFET N-channel 55V - 2.9mohm - 120A - D2PAK/TO-220 N沟道55V 2.9mohm - 120A D2PAK/TO-220
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File Size |
205.49K /
12 Page |
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Infineon Technologies A...
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Part No. |
IGB30N60T
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OCR Text |
...10s
IC, COLLECTOR CURRENT
60a 50A 40A 30A 20A 10A 0A 100H z
T C =80C T C =110C
IC, COLLECTOR CURRENT
70A
10A 50s
1A DC
...40v
QGE, GATE CHARGE Figure 17. Typical gate charge (IC=30 A)
VCE, COLLECTOR-EMITTER VOLTAGE F... |
Description |
Low Loss IGBT in TrenchStop and Fieldstop technology
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File Size |
354.83K /
12 Page |
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Infineon Technologies A...
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Part No. |
IHW30N60T
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OCR Text |
...
IC, COLLECTOR CURRENT
70A 60a 50A 40A 30A 20A 10A 0A 100Hz 1kHz 10kHz 100kHz TC=80C TC=110C
10A 50s
Ic
1A DC
1ms 10ms
0...40v
QGE, GATE CHARGE Figure 17. Typical gate charge (IC=30 A)
VCE, COLLECTOR-EMITTER VOLTAGE F... |
Description |
Low Loss DuoPack : IGBT in TrenchStop technology with optimised diode
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File Size |
365.19K /
12 Page |
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INFINEON
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Part No. |
IHW40N60T
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OCR Text |
..., COLLECTOR CURRENT
100A 80A 60a 40A 20A 0A 10Hz TC=80C TC=110C
IC, COLLECTOR CURRENT
2s
10A
10s 50s
Ic
1A
DC
1ms...40v
QGE, GATE CHARGE Figure 17. Typical gate charge (IC=40 A)
VCE, COLLECTOR-EMITTER VOLTAGE F... |
Description |
Low Loss DuoPack : IGBT in TrenchStop -technology with anti-parallel diode
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File Size |
381.86K /
12 Page |
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ST Microelectronics
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Part No. |
STP185N55
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OCR Text |
... as (3) 3. starting tj=25c, id=60a, vdd=40v single pulse avalanche energy tbd mj t j t stg operating junction temperature storage temperature -55 to 175 c table 2. thermal data to-220 d2pak unit rthj-case thermal resistance junction-case 0... |
Description |
N-CHANNEL Power MOSFET
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File Size |
233.30K /
12 Page |
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ST Microelectronics
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Part No. |
STB60NE06L-16 STB60NE06L-16T4
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OCR Text |
60a d 2 pak stripfet? ii power mosfet n typical r ds (on) = 0.014 w n avalanche rugged technology n low gate charge n high current capabili...40v i d = 60a v gs = 5v 55 15 30 70 nc nc nc symbol parameter test conditions min. typ. max. unit t ... |
Description |
N-CHANNEL 60V - 0.014 OMH - 60a D2PAK STRIPFET II POWER MOSFET N-CHANNEL 60V - 0.014 OMH - 60a D2PAK STRIPFET II POWER MOSFET
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File Size |
344.83K /
9 Page |
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Price and Availability
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