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  8- 16-channel Datasheet PDF File

For 8- 16-channel Found Datasheets File :: 88628    Search Time::3.703ms    
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    IRF530FP 5758

SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. IRF530FP 5758
OCR Text ...rain-source On V GS = 10V I D = 8 A Resistance On State Drain Current V DS > I D(on) x R DS(on)max V GS = 10 V DYNAMIC Symbol g fs () C ...16 A =8A Min. Typ. 12 20 32 9 13 Max. 16 28 44 Unit ns ns nC nC nC V GS = 10 V SWITCHING OFF ...
Description N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
From old datasheet system

File Size 76.48K  /  5 Page

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    IRF530L IRF530NS IRF530NL

International Rectifier
Part No. IRF530L IRF530NS IRF530NL
OCR Text ... 10 seconds Max. 17 12 60 3.8 79 0.53 20 150 A 7.9 5.0 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ mJ V/ns C Therma...16 12 8 C rss 200 4 0 1 10 100 A 0 0 5 10 15 20 FO R TE S T C IR C U IT S E...
Description Power MOSFET(Vdss=100V/ Rds(on)=0.11ohm/ Id=17A)
HEXFET Power MOSFET
Power MOSFET(Vdss=100V, Rds(on)=0.11ohm, Id=17A)

File Size 174.65K  /  10 Page

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    IRF530N

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. IRF530N
OCR Text ...clamped inductive load, IAS = 7.8 A; tp = 300 s; Tj prior to avalanche = 25C; VDD 25 V; RGS = 50 ; VGS = 10 V; refer to fig:14 MIN. MAX. 15...16 14 12 10 8 6 4 2 0 0 5.4 V 5.2 V 5V 4.8 V 4.6 V 0.2 0.4 0.6 0.8 1 1.2 1.4 Drain-Source Voltage...
Description N-channel TrenchMOS transistor(N沟道 TrenchMOS 晶体
N-channel TrenchMOS TM transistor

File Size 95.87K  /  7 Page

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    IRF7106 IRF7106TR

IRF[International Rectifier]
Part No. IRF7106 IRF7106TR
OCR Text 8 HEXFET (R) Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available in Tap...16 C, Capacitance (pF) 600 C oss 12 400 Ciss 8 200 Crss 4 0 1 10 10...
Description 20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss= -20V)

File Size 157.44K  /  7 Page

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    IRF7807D1

International Rectifier
Part No. IRF7807D1
OCR Text ...lectronics applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO8 package is ...16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 Data and...
Description MOSFET / SCHOTTKY DIODE

File Size 162.75K  /  8 Page

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    IRF7807D2

International Rectifier
Part No. IRF7807D2
OCR Text ...lectronics applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO8 package is ...16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 Data and...
Description MOSFET / SCHOTTKY DIODE

File Size 131.40K  /  8 Page

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    IRF7807VD1

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF7807VD1
OCR Text ...lectronics applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO8 package is ...16.8 14 nC VDS = 16V, VGS = 0 VDD = 16V, ID = 7.0A ns VGS = 5V, RG= 2 Resistive Load Schot...
Description Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:SP06; Number of Contacts:5; Connector Shell Size:14; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight FETKY⑩MOSFET肖特基二极管
FETKY MOSFET / SCHOTTKY DIODE
FETKY⑩ MOSFET / SCHOTTKY DIODE

File Size 116.12K  /  9 Page

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    IRF7807VD2 IRF7807VD2TR

IRF[International Rectifier]
Part No. IRF7807VD2 IRF7807VD2TR
OCR Text ...lectronics applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO8 package is ...16.8 14 nC VDS = 16V, VGS = 0 VDD = 16V, ID = 7.0A ns VGS = 5V, RG= 2 Resistive Load Schot...
Description 30V FETKY - MOSFET and Schottky Diode in a SO-8 package
FETKY MOSFET / SCHOTTKY DIODE
FETKY⑩ MOSFET / SCHOTTKY DIODE

File Size 113.54K  /  9 Page

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    IRF7807V

IRF[International Rectifier]
Part No. IRF7807V
OCR Text ...ching Losses S S S G 1 8 7 A D D D D Description This new device employs advanced HEXFET Power MOSFET technology to achieve a...16.8 14 nC VDS = 16V, VGS = 0 VDD = 16V, ID = 7.0A ns VGS = 5V, RG= 2 Resistive Load Sourc...
Description N Channel Application Specific MOSFET

File Size 126.34K  /  8 Page

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    IRF7807 IRF7807A IRF7807ATR IRF7807TR

IRF[International Rectifier]
Part No. IRF7807 IRF7807A IRF7807ATR IRF7807TR
OCR Text ...ow Switching Losses S S S G 1 8 7 A D D D D 2 3 6 Description These new devices employ advanced HEXFET Power MOSFET technol...16.8nC 16.8nC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continu...
Description 8.3 A, 30 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET
Chip-Set for DC-DC Converters
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package

File Size 238.61K  /  8 Page

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For 8- 16-channel Found Datasheets File :: 88628    Search Time::3.703ms    
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