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TCL200 1725E 00K1T 06IE1 1N60P UPD72067 SXX18 MC12181D
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For curent Found Datasheets File :: 2419    Search Time::1.468ms    
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    IRLMS1902 IRLMS1902TR

International Rectifier
Part No. IRLMS1902 IRLMS1902TR
OCR Text ... Re-Applied Voltage Inductor curent Body Diode Forward Drop Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 12. For N-channel HEXFET(R) power MOSFETs 6 www.irf.com IRLMS1902 Package Outline Micro6a 3.00 (...
Description 20V Single N-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package

File Size 183.10K  /  8 Page

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    M-88L70 M-88L70-01P M-88L70-01S M-88L70-01T

Clare Inc
CLARE[Clare, Inc.]
Part No. M-88L70 M-88L70-01P M-88L70-01S M-88L70-01T
OCR Text ... current on OE Pull down (sink) curent PD Pull down (sink) Current INH Input impedance, signal inputs 1, 2 Steering threshold voltage Low level output voltage High level output voltage Output high (source) current Output voltage VREF Output...
Description 3V DTMF Receiver

File Size 289.07K  /  8 Page

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    MB40178 MB40168

Fujitsu Microelectronics
FUJITSU[Fujitsu Media Devices Limited]
Part No. MB40178 MB40168
OCR Text ... high current Digital input low curent Symbol VOHD VOLD VIHD VILD IIHD IILD Condition IOH = -400 A IOL = 1.6 mA -- -- VIHD = 2.7 V VILD = 0.4 V Value Min. 2.7 -- 2.0 -- -- -100 Typ. -- -- -- -- -- -- Max. -- 0.4 -- 0.8 20 -- Unit V V V V A ...
Description Single Chip 8-Bit A/D and 9-Bit D/A Converter

File Size 589.68K  /  21 Page

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    MB509

Fujitsu Microelectronics
Fujitsu Media Devices Limited
Fujitsu Limited
Part No. MB509
OCR Text ...ion Min. -- -- 1.0 Power Supply curent Typ. 11.6 180 1.6 Max. -- -- -- mA A Vp-p Unit Input Frequency Input Signal Amplitude High Level Input Voltage for MC Low Level Input Voltage for MC High Level Input Voltage for SW Low Level Input V...
Description TWO MODULUS PRESCALER WITH STAND-BY MODE

File Size 103.29K  /  9 Page

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    IRFRU4105 IRFU4105 IRFR4105

IRF[International Rectifier]
Part No. IRFRU4105 IRFU4105 IRFR4105
OCR Text ... Re-Applied Voltage Inductor curent Body Diode Forward Drop Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS www.irf.com 7 IRFR/U4105 Package Outline TO-252AA Outline Dimensions are...
Description Power MOSFET(Vdss=55V / Rds(on)=0.045ohm / Id=27A)
Power MOSFET(Vdss=55V, Rds(on)=0.045ohm, Id=27A?)
HEXFET? Power MOSFET
Power MOSFET(Vdss=55V, Rds(on)=0.045ohm, Id=27A)
Power MOSFET(Vdss=55V, Rds(on)=0.045ohm, Id=27A?

File Size 140.69K  /  10 Page

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    SMDA15C-8 SMDA12C-8 SMDA05C-8 SMDA24C-8

GE Security, Inc.
GE[General Semiconductor]
Part No. SMDA15C-8 SMDA12C-8 SMDA05C-8 SMDA24C-8
OCR Text ...DERATING IN OF OF PEAK PULSE OR curent, % FIG. 2 - PULSE DERATING CURVE 10 PPPM, PEAK PULSE POWER, kW WAVEFORM - SEE FIG. 3 NON-REPETITIVE 100 75 50 25 0 1 0.1 0.01 100ns 1s 10s 100s 1ms 10ms 0 25 ...
Description Surface Mount Diode Array Transient Voltage Supperssor(琛ㄨ创???????靛?????靛??????
SURFACE MOUNT DIODE ARRAY TRANSIENT VOLTAGE SUPPRESSOR

File Size 39.71K  /  2 Page

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    TC4431 TC4431CPA TC4431EOA TC4431EPA TC4432EOA TC4432EPA TC4431EJA TC4432COA TC4431COA TC4432 TC4432CPA TC4432EJA

TelCom Semiconductor, Inc.
TELCOM[TelCom Semiconductor Inc]
TELCOM[TelCom Semiconductor, Inc]
Part No. TC4431 TC4431CPA TC4431EOA TC4431EPA TC4432EOA TC4432EPA TC4431EJA TC4432COA TC4431COA TC4432 TC4432CPA TC4432EJA
OCR Text ... Input Voltage 50 45 40 Input curent (mA) 300 250 TD1 200 150 TD2 TD1 and TD2 Delay vs. VDD CLOAD = 1000pf at 25 C 35 30 25 20 15 10 5 0 3 6 9 12 15 18 21 Input Voltage (VIN) 24 27 30 WITH 1K RES. WITHOUT 1K RES. Time (nsec) ...
Description 1.5A HIGH-SPEED 30V MOSFET DRIVERS 1.5A的高0V的MOSFET驱动

File Size 56.63K  /  4 Page

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    IRF630N IRF630NL IRF630NS

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF630N IRF630NL IRF630NS
OCR Text ... Re-Applied Voltage Inductor curent Body Diode Forward Drop Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET(R) Power MOSFETs www.irf.com 7 IRF630N/S/L TO-220AB Package Outline Dime...
Description Power MOSFET(Vdss=200V, Rds(on)=0.30ohm, Id=9.3A) 功率MOSFET(减振钢板基本\u003d 200V的电压,的Rds(on)\u003d 0.30ohm,身份证\u003d 9.3A
Power MOSFET(Vdss=200V/ Rds(on)=0.30ohm/ Id=9.3A)
Power MOSFET(Vdss=200V Rds(on)=0.30ohm Id=9.3A)

File Size 152.79K  /  11 Page

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    IRF7601 IRF7601TR

International Rectifier, Corp.
Part No. IRF7601 IRF7601TR
OCR Text ... Re-Applied Voltage Inductor curent Body Diode Forward Drop Ripple 5% ISD * V GS = 5V for Logic Level Devices Fig 12. For N-Channel HEXFETS IRF7601 Package Outline Micro8 Outline Dimensions are shown in millimeters (...
Description 20V Single N-Channel HEXFET Power MOSFET in a Micro 8 package
Power MOSFET(Vdss=20V, Rds(on)=0.035ohm)
Power MOSFET(Vdss=20V/ Rds(on)=0.035ohm)
N-Channel HEXFET Power MOSFET(N沟道 HEXFET 功率MOS场效应管) N沟道HEXFET功率MOSFET的(不适用沟道的HEXFET功率马鞍山场效应管)
N-Channel HEXFET Power MOSFET(N娌?? HEXFET ???MOS?烘?搴??)

File Size 110.37K  /  8 Page

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    IRF7603

International Rectifier
Part No. IRF7603
OCR Text ... Re-Applied Voltage Inductor curent Body Diode Forward Drop Ripple 5% ISD * V GS = 5V for Logic Level Devices Fig 12. For N-Channel HEXFETS IRF7603 Package Outline Micro8 Outline Dimensions are shown in millimeters (...
Description 30V Single N-Channel HEXFET Power MOSFET in a Micro 8 package
Power MOSFET(Vdss=30V, Rds(on)=0.035ohm)

File Size 107.39K  /  8 Page

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