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  d-mos Datasheet PDF File

For d-mos Found Datasheets File :: 19740    Search Time::1.5ms    
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    2SJ554

HITACHI[Hitachi Semiconductor]
Part No. 2SJ554
OCR Text ...switching. Outline TO-3P D G 1 S 2 3 2SJ554 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings -...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 53.62K  /  9 Page

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    2SJ555

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SJ555
OCR Text ...switching. Outline TO-3P D G 1 S 2 3 1. Gate 2. Drain (Flange) 3. Source 2SJ555 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 52.90K  /  9 Page

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    2SJ557 2SJ557-T2B 2SJ557-T1B

NEC[NEC]
Part No. 2SJ557 2SJ557-T2B 2SJ557-T1B
OCR Text DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ557 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The 2SJ557 is a switching device which can be driven directly by a 4 V power source. The 2SJ557 features a low on-state...
Description Pch enhancement type MOS FET
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

File Size 60.99K  /  8 Page

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    2SJ559 2SJ559-T1

NEC[NEC]
Part No. 2SJ559 2SJ559-T1
OCR Text DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ559 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The 2SJ559 is a switching device which can be driven directly by a 2.5 V power source. The 2SJ559 has excell...
Description Pch enhancement type MOS FET
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

File Size 48.29K  /  8 Page

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    2SJ574

HITACHI[Hitachi Semiconductor]
Part No. 2SJ574
OCR Text ...DS = 1.1 typ. (VGS = -10 V , I D = -150 mA) R DS = 2.2 typ. (VGS = -4 V , I D = -150 mA) * 4 V gate drive device. * Small package (MPAK) Outline MPAK 3 1 D 3 2 2 G 1. Source 2. Gate 3. Drain S 1 2SJ574 Absolute Maxim...
Description Silicon P Channel MOS FET High Speed Switching

File Size 38.90K  /  8 Page

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    2SJ575

Hitachi Semiconductor
Part No. 2SJ575
OCR Text ...DS =2.8 typ. (V GS = -10 V , I D = -50 mA) R DS =5.7 typ. (V GS = -4 V , ID = -50 mA) * 4 V gate drive device. * Small package (MPAK) Outline MPAK 3 1 D 3 2 2 G 1. Source 2. Gate 3. Drain S 1 2SJ575 Absolute Maximum ...
Description Silicon P Channel MOS FET High Speed Switching

File Size 38.55K  /  8 Page

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    2SJ576

http://
HITACHI[Hitachi Semiconductor]
Part No. 2SJ576
OCR Text ...DS =2.8 typ. (V GS = -10 V , I D = -50 mA) R DS =5.7 typ. (V GS = -4 V , ID = -50 mA) * 4 V gate drive device. * Small package (CMPAK) Outline CMPAK 3 1 2 D 3 2 G 1. Source 2. Gate 3. Drain S 1 2SJ576 Absolute Maximum...
Description Silicon P Channel MOS FET High Speed Switching

File Size 26.18K  /  5 Page

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    2SJ586

HITACHI[Hitachi Semiconductor]
Part No. 2SJ586
OCR Text ... DS = 4.1 typ. (VGS = -4 V , I D = -50 mA) R DS = 6.0 typ. (VGS = -2.5 V , ID = -50 mA) * 2.5 V gate drive device. * Small package (CMPAK) Outline CMPAK 3 1 2 D 3 2 G 1. Source 2. Gate 3. Drain S 1 2SJ586 Absolute Max...
Description Silicon P Channel MOS FET High Speed Switching

File Size 40.34K  /  8 Page

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    2SJ587

HITACHI[Hitachi Semiconductor]
Part No. 2SJ587
OCR Text ... DS = 8.5 typ. (VGS = -4 V , I D = -25 mA) R DS = 15 typ. (VGS = -2.5 V , ID = -10 mA) * 2.5 V gate drive device. * Small package (SMPAK) Outline SMPAK 3 1 2 D 3 2 G 1. Source 2. Gate 3. Drain S 1 2SJ587 Absolute Maximum ...
Description Silicon P Channel MOS FET High Speed Switching

File Size 38.71K  /  8 Page

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    2SJ588

HITACHI[Hitachi Semiconductor]
Part No. 2SJ588
OCR Text ...DS =2.8 typ. (V GS = -10 V , I D = -50 mA) R DS =5.7 typ. (V GS = -4 V , I D = -50 mA) * 4 V gate drive device. Outline SPAK D 3 12 3 2 G 1. Source 2. Drain 3. Gate S 1 2SJ588 Absolute Maximum Ratings (Ta = 25C) Item...
Description Silicon P Channel MOS FET High Speed Switching

File Size 25.19K  /  5 Page

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For d-mos Found Datasheets File :: 19740    Search Time::1.5ms    
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