65536 bit static random access memory organized as 8192 words by 8 bits using CMOS technology 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology
Hermetically Sealed High Precision Bulk Metal㈢ Foil technology Resistors with TCR of 【 2 ppm/∑C, Tolerance of 【 0.001 % and Hermetically Sealed High Precision Bulk Metal? Foil technology Resistors with TCR of ± 2 ppm/°C, Tolerance of ± 0.001 % and Hermetically Sealed High Precision Bulk Metal庐 Foil technology Resistors with TCR of 卤 2 ppm/掳C, Tolerance of 卤 0.001 % and Hermetically Sealed High Precision Bulk Metal垄莽 Foil technology Resistors with TCR of 隆戮 2 ppm/隆?C, Tolerance of 隆戮 0.001 % and Hermetically Sealed High Precision Bulk Metal? Foil technology Resistors with TCR of ± 2 ppm/°C, Tolerance of ± 0.001 % and