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  mos Datasheet PDF File

For mos Found Datasheets File :: 26975    Search Time::1.438ms    
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    2SK0655 2SK655

PANASONIC[Panasonic Semiconductor]
Part No. 2SK0655 2SK655
OCR Text mos FETs (Small Signal) 2SK0655 (2SK655) Silicon N-Channel mos FET unit: mm For switching I Features 0.75 max. 4.00.2 (0.8) 3.00.2 2.00.2 I Absolute Maximum Ratings (Ta = 25C) Parameter Drain to Source voltage Gate to Sou...
Description For Switching

File Size 71.61K  /  3 Page

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    2SK3402-Z 2SK3402

NEC[NEC]
Part No. 2SK3402-Z 2SK3402
OCR Text mos FIELD EFFECT TRANSISTOR 2SK3402 SWITCHING N-CHANNEL POWER mos FET DESCRIPTION The 2SK3402 is N-Channel mos Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 2SK340...
Description Nch power mos FET
SWITCHING N-CHANNEL POWER mosFET

File Size 127.51K  /  8 Page

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    APT30M85BVR APT30M85

ADPOW[Advanced Power Technology]
Part No. APT30M85BVR APT30M85
OCR Text mos V (R) Power mos V(R) is a new generation of high voltage N-Channel enhancement mode power mosFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power mos V(R) also achieves fas...
Description POWER mos V 300V 40A 0.085 Ohm
Power mos V is a new generation of high voltage N-Channel enhancement mode power mosFETs.

File Size 64.67K  /  4 Page

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    APT30M85 APT30M85BVFR

Advanced Power Technology, Ltd.
Part No. APT30M85 APT30M85BVFR
OCR Text mos V (R) FREDFET TO-247 Power mos V(R) is a new generation of high voltage N-Channel enhancement mode power mosFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power mos V...
Description Power mos V is a new generation of high voltage N-Channel enhancement mode power mosFETs. 电源mos V是一个高电压N新一代通道增强型功率mosFET
POWER mos V 300V 40A 0.085 Ohm

File Size 69.32K  /  4 Page

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    BSP92

NXP Semiconductors
Philips Semiconductors
Part No. BSP92
OCR Text mos transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification P-channel enhancement mode vertical D-mos transistor FEATURES * Low threshold voltage VGS(th) ...
Description P-channel enhancement mode vertical D-mos transistor

File Size 48.25K  /  8 Page

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    RD09MUP2

Mitsubishi Electric Semiconductor
Part No. RD09MUP2
OCR Text mos FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD09MUP2 (a) 0.2+/-0.05 8.0+/-0.2 0.65+/-0.2 (c) (b) (b) 7.0+/-0.2 6.2+/-0.2 5.6+/-0.2 4.2+/-0.2 RoHS Compliance, Silicon mosFET Power Transistor, 520MHz, 8W DESCR...
Description Silicon mosFET Power Transistor, 520MHz, 8W

File Size 148.99K  /  7 Page

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    UPA1706TP

NEC
Part No. UPA1706TP
OCR Text mos FIELD EFFECT TRANSISTOR PA1706TP SWITCHING N-CHANNEL POWER mos FET DESCRIPTION The PA1706TP which has a heat spreader is N-Channel mos Field Effect Transistor designed for DC/DC converter and power management application of n...
Description SWITCHING N-CHANNEL POWER mosFET

File Size 65.79K  /  8 Page

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    2SJ243 D11215EJ1V0DS00

NEC Corp.
Part No. 2SJ243 D11215EJ1V0DS00
OCR Text mos FIELD EFFECT TRANSISTOR 2SJ243 P-CHANNEL mos FET FOR SWITCHING The 2SJ243 is a P-channel vertical type mos FET that is driven at 2.5 V. Because this mos FET can be driven on a low voltage and because it is not necessary to consid...
Description From old datasheet system
P-CHANNEL mos FET FOR SWITCHING

File Size 58.34K  /  6 Page

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    APT50M85JVR

Advanced Power Technology
Part No. APT50M85JVR
OCR Text mos V (R) Power mos V(R) is a new generation of high voltage N-Channel enhancement mode power mosFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power mos V(R) also achieves fas...
Description POWER mos IV 500V 50A 0.085 Ohm
Power mos V is a new generation of high voltage N-Channel enhancement mode power mosFETs.

File Size 74.15K  /  4 Page

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For mos Found Datasheets File :: 26975    Search Time::1.438ms    
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