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STMicroelectronics N.V. ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
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Part No. |
STE50DE100
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OCR Text |
...onditions VClamp = 800 V tp = 4 ms (see figure 15) VClamp = 800 V tp = 4 ms IB = 2.5 A (see figure 15) 1000 5.5 0.43 6 ms ns V V 0.65 10 ms ns Min. Typ. Max. Unit
Maximum Collector-Source RG = 47 W hFE = 5 A IC = 35 A Voltage without Snu... |
Description |
HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT 1000 V - 50 A - 0.026 W POWER MODULE 混合发射器开关双极晶体管内酰胺酶1000 50 0.026 W电源模块 From old datasheet system HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT" 1000 V - 50 A - 0.026 Ohm POWER MODULE
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File Size |
265.95K /
9 Page |
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Download Datasheet |
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ONSEMI[ON Semiconductor]
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Part No. |
NTHD4P02F05 NTHD4P02FT1G NTHD4P02F NTHD4P02FT1
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OCR Text |
...T CASE 1206A STYLE 3
tp = 10 ms Steady State tv5s TJ = 25C TJ = 85C TJ = 25C
PIN CONNECTIONS
1 8
MARKING DIAGRAM
1 2 3 4 C3 M G 8...026
SCALE 20:1 mm inches
0.66 0.026
0.254 0.010
SCALE 20:1 mm inches
Figure 18. Basic
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Description |
Power MOSFET and Schottky Diode
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File Size |
80.25K /
7 Page |
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it Online |
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ONSEMI[ON Semiconductor]
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Part No. |
NTHS4101P07 NTHS4101PT1G NTHS4101P NTHS4101PT1
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OCR Text |
... Pulsed Drain Current - tp = 10 ms Continuous Source Current Thermal Resistance (Note 1) Junction-to-Ambient, 5 sec Junction-to-Ambient, Con...026
2X 2X mm inches
0.457 0.018
0.66 0.026
mm inches
Basic
*For additional informati... |
Description |
Power MOSFET -20 V, 6.7 A, P-Channel ChipFET-TM 4.8 A, 20 V, 0.034 ohm, P-CHANNEL, Si, POWER, MOSFET
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File Size |
55.81K /
6 Page |
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it Online |
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ONSEMI[ON Semiconductor]
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Part No. |
NSS35200CF8T1G_06 NSS35200CF8T1G NSS35200CF8T1G06
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OCR Text |
....00 Thermal Limits 0.10 10 1s 1 ms 10 ms 100 ms
VCB, COLLECTOR BASE VOLTAGE (V)
Figure 7. Output Capacitance
Figure 8. Safe Operati...026
SCALE 20:1 mm inches
0.178 0.007 0.711 0.028 0.66 0.026
SCALE 20:1 mm inches
Basic
St... |
Description |
35 V, 7 A, Low VCE(sat) PNP Transistor
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File Size |
63.32K /
6 Page |
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it Online |
Download Datasheet |
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Price and Availability
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