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  1-1l1a Datasheet PDF File

For 1-1l1a Found Datasheets File :: 39    Search Time::1.515ms    
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    DF2S6.2FS

Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
Part No. DF2S6.2FS
OCR Text ...pace. CATHODE MARK A 0.1 Characteristic Power dissipation Junction temperature Storage temperature range Symbol P* Tj Tstg ...1L1A absolute maximum ratings. Please design the appropriate reliability upon reviewing the Weight: ...
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 11.10 to 11.56; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): &#160; ESD (kV) min: -; Package: URP 产品使用,但对静电放电(ESD)保护
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 11.10 to 11.56; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).

File Size 109.90K  /  3 Page

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    DF2S6.8FS

Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
Part No. DF2S6.8FS
OCR Text ...pace. CATHODE MARK A 0.1 Characteristic Power dissipation Junction temperature Storage temperature range Symbol P Tj Tstg ...1L1A absolute maximum ratings. Please design the appropriate reliability upon reviewing the Weight: ...
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 11.42 to 12.60; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): &#160; ESD (kV) min: -; Package: URP 产品使用,但对静电放电(ESD)保护
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 11.42 to 12.60; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).

File Size 110.60K  /  3 Page

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    DF2S8.2FS

Toshiba Corporation
Toshiba Semiconductor
Part No. DF2S8.2FS
OCR Text ...pace. CATHODE MARK A 0.1 Characteristic Power dissipation Junction temperature Storage temperature range Symbol P Tj Tstg ...1L1A absolute maximum ratings. Please design the appropriate reliability upon reviewing the Weight: ...
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 11.74 to 12.24; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).

File Size 110.55K  /  3 Page

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    JDH2S01FS

Toshiba Semiconductor
Part No. JDH2S01FS
OCR Text ...h-density mounting 0.60.05 0.1 0.80.05 A Characteristic Maximum (peak) reverse voltage Forward current Junction temperature Storage...1L1A Weight: 0.0006 g (typ.) Electrical Characteristics (Ta = 25C) Characteristic Forward vol...
Description UHF Band Mixer

File Size 120.84K  /  4 Page

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    JDH2S02FS

Toshiba Semiconductor
Part No. JDH2S02FS
OCR Text ...ty mounting Unit: mm 0.60.05 0.1 0.80.05 A Characteristic Maximum (peak) reverse voltage Forward current Junction temperature Storage...1L1A Weight: 0.0006 g (typ.) Electrical Characteristics (Ta = 25C) Characteristic Forward vol...
Description UHF Band Mixer

File Size 154.87K  /  4 Page

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    JDP2S02AFS07 JDP2S02AFS

Toshiba Semiconductor
Part No. JDP2S02AFS07 JDP2S02AFS
OCR Text ...es. Low series resistance: rs = 1.0 (typ.) 0.80.05 1.00.05 0.10.05 0.1 0.48 +0.02 -0.03 0.60.05 0.1 0.07 M A Low capacitance: CT = ...1L1A Electrical Characteristics (Ta = 25C) Characteristics Reverse voltage Reverse current Forwa...
Description UHF~VHF Band RF Switch Applications

File Size 126.00K  /  3 Page

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    JDP2S05FS

Toshiba Semiconductor
Part No. JDP2S05FS
OCR Text ... MARK Unit:mm 0.60.05 A 0.1 0.80.05 Low series resistance: rs = 1.5 (typ.) Low capacitance: CT = 0.32 pF (typ.) Absolute Maximu...1L1A TOSHIBA Weight: 0.0006 g(Typ.) Electrical Characteristics (Ta = 25C) Characteristics Revers...
Description UHF~VHF Band RF Switch Applications

File Size 95.58K  /  4 Page

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    JDV2S02FS

Toshiba Semiconductor
Part No. JDV2S02FS
OCR Text ...ner. Unit: mm 0.60.05 0.1 0.80.05 A Absolute Maximum Ratings (Ta = 25C) Characteristic Reverse voltage Junction temperature S...1L1A Weight: 0.0011 g (typ.) Electrical Characteristics (Ta = 25C) Characteristic Reverse vol...
Description VCO for the UHF band

File Size 100.90K  /  2 Page

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    JDV2S05FS

Toshiba Semiconductor
Part No. JDV2S05FS
OCR Text ...gh capacitance ratio: C1V/C4V = 1.9 (typ.) Low series resistance: rs = 0.3 (typ.) This device is suitable for use in a small-size tuner. ...1L1A Weight: 0.0006 g (typ.) Electrical Characteristics (Ta = 25C) Characteristic Reverse vol...
Description Silicon Epitaxial Planar Type VCO for the UHF band

File Size 106.80K  /  3 Page

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    JDV2S08FS

Toshiba Semiconductor
Part No. JDV2S08FS
OCR Text ...ner. Unit: mm 0.60.05 0.1 0.80.05 A Absolute Maximum Ratings (Ta = 25C) Characteristic Reverse voltage Junction temperature S...1L1A Weight: 0.0006 g (typ.) Electrical Characteristics (Ta = 25C) Characteristic Reverse vol...
Description VCO for the UHF band

File Size 110.19K  /  3 Page

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