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  256m-bit Datasheet PDF File

For 256m-bit Found Datasheets File :: 676    Search Time::1.688ms    
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    HM5225325F-B60 HM5225645F HM5225645F-B60

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HITACHI[Hitachi Semiconductor]
Hitachi,Ltd.
Part No. HM5225325F-B60 HM5225645F HM5225645F-B60
OCR Text 256M LVTTL interface SDRAM 100 MHz 1-Mword x 64-bit x 4-bank/2-Mword x 32-bit x 4-bank PC/100 SDRAM ADE-203-1014C (Z) Rev. 1.0 Oct. 1, 1999 Description The Hitachi HM5225645F is a 256-Mbit SDRAM organized as 1048576-word x 64-bit x 4...
Description 256M LVTTL interface SDRAM 100 MHz 1-Mword x 64-bit x 4-bank/2-Mword x 32-bit x 4-bank PC/100 SDRAM

File Size 76.58K  /  16 Page

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    HN29W25611T HN29W25611T-50H

HITACHI[Hitachi Semiconductor]
Part No. HN29W25611T HN29W25611T-50H
OCR Text 256M AND type Flash Memory More than 16,057-sector (271,299,072-bit) ADE-203-1178A (Z) Rev. 1.0 May. 10, 2000 Description The Hitachi HN29W25611T is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic prog...
Description 256M AND type Flash Memory More than 16,057-sector (271,299,072-bit)

File Size 328.55K  /  42 Page

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    HN29W25611 HN29W25611T-50

HITACHI[Hitachi Semiconductor]
Part No. HN29W25611 HN29W25611T-50
OCR Text 256M AND type Flash Memory More than 16,057-sector (271,299,072-bit) ADE-203-995B (Z) Rev. 1.0 Dec. 10, 1999 Description The Hitachi HN29W25611 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic...
Description 256M AND type Flash Memory More than 16,057-sector (271,299,072-bit)

File Size 341.81K  /  43 Page

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    VG37648041AT

VML[Vanguard International Semiconductor]
Part No. VG37648041AT
OCR Text 256M:x4, x8, x16 CMOS Synchronous Dynamic RAM The 256Mb DDR SDRAM is a high-speed COMS, dynamic random-access memory containing 268,435,4...bit wide, one clock cycle data transfer at the internal DRAM core and two corresponding n-bit wide, ...
Description 256M:x4, x8, x16 CMOS Synchronous Dynamic RAM

File Size 963.00K  /  86 Page

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    TH58NVG1S3AFT TH58NVG1S3AFT05

TOSHIBA[Toshiba Semiconductor]
Part No. TH58NVG1S3AFT TH58NVG1S3AFT05
OCR Text 256M DESCRIPTION 8BITS) CMOS NAND E2PROM The TH58NVG1S3A is a single 3.3-V 2G-bit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048+64) bytes x 64 pages x 2048 blocks. T...
Description Flash - NAND
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

File Size 364.12K  /  32 Page

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    K4D551638F-TC33 K4D551638F-TC50 K4D551638F-TC36 K4D551638F K4D551638F-TC K4D551638F-TC60 K4D551638F-TC40

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Samsung Semiconductor Co., Ltd.
Part No. K4D551638F-TC33 K4D551638F-TC50 K4D551638F-TC36 K4D551638F K4D551638F-TC K4D551638F-TC60 K4D551638F-TC40
OCR Text 256M GDDR SDRAM 256Mbit GDDR SDRAM 4M x 16Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM Revision 1.7 June 2004 Samsung E...bit prefetch Sense AMP Refresh Counter Row Buffer Row Decoder 4Mx16 4Mx16 4Mx16 32 16 x16 DQi...
Description 256Mbit GDDR SDRAM 56Mbit GDDR SDRAM内存

File Size 204.60K  /  16 Page

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    K9W4G08U1M K9K2G16U0M K9W4G16U1M K9K2G08Q0M K9K2G08U0M K9K2G16Q0M K9K2G08Q0M-P

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9W4G08U1M K9K2G16U0M K9W4G16U1M K9K2G08Q0M K9K2G08U0M K9K2G16Q0M K9K2G08Q0M-P
OCR Text 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 History 1. Initial issue 1. IOL(R/B) of 1.8V device is changed. -min. Value: 7mA -->3mA -typ. Value: 8mA -->4mA Draft Date Aug. 30.2001 Nov. 5. 20...
Description 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory

File Size 637.45K  /  40 Page

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    K9W8G08U1M K9K4G16U0M K9K4G08U0M K9K4G08Q0M K9K4G16Q0M

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9W8G08U1M K9K4G16U0M K9K4G08U0M K9K4G08Q0M K9K4G16Q0M
OCR Text 256M x 16 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 0.2 History 1. Initial issue 1. Add two-K9K4GXXU0M-YCB0/YIB0 Stacked Package 1. The 3rd Byte ID after 90h ID read command is don' cared. t The 5th Byte ID after 90h...
Description 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory

File Size 597.69K  /  38 Page

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    M312L2920BG0 M312L2920BG0-A2 M312L2920BG0-B0 M312L2920BG0-CB3 M312L2923BG0-A2 M312L2923BG0-B0 M312L2923BG0-CB3 M312L5720

Samsung Electronic
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. M312L2920BG0 M312L2920BG0-A2 M312L2920BG0-B0 M312L2920BG0-CB3 M312L2923BG0-A2 M312L2923BG0-B0 M312L2923BG0-CB3 M312L5720BG0-CB3 M312L5720BG0-A2 M312L5720BG0-B0
OCR Text ...rganization 128M x 72 128M x 72 256M x 72 DDR SDRAM Component Composition 64Mx8( K4H510838B) * 18EA 128Mx4( K4H510438B) * 18EA 128Mx4(...bit(Data-in/data-out) Pin Name DM0 ~ DM8 VDD VDDQ VSS VREF VDDSPD SDA SCL SA0 ~ 2 NC Data - in mask ...
Description TVS UNIDIRECT 1500W 150V SMC
TVS 1500W 15V UNIDIRECT SMC
DDR SDRAM Registered Module DDR SDRAM的注册模

File Size 272.02K  /  18 Page

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    M312L2920BT M312L2920BTS-A2 M312L2920BTS-CAA M312L2923BTS-A2 M312L2923BTS-CAA M383L2920BTS-A2 M383L2920BTS-CAA M383L2923

SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. M312L2920BT M312L2920BTS-A2 M312L2920BTS-CAA M312L2923BTS-A2 M312L2923BTS-CAA M383L2920BTS-A2 M383L2920BTS-CAA M383L2923BTS-A2 M383L2923BTS-CAA M383L6523BTS-A2 M383L5628BT1-CAA M312L5628BT0-CAA M383L5628BT1-A2 M312L5628BT0-A2 M312L6523BTS-CAA M383L6523BTS-CAA M312L6523BTS-A2
OCR Text ...on 64M x 72 128M x 72 128M x 72 256M x 72 64M x 72 128M x 72 128M x 72 256M x 72 DDR SDRAM Component Composition 64Mx8( K4H510838B) * ...bit(Data-in/data-out) Pin Name DM0 ~ DM8 VDD VDDQ VSS VREF VDDSPD SDA SCL SA0 ~ 2 NC Data - in mask ...
Description DDR SDRAM Registered Module

File Size 257.60K  /  23 Page

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For 256m-bit Found Datasheets File :: 676    Search Time::1.688ms    
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