... to 2SD1261 and 2SD1261A
10.00.3
8.50.2 6.00.5
3.40.3
Unit: mm
1.00.1
q q q
High foward current transfer ratio hFE High-spe...3V, IC = - 0.5A VCE = -3V, IC = -3A VCE = -3V, IC = -3A IC = -3A, IB = -12mA IC = -5A, IB = -20mA VC...
Description
Silicon PNP epitaxial planar type Darlington(For power amplification and switching)
...150 -55 to +150 Unit V
16.70.3
3.10.1
14.00.5
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SB95...3V, IC = - 0.5A VCE = -3V, IC = -3A VCE = -3V, IC = -3A IC = -3A, IB = -12mA IC = -5A, IB = -20mA VC...
Description
Silicon PNP epitaxial planar type Darlington(For power amplification and switching)
...ode has low voltage dispersion. 3) Strong protection against reverse power surges due to "L" loads. 4) Darlington connection for high DC cur...3V, IC=0.5A IC/IB=500mA/1mA IC/IB=500mA/1mA VCB=5v, IE=-0.1A, f=30MHz VCE=10V, IE=0A, f=1MHz IC=0.8A...
Description
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) Power transistor (9010V, 3A) Power transistor (9010V/ 3A) SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
...ts I =B2 8mA = Max 5 Es B1 I R= 3 L Fall Time tf V = 4V Max 3 BB2
2SD1024
hFE - I C
10000
50C
100C
Tc = 150C
DC Current Gain hFE
1000
25C VCE = 3V Pulse width = 300s 1 10 12
0C
-25C
-55C
100
0.1
Co...
... IC = 10A IB1 = IB2 = 30mA RL = 3 VBB2 = 4V
VCE(sat) VBE(sat) jc fT ton ts tf
V V /W MHz
s
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
2SD1027
hFE - I C
VCE = 3V
10000 50C
100C
Tc = 150C
DC Current Gain...