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  32m-bit Datasheet PDF File

For 32m-bit Found Datasheets File :: 1513    Search Time::2.031ms    
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    K4S510832B-TC75 K4S510832B-TCL75 K4S510432B-TC K4S510432B-TC75 K4S510432B-TCL75 K4S511632B-TC75 K4S511632B-TCL75

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4S510832B-TC75 K4S510832B-TCL75 K4S510432B-TC K4S510432B-TC75 K4S510432B-TCL75 K4S511632B-TC75 K4S511632B-TCL75
OCR Text ... (x4, x8, x16) CMOS SDRAM 32M x 4Bit x 4 Banks / 16M x 8Bit x 4 Banks / 8M x 16Bit x 4 Banks SDRAM FEATURES * JEDEC standard 3.3V po...bit write operation * DQM (x4,x8) & L(U)DQM (x16) for masking * Auto & self refresh * 64ms refresh p...
Description 512Mb B-die SDRAM Specification

File Size 147.30K  /  15 Page

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    K4S560832E-NCL75 K4S561632E-NCL60 K4S561632E-NCL75 K4S560432E-NC K4S560432E-NCL75 K4S561632E-NC75

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4S560832E-NCL75 K4S561632E-NCL60 K4S561632E-NCL75 K4S560432E-NC K4S560432E-NCL75 K4S561632E-NC75
OCR Text ...C(L)60/75 Orgainization 64M x 4 32M x 8 16M x 16 Max Freq. 133MHz 133MHz 166/133MHz Interface LVTTL LVTTL LVTTL Package 54pin sTSOP 54pin sTSOP 54pin sTSOP Organization 64Mx4 32Mx8 16Mx16 Row Address A0~A12 A0~A12 A0~A12 Column Add...
Description 16M x 16 SDRAM, LVTTL, 133MHz
256Mb E-die SDRAM Specification 54pin sTSOP-II

File Size 205.22K  /  14 Page

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    K4S560832E-TC75 K4S560832E-TL75 K4S561632E K4S561632E-TC60 K4S561632E-TC75 K4S561632E-TL60 K4S561632E-TL75 K4S560432E-TL

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4S560832E-TC75 K4S560832E-TL75 K4S561632E K4S561632E-TC60 K4S561632E-TC75 K4S561632E-TL60 K4S561632E-TL75 K4S560432E-TL75 K4S560432E-TC75 K4S560432E-TC
OCR Text ...C(L)60/75 Orgainization 64M x 4 32M x 8 16M x 16 Max Freq. 133MHz 133MHz 166MHz Interface LVTTL LVTTL LVTTL Package 54pin TSOP 54pin TSOP 54pin TSOP Organization 64Mx4 32Mx8 16Mx16 Row Address A0~A12 A0~A12 A0~A12 Column Address A0...
Description 256Mb E-die SDRAM Specification 54pin sTSOP-II

File Size 196.59K  /  14 Page

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    P13B16212A P13B16212V M464S3254DTS PC133 M464S3254DTS-L1H_C1H M464S3254DTS-L1L_C1L M464S3254DTS-L7A_C7A M464S3254DTS-L7C

SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. P13B16212A P13B16212V M464S3254DTS PC133 M464S3254DTS-L1H_C1H M464S3254DTS-L1L_C1L M464S3254DTS-L7A_C7A M464S3254DTS-L7C_C7C M464S3254DTS-L1L/C1L M464S3254DTS-L7A/C7A M464S3254DTS-L1H/C1H M464S3254DTS-L7C/C7C
OCR Text ... The Samsung M464S3254DTS is a 32M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M464S3254DTS consists of eight CMOS 16M x 16 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin T...
Description Protective Eyeglasses RoHS Compliant: NA
Personal protection, Spectacles; RoHS Compliant: NA
Electrically Conductive Floor Mat 1/8 inch x 4 feet x 8 feet RoHS Compliant: NA
32Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD
32Mx64 SDRAM SODIMM based on 16Mx16 4Banks 8K Refresh3.3V Synchronous DRAMs with SPD

File Size 165.11K  /  11 Page

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    MBM30LV0032 MBM30LV0032-PFTN MBM30LV0032-PFTR

Fujitsu Microelectronics
FUJITSU[Fujitsu Media Devices Limited]
Part No. MBM30LV0032 MBM30LV0032-PFTN MBM30LV0032-PFTR
OCR Text 32M (4M x 8) BIT NAND-type MBM30LV0032 s DESCRIPTION The MBM30LV0032 device is a single 3.3 V 4M x 8 bit NAND flash memory organized as 528 byte x 16 pages x 512 blocks. Each 528 byte page contains 16 bytes of optionally selected spare...
Description FLASH MEMORY 32M (4M x 8) BIT NAND-type

File Size 286.17K  /  42 Page

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    MH32S72AVJA-6 B00010

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. MH32S72AVJA-6 B00010
OCR Text ...t of eighteen industry standard 32M x 4 Sy nchronous DRAMs in TSOP. The TSOP on a card edge dual in-line package prov ides any application w...BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM PIN NO. 1 2 3 4 5 6 7 8 9 10 11 12 13 1...
Description From old datasheet system
2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM

File Size 949.30K  /  56 Page

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    MH32S72VJA-6 B99038

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. MH32S72VJA-6 B99038
OCR Text ...t of eighteen industry standard 32M x 4 Synchronous DRAMs in TSOP. The TSOP on a card edge dual in-line package provides any application whe...BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM PIN NO. 1 2 3 4 5 6 7 8 9 10 11 12 13 1...
Description From old datasheet system
2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM

File Size 931.72K  /  56 Page

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    V437332S04V V437332S04VXTG-10PC V437332S04VXTG-75 V437332S04VXTG-75PC

Mosel Vitelic, Corp.
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
Part No. V437332S04V V437332S04VXTG-10PC V437332S04VXTG-75 V437332S04VXTG-75PC
OCR Text 32M x 72 HIGH PERFORMANCE UNBUFFERED ECC SDRAM MODULE PRELIMINARY CILETIV LESOM Features V437332S04V Rev. 1.0 December 2001 Descr...bit Oganization SDRAM Modules s Utilizes High Performance 128Mbit, 16M x 8 SDRAM in TSOPII-54 Packag...
Description 3.3 VOLT 32M x 72 HIGH PERFORMANCE UNBUFFERED ECC SDRAM MODULE 3.332M × 72配置高性能无缓冲ECC内存模块

File Size 86.55K  /  12 Page

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    V437432E24V V437432E24VXTG-10PC V437432E24VXTG-75 V437432E24VXTG-75PC

MOSEL[Mosel Vitelic, Corp]
Part No. V437432E24V V437432E24VXTG-10PC V437432E24VXTG-75 V437432E24VXTG-75PC
OCR Text 32M x 72 HIGH PERFORMANCE REGISTERED SDRAM ECC MODULE PRELIMINARY s 168 Pin Registered ECC 33,554,432 x 72 bit Oganization SDRAM Modules s Utilizes High Performance 32M x 8 SDRAM in TSOPII-54 Packages s Fully PC Board Layout Compatibl...
Description 3.3 VOLT 32M x 72 HIGH PERFORMANCE REGISTERED SDRAM ECC MODULE

File Size 74.75K  /  13 Page

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