52.0v. pdf Datasheet P2 Full Text Search --- IC-ON-LINE


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52.0v. Datasheet PDF File

For 52.0v. Found Datasheets File :: 366 Search Time::1.281ms
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				IRF[International Rectifier]
Part No.	IRFIB5N65 IRFIB5N65A
OCR Text	...V, VGS = 0V A --- --- 250 VDS = 520V, VGS = 0V, T J = 125C --- --- 100 VGS = 30V nA --- --- -100 VGS = -30V Dynamic @ TJ = 25C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter...
Description	Power MOSFET(Vdss=650V, Rds(on)max=0.93ohm, Id=5.1A)
File Size	99.33K / 8 Page	View it Online	Download Datasheet

				Samwin
Part No.	SW4N65
OCR Text	... =650v, v gs =0v - - 1 ua v ds =520v, t c =125 o c - - 10 ua i gss gate to source leakage current, forward v gs =30v, v ds =0v - - 100 na v gs = - 30v, v ds =0v - - - 100 na gate to source leakage current, reverse on characteristics v gs(th...
Description	N-Channel MOSFET
File Size	793.04K / 7 Page	View it Online	Download Datasheet

				ShenZhen FreesCale Electronics. Co., Ltd
Part No.	AOT10N65
OCR Text	...totalgatecharge v gs =10v,v ds =520v,i d =10a gatesourcecharge gatedraincharge i dss zerogatevoltagedraincurrent v ds =650v,v gs =0v diodeforwardvoltage v ds =5v, i d =250 m a v ds =520v,t j =125c electrical characteristics (t j =25c unles...
Description	650V,10A N-Channel MOSFET
File Size	523.83K / 6 Page	View it Online	Download Datasheet

				Xian Semipower Electronic Technology Co., Ltd.
Part No.	SW10N65
OCR Text	... =650v, v gs =0v - - 1 ua v ds =520v, t c =125 o c - - 5 0 ua i gss gate to source leakage current, forward v gs =30v, v ds =0v - - 100 na v gs = - 30v, v ds =0v - - - 100 na gate to source leakage current, reverse on characteristics v gs(t...
Description	N-channel MOSFET
File Size	719.79K / 7 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductors
Part No.	AOD7N65
OCR Text	... v ds =5v, i d =250 m a v ds =520v, t j =125c i s =1a,v gs =0v v ds =40v, i d =3.5a forward transconductance dynamic parameters diode forward voltage gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge v gs =10v, v ds =520v, i d ...
Description	650V,7A N-Channel MOSFET
File Size	385.06K / 6 Page	View it Online	Download Datasheet

				Xian Semipower Electronic Technology Co., Ltd.
Part No.	SWD4N65
OCR Text	... =650v, v gs =0v - - 1 ua v ds =520v, t c =125 o c - - 10 ua i gss gate to source leakage current, forward v gs =30v, v ds =0v - - 100 na v gs = - 30v, v ds =0v - - - 100 na gate to source leakage current, reverse on characteristics v gs(th...
Description	N-channel MOSFET (TO-251 , TO-252)
File Size	709.80K / 7 Page	View it Online	Download Datasheet

				Xian Semipower Electronic Technology Co., Ltd.
Part No.	SW2N65
OCR Text	... =650v, v gs =0v - - 1 ua v ds =520v, t c =125 o c - - 10 ua i gss gate to source leakage current, forward v gs =30v, v ds =0v - - 100 na v gs = - 30v, v ds =0v - - - 100 na gate to source leakage current, reverse on characteristics v gs(th...
Description	N-channel MOSFET
File Size	705.72K / 7 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductors Alpha & Omega Semiconductor...
Part No.	AOTF12N65 AOT12N65
OCR Text	... v ds =5v i d =250 m a v ds =520v, t j =125c turn-off delaytime v gs =10v, v ds =325v, i d =12a, r g =25 w gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =10v, v ds =520v, i d =12a gate source charge...
Description	650V, 12A N-Channel MOSFET
File Size	151.78K / 6 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductors
Part No.	AOTF10N65 AOT10N65
OCR Text	...totalgatecharge v gs =10v,v ds =520v,i d =10a gatesourcechargegatedraincharge i dss zerogatevoltagedraincurrent v ds =650v,v gs =0v diodeforwardvoltage v ds =5v, i d =250 m a v ds =520v,t j =125c electrical characteristics (t j =25c unless...
Description	650V,10A N-Channel MOSFET
File Size	200.78K / 6 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductors
Part No.	AOTF7N65 AOT7N65
OCR Text	...al gate charge v gs =10v, v ds =520v, i d =7a body diode reverse recovery time dynamic parameters v ds =5v i d =250 m a v ds =520v, t j =125c v ds =0v, v gs =30v v drain-source breakdown voltage i d =250 a, v gs =0v, t j =25c i d =250 ...
Description	650V, 7A N-Channel MOSFET
File Size	405.37K / 6 Page	View it Online	Download Datasheet

For 52.0v. Found Datasheets File :: 366 Search Time::1.281ms
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