5200 pdf Datasheet P2 Description --- IC-ON-LINE


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5200 Datasheet PDF File

For 5200 Found Datasheets File :: 17+ Page :: | 1 | <2> |

					Tyco Electronics
Part No.	2-1123309-2 2-1123309-3
Description	DOUBLE RW HEADER ASSY 4P DOUBLE ROW HEADER ASSY 4P(H TYPE) <DYNAMIC D-5200 D>
File Size	234.17K / 2 Page	View it Online	Download Datasheet


Part No.	DCR1675SZ50 DCR1675SZ52
Description	4710 A, 5000 V, SCR 4710 A, 5200 V, SCR
File Size	237.07K / 8 Page	View it Online	Download Datasheet

					Agere Systems, Inc. PHOENIX CONTACT Deutschland GmbH
Part No.	5200 5200-SERIES
Description	5200-Series 64 x 64 MEMS Optical Switch Module 64 x 64 MEMS Optical Switch Module 64 × 64 MEMS光开关模
File Size	54.53K / 4 Page	View it Online	Download Datasheet

					MERRIMAC INDUSTRIES INC Merrimac Industries, Inc.
Part No.	CSM-6M-.75G CSM-6M-1.5G CSM-6M-10G CSM-6M-12G CSM-6M-15G CSM-6M-3G CSM-6M-4G CSM-6M-6G CSM-10M-.75G CSM-20M-.75G CSM-30M-.75G CSM-30M-1.5G CSM-30M-10G CSM-30M-12G CSM-30M-15G CSM-30M-3G CSM-30M-4G CSM-30M-6G CSM-20M-1.5G CSM-20M-10G CSM-20M-12G CSM-20M-15G CSM-20M-6G CSM-10M-1.5G CSM-10M-10G CSM-10M-12G CSM-10M-15G CSM-10M-3G CSM-10M-4G CSM-10M-6G CSM-20M-4G CSM-20M-3G
Description	12400 MHz - 18000 MHz RF/MICROWAVE DIRECTIONAL COUPLER, 0.6 dB INSERTION LOSS-MAX 2600 MHz - 5200 MHz RF/MICROWAVE DIRECTIONAL COUPLER, 0.2 dB INSERTION LOSS-MAX DIRECTIONAL COUPLERS
File Size	43.66K / 2 Page	View it Online	Download Datasheet

					MITEQ INC
Part No.	CD2-200-101-30N CD2-201-522-20N
Description	20 MHz - 100 MHz RF/MICROWAVE BI-DIRECTIONAL COUPLER, 0.3 dB INSERTION LOSS-MAX 200 MHz - 5200 MHz RF/MICROWAVE BI-DIRECTIONAL COUPLER, 0.5 dB INSERTION LOSS-MAX
File Size	69.33K / 3 Page	View it Online	Download Datasheet

					SIEMENS AG ITT Interconnect Solutions Infineon Technologies AG
Part No.	HYB-5314-03-TNC-79 HYB-5315-03-TNC-79 HYB-5313-03-NNN-79 HYB-5317-03-TNC-79 HYB-5311-03-NNN-79
Description	4000 MHz - 8000 MHz RF/MICROWAVE 90 DEGREE HYBRID COUPLER, 0.3 dB INSERTION LOSS-MAX 7000 MHz - 12400 MHz RF/MICROWAVE 90 DEGREE HYBRID COUPLER, 0.5 dB INSERTION LOSS-MAX 2600 MHz - 5200 MHz RF/MICROWAVE 90 DEGREE HYBRID COUPLER, 0.3 dB INSERTION LOSS-MAX 12400 MHz - 18000 MHz RF/MICROWAVE 90 DEGREE HYBRID COUPLER, 0.6 dB INSERTION LOSS-MAX 1000 MHz - 2000 MHz RF/MICROWAVE 90 DEGREE HYBRID COUPLER, 0.2 dB INSERTION LOSS-MAX
File Size	74.17K / 1 Page	View it Online	Download Datasheet

					Spansion Inc. Spansion, Inc. SPANSION LLC
Part No.	S29GL064M90FBIR00 S29GL064M90FCIR02 S29GL064M90FCIR03 S29GL064M90FCIR10 S29GL064M90FCIR12 S29GL064M90FCIR13 S29GL064M90FCIR20 S29GL256M10TAIR13 S29GL064M90TDIR13 S29GL064M90TDIR00 S29GL064M90TDIR02 S29GL064M90TDIR03 S29GL064M90TDIR10 S29GL064M90TDIR12 S29GL064M90FDIR33 S29GL064M90TBIR33 S29GL064M90TBIR32 S29GL064M90TFIR23 S29GL256M10TFIR23 S29GL064M90BCIR13 S29GL064M90BDIR10 S29GL064M90BDIR12 S29GL064M90FBIR20 S29GL064M90BDIR22 S29GL064M90FBIR22 S29GL064M90FDIR03 S29GL064M90BDIR33 S29GL064M90BDIR02 S29GL064M90BDIR32 S29GL064M90BDIR23 S29GL064M90TBIR22 S29GL064M90TBIR23 S29GL064M90TCIR20 S29GL064M90TBIR10 S29GL064M90BFIR10 S29GL064M90BFIR20 S29GL128M90TDIR82 S29GL064M90FAIR12 S29GL064M90FAIR10 S29GL128M90TFIR82 S29GL256M10TAIR20 S29GL128M90TAIR13 S29GL128M90TDIR12 S29GL128M90TAIR10 S29GL128M90FDIR22 S29GL064M90BCIR23 S29GL064M90FBIR03 S29GL256M10TFIR20 S29GL064M90BFIR00 S29GL064M90BDIR13 S29GL064M90TDIR22 SPANSIONINC.-S29GL064M90BFIR10 SPANSIONLLC-S29GL064M90TBIR20 S29GL064M90FFIR23 SPANSIONLLC-S29GL064M90FFIR32
Description	MOSFET, Switching; VDSS (V): 300; ID (A): 88; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.042; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5000; toff (µs) typ: -; Package: TO-3P MOSFET, Switching; VDSS (V): 30; ID (A): 60; Pch : 90; RDS (ON) typ. (ohm) @10V: 0.0046; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2500; toff (µs) typ: 0.07; Package: TO-220AB MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (S)- (2) MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (L) MOSFET, Switching; VDSS (V): 150; ID (A): 70; Pch : -; RDS (ON) typ. (ohm) @10V: 0.022; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5100; toff (µs) typ: -; Package: TO-3P MOSFET, Switching; VDSS (V): 200; ID (A): 25; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.036; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN MOSFET, Switching; VDSS (V): 200; ID (A): 96; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.02; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 4900; toff (µs) typ: 0.22; Package: TO-3P MOSFET, Switching; VDSS (V): 290; ID (A): 18; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.07; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN MOSFET, Switching; VDSS (V): 230; ID (A): 35; Pch : -; RDS (ON) typ. (ohm) @10V: 0.03; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5200; toff (µs) typ: -; Package: TO-3PFM MOSFET, Switching; VDSS (V): 300; ID (A): 40; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.058; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5150; toff (µs) typ: 0.22; Package: TO-3P 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 3.0伏只页面模式闪存具有0.23微米工艺技术的MirrorBit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 4M X 16 FLASH 3V PROM, 90 ns, PDSO48 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 4M X 16 FLASH 3V PROM, 90 ns, PBGA64 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 16M X 16 FLASH 3V PROM, 100 ns, PDSO56 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 8M X 16 FLASH 3V PROM, 90 ns, PDSO56 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 8M X 8 FLASH 3V PROM, 90 ns, PBGA63 MOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : 50; RDS (ON) typ. (ohm) @10V: 0.008; RDS (ON) typ. (ohm) @4V[4.5V]: 0.013 (5V); RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1400; toff (µs) typ: 0.055; Package: LDPAK (L)
File Size	2,173.74K / 160 Page	View it Online	Download Datasheet

For 5200 Found Datasheets File :: 17+ Page :: | 1 | <2> |

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