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  561638 Datasheet PDF File

For 561638 Found Datasheets File :: 26+       Page :: | 1 | <2> | 3 |   

    K4C560838C-TCD3 K4C561638C-TCD3 K4C561638C-TCD4000 K4C561638C-TCDA K4C560838C-TCD4 K4C560838C-TCDA K4C561638C-TCD4

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4C560838C-TCD3 K4C561638C-TCD3 K4C561638C-TCD4000 K4C561638C-TCDA K4C560838C-TCD4 K4C560838C-TCDA K4C561638C-TCD4
Description 256Mb Network-DRAM

File Size 877.29K  /  42 Page

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HUA FENG CIRCUIT





    K4H561638N-LCB3T00 K4H560838N-LLB30

Samsung semiconductor
Part No. K4H561638N-LCB3T00 K4H560838N-LLB30
Description N-die DDR SDRAM
32M X 8 DDR DRAM, 0.7 ns, PDSO66

File Size 325.32K  /  24 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K4C561638C-TCDA K4C560838C-TCDA K4C561638C-TCD4000 K4C560838C-TCD3 K4C560838C-TCDA0 K4C560838C-TCD40
Description Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 220uF; Voltage: 200V; Case Size: 18x31 mm; Packaging: Bulk
Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 47uF; Voltage: 200V; Case Size: 12.5x20 mm; Packaging: Bulk 256Mb的网络内
256Mb Network-DRAM 256Mb的网络内
32M X 8 SYNCHRONOUS DRAM, 0.75 ns, PDSO66
32M X 8 SYNCHRONOUS DRAM, 0.65 ns, PDSO66

File Size 885.55K  /  42 Page

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    K4H560838D-TCC4 K4H560838D-TCCC K4H561638D-TCCC K4H56038D-TC K4H561638D-TCC4

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4H560838D-TCC4 K4H560838D-TCCC K4H561638D-TCCC K4H56038D-TC K4H561638D-TCC4
Description 256Mb D-die DDR400 SDRAM Specification 256Mb芯片支持DDR400内存规格

File Size 166.12K  /  18 Page

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    K4H560438H K4H560438H-UC_LA2 K4H560438H-UC_LB0 K4H561638H-UC_LA2 K4H561638H-UC_LB0 K4H561638H-UC_LB3 K4H561638H-UC_LCC K

SAMSUNG[Samsung semiconductor]
Part No. K4H560438H K4H560438H-UC_LA2 K4H560438H-UC_LB0 K4H561638H-UC_LA2 K4H561638H-UC_LB0 K4H561638H-UC_LB3 K4H561638H-UC_LCC K4H561638H K4H560838H-UC_LCC K4H560838H K4H560838H-UC_LA2 K4H560838H-UC_LB0 K4H560838H-UC_LB3
Description 256Mb H-die DDR SDRAM Specification

File Size 356.30K  /  24 Page

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    K4H560438J-LC/LB0 K4H560438J-LC/LB3 K4H560838J-LC/LCC K4H561638J-LC/LB3 K4H561638J-LC/LCC K4H560838J-LC/LB3

Samsung semiconductor
Part No. K4H560438J-LC/LB0 K4H560438J-LC/LB3 K4H560838J-LC/LCC K4H561638J-LC/LB3 K4H561638J-LC/LCC K4H560838J-LC/LB3
Description 256Mb J-die DDR SDRAM Specification

File Size 352.76K  /  24 Page

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    http://
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4H560438D-GCA2 K4H561638D-GLB3 K4H560838D-GLB3 K4H561638D-GCA2 K4H561638D-GLB0 K4H560438D-GLB0 K4H560438D-GLB3 K4H560838D-GLB0 K4H560838D-GCB3 K4H560838D-GCA2 K4H561638D-GLA2
Description DIODE ZENER SINGLE 200mW 33Vz 0.05mA-Izt 0.05 0.05uA-Ir 25 SOD-323 3K/REEL 的DDR 256Mb
DIODE ZENER SINGLE 500mW 28Vz 0.05mA-Izt 0.05 0.05uA-Ir 21.2 SOD-123 3K/REEL 的DDR 256Mb
DIODE ZENER SINGLE 200mW 30Vz 0.05mA-Izt 0.05 0.05uA-Ir 22.8 SOD-323 3K/REEL 的DDR 256Mb
DIODE ZENER SINGLE 500mW 36Vz 0.05mA-Izt 0.05 0.05uA-Ir 27.3 SOD-123 3K/REEL 的DDR 256Mb
DIODE ZENER SINGLE 150mW 36Vz 0.05mA-Izt 0.05 0.05uA-Ir 27.3 SOD-523 3K/REEL 的DDR 256Mb
DIODE ZENER SINGLE 150mW 33Vz 0.05mA-Izt 0.05 0.05uA-Ir 25 SOD-523 3K/REEL 的DDR 256Mb
DIODE ZENER SINGLE 200mW 36Vz 0.05mA-Izt 0.05 0.05uA-Ir 27.3 SOD-323 3K/REEL
DIODE ZENER SINGLE 200mW 28Vz 0.05mA-Izt 0.05 0.05uA-Ir 21.2 SOD-323 3K/REEL
DIODE ZENER SINGLE 500mW 39Vz 0.05mA-Izt 0.05 0.05uA-Ir 29.6 SOD-123 3K/REEL
DIODE ZENER SINGLE 200mW 39Vz 0.05mA-Izt 0.05 0.05uA-Ir 29.6 SOD-323 3K/REEL

File Size 293.31K  /  26 Page

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    K4H561638D-TC_LB0 K4H560838D-TC_LA0 K4H560838D-TC_LA2 K4H560838D-TC_LB3 K4H560838D-TC_LB0 K4H561638D-TC_LA0 K4H561638D-T

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4H561638D-TC_LB0 K4H560838D-TC_LA0 K4H560838D-TC_LA2 K4H560838D-TC_LB3 K4H560838D-TC_LB0 K4H561638D-TC_LA0 K4H561638D-TC_LA2 K4H561638D-TC_LB3 K4H560438D-TC_LB3 K4H560438D-TC K4H560438D-TC_LA0 K4H560438D-TC_LA2 K4H560438D-TC_LB0 K4H561638D-TC/LA2 K4H561638D-TC/LB0 K4H561638D-TC/LA0 K4H561638D-TC/LB3
Description 256MB

File Size 233.83K  /  25 Page

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    K4H560838H-UC/LCC K4H561638H-UC/LCC K4H560438H-UC/LA2 K4H560838H-UC/LA2 K4H561638H-UC/LA2 K4H560438H-UC/LB0 K4H561638H-U

Atmel, Corp.
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4H560838H-UC/LCC K4H561638H-UC/LCC K4H560438H-UC/LA2 K4H560838H-UC/LA2 K4H561638H-UC/LA2 K4H560438H-UC/LB0 K4H561638H-UC/LB0 K4H560838H-UC/LB3 K4H561638H-UC/LB3 K4H560838H-UC/LB0 K4H560438H-UCA20 K4H560838H-UCA20 K4H560838H-UCB30
Description 32M X 8 DDR DRAM, 0.7 ns, PDSO66 ROHS COMPLIANT, TSOP2-66
32M X 8 DDR DRAM, 0.75 ns, PDSO66 ROHS COMPLIANT, TSOP2-66
64M X 4 DDR DRAM, 0.75 ns, PDSO66 ROHS COMPLIANT, TSOP2-66
256Mb H-die DDR SDRAM Specification

File Size 361.04K  /  24 Page

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    K4H561638D-GCB0 K4H561638D-GLB0 K4H561638D-GLB3 K4H560838D-GCB0 K4H560838D-GCB3 K4H560838D-GLA2 K4H560838D-GLB0 K4H56083

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4H561638D-GCB0 K4H561638D-GLB0 K4H561638D-GLB3 K4H560838D-GCB0 K4H560838D-GCB3 K4H560838D-GLA2 K4H560838D-GLB0 K4H560838D-GCA2 K4H560838D-GLB3 K4H561638D-GCA2 K4H561638D-GCB3 K4H561638D-GLA2 K4H560438D-GLB3 K4H560438D-GC K4H560438D-GCA2 K4H560438D-GCB0 K4H560438D-GCB3 K4H560438D-GLA2 K4H560438D-GLB0
Description DDR 256MB

File Size 288.19K  /  26 Page

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