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Cree, Inc.
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| Part No. |
CGH35030F
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| OCR Text |
hemt for wimax crees cgh35030f is a gallium nitride (gan) high electron mobility transistor (hemt) designed specifcally for high e...3300 5.3 - j8.9 13.3 - j10.0 3400 6.7 - j8.6 12.1 - j8.9 3500 7.7 - j9.3 11.0 - j7.8 3600 7.5 - j10.... |
| Description |
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX S BAND, GaN, N-CHANNEL, RF POWER, HEMFET
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| File Size |
658.46K /
8 Page |
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M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
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| Part No. |
NPT1004 NPT1004-15
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| OCR Text |
... - 4000mhz 45 watt, 28 volt gan hemt rf specifcations (2-tone): v ds = 28v, i dq = 400ma, frequency = 2500mhz, tone spacing = 1mhz...3300-3500mhz): v ds = 28v, i dq = 350ma, p out, avg = 36.5dbm, single carrier ofdm waveform ... |
| Description |
Gallium Nitride 28V, 45W RF Power Transistor
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| File Size |
532.33K /
6 Page |
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it Online |
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CREE
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| Part No. |
CGHV27030S
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| OCR Text |
hemt t he cg hv27030s is an unm atched, gallium nitride (gan) high electron mobilit y tr ansistor (he mt) which off ers high effc...3300-3700 mhz at both 50 v and 28 v oper ations. the cghv27030s is also ideal for tactical... |
| Description |
GaN HEMT
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| File Size |
1,746.87K /
26 Page |
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it Online |
Download Datasheet |
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