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    ADS6616A4A ADS6616A4A-5 ADS6616A4A-6 ADS6616A4A-7 ADS6616A4A-7.5

A-DATA[A-Data Technology]
Part No. ADS6616A4A ADS6616A4A-5 ADS6616A4A-6 ADS6616A4A-7 ADS6616A4A-7.5
OCR Text ...he same pins. Makes data output hi-Z, Latches row addresses on the positive edge of the CLK with /RAS low Latches Column addresses on the positive edge of the CLK with /CAS low Enables write operation and row recharge. Power and Ground for ...
Description Synchronous DRAM(1M X 16 Bit X 4 Banks)

File Size 210.32K  /  8 Page

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    ADS6632A4A ADS6632A4A-5 ADS6632A4A-5.5 ADS6632A4A-6

ADATA Technology Co., Ltd.
A-DATA[A-Data Technology]
Part No. ADS6632A4A ADS6632A4A-5 ADS6632A4A-5.5 ADS6632A4A-6
OCR Text ...he same pins. Makes data output hi-Z, Latches row addresses on the positive edge of the CLK with /RAS low Latches Column addresses on the positive edge of the CLK with /CAS low Enables write operation and row recharge. Power and Ground for ...
Description Synchronous DRAM(512K X 32 Bit X 4 Banks)

File Size 229.91K  /  8 Page

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    ADS7608A4A ADS7608A4A-5 ADS7608A4A-55 ADS7608A4A-6 ADS7608A4A-7 ADS7608A4A-75 ADS7608A4A-7.5

ADATA Technology Co., Ltd.
A-DATA[A-Data Technology]
Part No. ADS7608A4A ADS7608A4A-5 ADS7608A4A-55 ADS7608A4A-6 ADS7608A4A-7 ADS7608A4A-75 ADS7608A4A-7.5
OCR Text ...he same pins. Makes data output hi-Z, Latches row addresses on the positive edge of the CLK with /RAS low Latches Column addresses on the positive edge of the CLK with /CAS low Enables write operation and row recharge. Power and Ground for ...
Description    Synchronous DRAM(4M X 8 Bit X 4 Banks)
Synchronous DRAM(4M X 8 Bit X 4 Banks) 同步DRAM4米8位4银行
Synchronous DRAM(4M X 8 Bit X 4 Banks) 同步DRAM米8位4银行
133 Mhz LVTTL synchronous DRAM, 4 M x 8 bit x 4 banks

File Size 209.31K  /  8 Page

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    ADS7616A4A ADS7616A4A-55 ADS7616A4A-6 ADS7616A4A-7 ADATATECHNOLOGYCO.LTD.-ADS7616A4A-7

A-DATA[A-Data Technology]
ADATA Technology Co., Ltd.
Part No. ADS7616A4A ADS7616A4A-55 ADS7616A4A-6 ADS7616A4A-7 ADATATECHNOLOGYCO.LTD.-ADS7616A4A-7
OCR Text ...he same pins. Makes data output hi-Z, Latches row addresses on the positive edge of the CLK with /RAS low Latches Column addresses on the positive edge of the CLK with /CAS low Enables write operation and row recharge. Power and Ground for ...
Description    Synchronous DRAM(2M X 16 Bit X 4 Banks)
Synchronous DRAM(2M X 16 Bit X 4 Banks) 同步DRAM米16位4个银行)

File Size 196.04K  /  8 Page

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