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For mosfets Found Datasheets File :: 19916    Search Time::1.594ms    
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    IRF1404L IRF1404S

IRF[International Rectifier]
Part No. IRF1404L IRF1404S
OCR Text ...Seventh Generation HEXFET Power mosfets from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device ...
Description Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A?)
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A)

File Size 237.30K  /  10 Page

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    IRF1404

International Rectifier
Part No. IRF1404
OCR Text ...enth Generation HEXFET(R) Power mosfets from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device ...
Description Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A?
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A?)
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A)
Power MOSFET(Vdss=40V/ Rds(on)=0.004ohm/ Id=162A)

File Size 105.33K  /  8 Page

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    Kersemi Electronic Co., Ltd.
Kersemi Electronic Co., Ltd...
Part No. IRF1404L IRF1404S
OCR Text mosfets from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfe...
Description HEXFET? Power MOSFET

File Size 3,989.19K  /  10 Page

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    FDP2570 FDB2570

Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. FDP2570 FDB2570
OCR Text ...ny application requiring a 150V mosfets with low on-resistance and fast switching will benefit. These mosfets feature faster switching and lower gate charge than other mosfets with comparable RDS(ON) specifications. The result is a MOSFET t...
Description 150V N-Channel PowerTrench MOSFET 22 A, 150 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
150V N-Channel PowerTrench MOSFET

File Size 74.94K  /  5 Page

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    IRF520VPBF

International Rectifier
Part No. IRF520VPBF
OCR Text ...-Free Advanced HEXFET(R) Power mosfets from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device ...
Description HEXFET? Power MOSFET
HEXFET㈢ Power MOSFET

File Size 143.43K  /  8 Page

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    IXFN73N30 IXFK73N30

IXYS[IXYS Corporation]
Part No. IXFN73N30 IXFK73N30
OCR Text mosfets N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr V DSS IXFK 73 N 30 IXFN 73 N 30 ID25 RDS(on) 45 m 45 m 300 V 73 A 300 V 73 A trr 200 ns TO-264 AA (IXFK) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR d...
Description Discrete mosfets: HiPerFET Power mosfets

File Size 130.23K  /  4 Page

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    Kersemi Electronic Co., Ltd.
Kersemi Electronic Co., Ltd...
Part No. IRF1404LPBF IRF1404SPBF
OCR Text mosfets from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfe...
Description HEXFET? Power MOSFET

File Size 3,880.58K  /  10 Page

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    SC1110TSTRT SC1110CSTRT SC111004

Semtech Corporation
Part No. SC1110TSTRT SC1110CSTRT SC111004
OCR Text ... of inexpensive N-channel power mosfets. The SC1110 operates at a fixed 250kHz, providing an optimum compromise between efficiency, transient performance, external component size, and cost. SC1110 Features Generates termination volta...
Description Sink and Source DC/DC Controller for Termination Power Supply Applications

File Size 287.97K  /  12 Page

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    STF33N60M2 STW33N60M2 STI33N60M2 STP33N60M2

STMicroelectronics
Part No. STF33N60M2 STW33N60M2 STI33N60M2 STP33N60M2
OCR Text ... mdmesh ii plus? low q g power mosfets in to-220fp, i 2 pak, to-220 and to-247 packages datasheet - production data figure 1. internal schematic diagram features ? extremely low gate charge ? lower r ds(on) x area vs previous generation...
Description N-channel 600 V, 0.108 typ., 26 A MDmesh II Plus low Qg Power mosfets in TO-220FP, I2PAK, TO-220 and TO-247 packages

File Size 1,085.58K  /  20 Page

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    IRF234 IRF235 IRF236 IRF237

HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. IRF234 IRF235 IRF236 IRF237
OCR Text mosfets Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power mosfets designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mod...
Description 8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power mosfets
8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power mosfets 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA

File Size 68.51K  /  7 Page

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For mosfets Found Datasheets File :: 19916    Search Time::1.594ms    
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