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  N100E Datasheet PDF File

For N100E Found Datasheets File :: 31+       Page :: | 1 | <2> | 3 | 4 |   

    MTP1N100E_D ON2558 MTP1N100E MTP1N100E-D

ON Semiconductor
Motorola, Inc
Part No. MTP1N100E_D ON2558 MTP1N100E MTP1N100E-D
Description TMOS E-FET Power Field Effect Transistor N-Channel Enhancement - Mode Silicon Gate
From old datasheet system
TMOS POWER FET 1.0 AMPERES 1000 VOLTS RDS(on) = 9.0 OHM

File Size 203.42K  /  8 Page

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HUA FENG CIRCUIT





    MTB3N100E_D ON2419 MTB3N100E 3N100E MTB3N100E-D

Motorola, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
Part No. MTB3N100E_D ON2419 MTB3N100E 3N100E MTB3N100E-D
Description From old datasheet system
TMOS POWER FET 3.0 AMPERES 1000 VOLTS
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate

File Size 261.84K  /  10 Page

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    MTP3N100E MTP3N100E_D ON2598 3N100E MTP3N100E-D

MOTOROLA[Motorola, Inc]
Motorola, Inc.
ON SEMICONDUCTOR
Part No. MTP3N100E MTP3N100E_D ON2598 3N100E MTP3N100E-D
Description TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4.0 OHM
3 A, 1000 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

File Size 206.08K  /  8 Page

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    MOTOROLA[Motorola, Inc]
ON Semi
Part No. MTY10N100E_D ON2708 MTY10N100E
Description TMOS POWER FET 10 AMPERES 1000 VOLTS RDS(on) = 1.3 OHM
From old datasheet system

File Size 228.41K  /  8 Page

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    ON Semi
Part No. MTW10N100E_D ON2676
Description TMOS POWER FET 10 AMPERES 1000 VOLTS
From old datasheet system

File Size 164.49K  /  8 Page

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    MTV10N100E_D ON2669 MTV10N100E-D

ON Semiconductor
Part No. MTV10N100E_D ON2669 MTV10N100E-D
Description TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 10 AMPERES 1000 VOLTS

File Size 268.98K  /  10 Page

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    MTY14N100E_D ON2710 MTY14N100E MTY14N100 MTY14N100E-D

Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
Part No. MTY14N100E_D ON2710 MTY14N100E MTY14N100 MTY14N100E-D
Description TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM TMOS14安培,功率场效应晶体000伏特的RDS(on)\u003d 0.80欧姆
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM 14 A, 1000 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
From old datasheet system
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate

File Size 232.49K  /  8 Page

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    Motorola / Freescale Semiconductor
Motorola Semiconductor Products Inc
Part No. VN0300B MTM10N100E
Description From old datasheet system
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39

File Size 623.83K  /  19 Page

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    INTERSIL[Intersil Corporation]
Part No. HGTG34N100E2
Description 34A/ 1000V N-Channel IGBT
34A, 1000V N-Channel IGBT

File Size 38.45K  /  5 Page

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    Lattice Semiconductor, Corp.
LATTICE SEMICONDUCTOR CORP
Part No. LAMXO640C-3TN100E LAMXO256C-3TN100E LAMXO640E-3FTN256E
Description LA-MachXO Automotive Non-Volatile PLD For Low-Density Applications; LUTs: 640; Supply Voltage: 1.8V/2.5V/3.3V; I/Os: 74; Grade: -3; Package: Lead-Free TQFP; Pins: 100; Temp.: AUTO FLASH PLD, 4.9 ns, PQFP100
LA-MachXO Automotive Non-Volatile PLD For Low-Density Applications; LUTs: 256; Supply Voltage: 1.8V/2.5V/3.3V; I/Os: 78; Grade: -3; Package: Lead-Free TQFP; Pins: 100; Temp.: AUTO FLASH PLD, 4.9 ns, PQFP100
LA-MachXO Automotive Non-Volatile PLD For Low-Density Applications; LUTs: 640; Supply Voltage: 1.2V; I/Os: 159; Grade: -3; Package: Lead-Free ftBGA; Pins: 256; Temp.: AUTO

File Size 871.55K  /  77 Page

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For N100E Found Datasheets File :: 31+       Page :: | 1 | <2> | 3 | 4 |   

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