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Part No. MBR40150PT
OCR Text reverse voltage (v) maximum rms voltage (v) maximum dc blocking voltage (v) maximum average forward rectified current at t c=125c vrrm vrms vdc i f (av) tj tstg operating junction temperature range storage temperature range ? 65 to + 175 c ...
Description 40 A, 150 V, SILICON, RECTIFIER DIODE, TO-247AD
File Size 356.82K  /  3 Page

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    TOSHIBA
Part No. DF2B6.8M2SC
OCR Text ... ) ) ) ) v rwm : working peak reverse voltage v br : reverse breakdown voltage i br : reverse breakdown current i r : reverse current v c : clamp voltage i pp : peak pulse current r dyn : dynamic resistance fig. fig. fig. fig. 4.1 4.1...
Description ESD protection diode (bi-directional type)
File Size 254.12K  /  8 Page

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    TOSHIBA
Part No. DF2B12M2SC
OCR Text ... ) ) ) ) v rwm : working peak reverse voltage v br : reverse breakdown voltage i br : reverse breakdown current i r : reverse current v c : clamp voltage i pp : peak pulse current r dyn : dynamic resistance fig. fig. fig. fig. 4.1 4.1...
Description ESD protection diode (bi-directional type)
File Size 241.20K  /  8 Page

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    AP2348GN-HF14

Advanced Power Electronics Corp.
Part No. AP2348GN-HF14
OCR Text ...tance v ds =25v - 30 - pf c rss reverse transfer capacitance f=1.0mhz - 20 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =1a, v gs =0v - - 1.3 v t rr reverse recovery time i s =1...
Description Simple Drive Requirement
File Size 92.20K  /  4 Page

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    AP2346GN-HF AP2346GN-HF14

Advanced Power Electronics Corp.
Part No. AP2346GN-HF AP2346GN-HF14
OCR Text ...ance v ds =10v - 175 - pf c rss reverse transfer capacitance f=1.0mhz - 155 - pf r g gate resistance f=1.0mhz - 1.2 2.4 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =1.2a, v gs =0v ...
Description Capable of 1.8V Gate Drive, Lower Gate Charge
Fast Switching Performance
File Size 55.37K  /  4 Page

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    AP2340GN-HF14

Advanced Power Electronics Corp.
Part No. AP2340GN-HF14
OCR Text ...tance v ds =15v - 60 - pf c rss reverse transfer capacitance f=1.0mhz - 45 - pf r g gate resistance f=1.0mhz - 1.7 3.4 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =1.7a, v gs =0v -...
Description Fast Switching Characteristic
File Size 53.71K  /  4 Page

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    Advanced Power Electronics
Part No. AP9565GEM-HF-3
OCR Text ...nce v ds =-25v - 160 - pf c rss reverse transfer capacitance f=1.0mhz - 110 - pf r g gate resistance f=1.0mhz - 6 9 w symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-1.9a, v gs =0v - - -1.3 v t rr...
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
File Size 97.15K  /  5 Page

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    TY Semiconductor Co., Ltd
Part No. AP2324GN-HF
OCR Text ...ance v ds =20v - 125 - pf c rss reverse transfer capacitance f=1.0mhz - 115 - pf r g gate resistance f=1.0mhz - 1.7 - source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =1.2a, v gs =0v - ...
Description Advanced Power MOSFETs
File Size 96.71K  /  2 Page

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    AP2324GN-HF

Advanced Power Electronics Corp.
Part No. AP2324GN-HF
OCR Text ...ance v ds =20v - 125 - pf c rss reverse transfer capacitance f=1.0mhz - 115 - pf r g gate resistance f=1.0mhz - 1.7 - source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =1.2a, v gs =0v - ...
Description Capable of 2.5V gate drive, Lower Gate Charge
File Size 90.97K  /  4 Page

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DigiKey

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RS

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2903392 (ALTERNATE: VIP-3/SC/D37SUB/F/REVERSE)
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Onlinecomponents.com

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TTI

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APTR3216SURCK
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USB-00000005
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Maritex

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JCD402 SMA REVERSE
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Master Electronics

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VIP-3/SC/D37SUB/F/REVERSE
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200MSP2T2B2M6REREVERSE
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