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    HY5R256HCXXX HY5R256HC745

Hynix Semiconductor
Part No. HY5R256HCXXX HY5R256HC745
OCR Text ...nd data buses with independent row and column control yield over 95% bus efficiency. the direct rdram's 32 banks support up to four simultaneous transactions. system oriented features for mobile, graphics and large memory systems incl...
Description RDRAM

File Size 2,710.80K  /  64 Page

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    IS42S16100C1 IS42S16100C1-5T IS42S16100C1-5TL IS42S16100C1-6T IS42S16100C1-6TL IS42S16100C1-7T IS42S16100C1-7TI IS42S161

ISSI[Integrated Silicon Solution, Inc]
ISSI[Integrated Silicon Solution Inc]
Part No. IS42S16100C1 IS42S16100C1-5T IS42S16100C1-5TL IS42S16100C1-6T IS42S16100C1-6TL IS42S16100C1-7T IS42S16100C1-7TI IS42S16100C1-7TL IS42S16100C1-7TLI
OCR Text ...15 CLK CKE CS RAS Address Input row Address Input Bank Select Address Column Address Input Data DQ System Clock Input Clock Enable Chip Select row Address Strobe Command CAS WE LDQM UDQM VDD GND VDDQ GNDQ NC Column Address Strobe Command Wr...
Description 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

File Size 750.59K  /  79 Page

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    IS42S16400B IS42S16400B-6T IS42S16400B-6TL IS42S16400B-7T IS42S16400B-7TL

ETC[ETC]
Part No. IS42S16400B IS42S16400B-6T IS42S16400B-6TL IS42S16400B-7T IS42S16400B-7TL
OCR Text ...edge * Internal bank for hiding row access/precharge * Single 3.3V power supply * LVTTL interface * Programmable burst length - (1, 2, 4, 8, full page) * Programmable burst sequence: Sequential/Interleave * Self refresh modes * 4096 refresh...
Description 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

File Size 466.90K  /  55 Page

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    IS42S16800A IS42S16800A-10T IS42S16800A-10TI IS42S16800A-10TL IS42S16800A-10TLI IS42S16800A-6T IS42S16800A-6TL IS42S1680

ISSI[Integrated Silicon Solution, Inc]
ISSI[Integrated Silicon Solution Inc]
Part No. IS42S16800A IS42S16800A-10T IS42S16800A-10TI IS42S16800A-10TL IS42S16800A-10TLI IS42S16800A-6T IS42S16800A-6TL IS42S16800A-7T IS42S16800A-7TI IS42S16800A-7TL IS42S16800A-7TLI IS42S32400A IS42S32400A-10T IS42S32400A-10TI IS42S32400A-10TL IS42S32400A-10TLI IS42S32400A-6T IS42S32400A-6TL IS42S32400A-7T IS42S32400A-7TI IS42S32400A-7TL IS42S32400A-7TLI IS42S81600A IS42S81600A-10T IS42S81600A-10TI IS42S81600A-10TL IS42S81600A-6T IS42S81600A-6TL IS42S81600A-7T IS42S81600A-7TI IS42S81600A-7TL IS42S81600A-7TLI 42S16800A
OCR Text ...edge * Internal bank for hiding row access/precharge * Power supply IS42S81600A IS42S16800A IS42S32400A * LVTTL interface * Programmable burst length - (1, 2, 4, 8, full page) * Programmable burst sequence: Sequential/Interleave * Auto Refr...
Description 16Meg x 8 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM

File Size 534.78K  /  61 Page

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    IS42S32200 IS42S32200-6T IS42S32200-6TI IS42S32200-7T IS42S32200-7TI 42S32200

ISSI[Integrated Silicon Solution, Inc]
ETC
Part No. IS42S32200 IS42S32200-6T IS42S32200-6TI IS42S32200-7T IS42S32200-7TI 42S32200
OCR Text ...edge * Internal bank for hiding row access/precharge * Single 3.3V power supply * LVTTL interface * Programmable burst length - (1, 2, 4, 8, full page) * Programmable burst sequence: Sequential/Interleave * Self refresh modes * 4096 refresh...
Description 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

File Size 953.57K  /  55 Page

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    K9F5608U0M- K9F5608U0M-YCB0 K9F5608U0M-YIB0

Samsung Electronics Inc
SAMSUNG[Samsung semiconductor]
Part No. K9F5608U0M- K9F5608U0M-YCB0 K9F5608U0M-YIB0
OCR Text ...mum 25ns. 2. Changed Sequential row Read operation - The Sequential Read 1 and 2 operation is allowed only within a block 3. Changed invalid block(s) marking method prior to shipping - The invalid block(s) information is written the 1st or ...
Description From old datasheet system
EEPROM,NAND FLASH,33MX8,CMOS,TSSOP,48PIN,PLASTIC
32M x 8 Bit NAND Flash Memory

File Size 350.10K  /  26 Page

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    K9F5608U0 K9F5608U0A K9F5608U0A-YCB0 K9F5608U0A-YIB0

Samsung Electronic
Samsung semiconductor
Part No. K9F5608U0 K9F5608U0A K9F5608U0A-YCB0 K9F5608U0A-YIB0
OCR Text ...I/O 7 A7 A16 A24 Column Address row Address (Page Address) NOTE : Column Address : Starting Address of the Register. 00h Command(Read) : Defines the starting address of the 1st half of the register. 01h Command(Read) : Defines the starti...
Description 32M x 8 Bit NAND Flash Memory

File Size 607.24K  /  29 Page

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    HMT451V7AFR8C

Hynix Semiconductor
Part No. HMT451V7AFR8C
OCR Text ...8k/64ms 8k/64ms 8k/64ms 8k/64ms row address a0-a15 a0-a15 a0-a15 a0-a15 a0-a15 column address a0-a9 a0-a9, a11 a0-a9 a0-a9, a11 a0-a9 bank address ba0-ba2 ba0-ba2 ba0-ba2 ba0-ba2 ba0-ba2 page size 1kb 1kb 1kb 1kb 1kb free datasheet http://...
Description DDR3 SDRAM VLP

File Size 1,218.01K  /  68 Page

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Part No. MT8VDDT1664AG-403A1
OCR Text ...ss table 128mb refresh count 4k row addressing 4k (a0?a11) device bank addressing 4 (ba0, ba1) device configuration 16 meg x 8 column addressing 1k ( a0?a9) module bank addressing 1 ( s0#) part numbers and timing parameters part number pa...
Description 16M X 64 DDR DRAM MODULE, 0.6 ns, DMA184

File Size 335.96K  /  16 Page

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