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  to-220ab Datasheet PDF File

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    Shenzhen Luguang Electronic Technology Co., Ltd
Shenzhen Luguang Electr...
Part No. to-220ab MBR10H100CT
OCR Text features
Description 10.0AMP. Schottky Barrier Rectifiers
   10.0AMP. Schottky Barrier Rectifiers

File Size 115.35K  /  2 Page

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    TO-262AB TO-263AB TO-200AB VB20120S VB20120S-E3/8W ITO-200AB V20120S12

Vishay Siliconix
Part No. TO-262AB TO-263AB TO-200AB VB20120S VB20120S-E3/8W ITO-200AB V20120S12
OCR Text ..., lf maximum peak of 245 c (for to-263ab package) ? solder bath temperature 275 c maximum, 10 s, per jesd 22-b106 (for to-220ab, ito-220ab, and to-262aa package) ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/e...
Description High-Voltage Trench MOS Barrier Schottky Rectifier

File Size 158.25K  /  5 Page

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    TO-263AB FEP16DT-HE3 ITO-220AB

Vishay Siliconix
Vishay Semiconductors
Part No. TO-263AB FEP16DT-HE3 Ito-220ab
OCR Text ..., lf maximum peak of 245 c (for to-263ab package) ? solder dip 260 c, 40 s (for to-220ab and ito-220ab package) ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec typical applications for use in high frequency rectifier of s...
Description Dual Common-Cathode Ultrafast Plastic Rectifier
Diode Switching 200V 16A 3-Pin(3 Tab) to-220ab

File Size 144.09K  /  5 Page

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    TO-263

Hi-Sincerity Mocroelectronics
Part No. TO-263
OCR Text ...n Tab 2 1 3-Lead Plastic TO-263 Package Code: U Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source This high voltage MOSFET uses an adva...220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source 2 3 1 Features * Robust H...
Description N-Channel Power Field Effect Transistor

File Size 70.68K  /  6 Page

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    VIT4045C

Vishay Siliconix
Part No. VIT4045C
OCR Text ... at IF = 5.0 A FEATURES TMBS to-220ab (R) * Trench MOS Schottky technology TO-262AA * Low forward voltage drop, low power losses * High efficiency operation * Solder dip 275 C max. 10 s, per JESD 22-B106 * Compliant to RoHS Direc...
Description Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

File Size 120.81K  /  5 Page

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    VIT1045C VT1045C

Vishay Siliconix
Part No. VIT1045C VT1045C
OCR Text ... at IF = 2.5 A FEATURES TMBS to-220ab (R) * Trench MOS Schottky technology TO-262AA * Low forward voltage drop, low power losses * High efficiency operation * Solder dip 275 C max. 10 s, per JESD 22-B106 * Compliant to RoHS Direc...
Description Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

File Size 120.69K  /  5 Page

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    PSMN4R5-40PS

NXP Semiconductors N.V.
Part No. PSMN4R5-40PS
OCR Text ...SFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and d...220AB; SC-46) 3. Ordering information Table 3. Ordering information Package Name PSMN4R5-40PS TO...
Description N-channel 40 V 4.6 m惟 standard level MOSFET
N-channel 40 V 4.6 mΩ standard level MOSFET
N-channel 40 V 4.6 m standard level MOSFET

File Size 224.13K  /  13 Page

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    PSMN035-150P

NXP Semiconductors
Part No. PSMN035-150P
OCR Text ...fits Low conduction losses due to low on-state resistance Suitable for high frequency applications due to fast switching characteristics ...220AB) 3. Ordering information Table 3. Ordering information Package Name PSMN035-150P to-220ab ...
Description N-channel TrenchMOS SiliconMAX standard level FET

File Size 210.16K  /  13 Page

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    PJF10N65 PJP10N65

Pan Jit International Inc.
Part No. PJF10N65 PJP10N65
OCR Text ...U RoHs 2002/95/EC Directives to-220ab / Ito-220ab to-220ab Ito-220ab 3S 2 1D G 3S 12D G MECHANICAL DATA * Case: to-220ab / Ito-220ab Molded Plastic * Terminals : Solderable per MIL-STD-750,Method 2026 INTERNAL SCHEMATI...
Description 650V N-Channel Enhancement Mode MOSFET
10 A, 650 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, to-220ab

File Size 230.42K  /  6 Page

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    PJF10N60 PJP10N60

Pan Jit International Inc.
Part No. PJF10N60 PJP10N60
OCR Text ...U RoHs 2002/95/EC Directives to-220ab / Ito-220ab to-220ab Ito-220ab 1 2 G 3 D S 1 2 G 3 S D MECHANICAL DATA * Case: to-220ab / Ito-220ab Molded Plastic * Terminals : Solderable per MIL-STD-750,Method 2026 ...
Description 600V N-Channel Enhancement Mode MOSFET

File Size 180.04K  /  5 Page

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