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    2SA1096 2SA1096A 2SC2497A 2SC2497

PANASONIC[Panasonic Semiconductor]
Part No. 2SA1096 2SA1096A 2SC2497A 2SC2497
OCR Text ...itions VCB = 20 V, IE = 0 VCE = 10 V, IB = 0 VEB = 5 V, IC = 0 IC = 1 mA, IE = 0 IC = 2 mA, IB = 0 70 50 60 80 220 1 1.5 V V MHz pF Min Typ Max 1 100 10 Unit A A A V V Forward current transfer ratio * Collector to emitter saturation volt...
Description    Silicon NPN epitaxial planar type(For low-frequency power amplification)

File Size 68.48K  /  4 Page

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    2SA1103

WINGS[Wing Shing Computer Components]
Part No. 2SA1103
OCR Text ...est Condition IC=-5 mA IE=0 IC=-10 mA RBE= IE=-5mA IC=0 VCB=-60V IE=0 VEB=-4V IC=0 VCE=-5V IC=-1A VCE=-5V IC=-3A IC=-3A IB=-0.3A Min -100 -100 -6 Typ Max Unit V V V mA mA 55 80 -0.1 -0.1 160 -1.5 V Wing Shing Compute...
Description PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)

File Size 47.55K  /  1 Page

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    2SA1106

WINGS[Wing Shing Computer Components]
Part No. 2SA1106
OCR Text ...Tj Tstg Rating -200 -140 -6 -10 100 150 -55~150 Unit V V V A W C C ELECTRICAL CHARACTERISTICS (Ta=25C) C Characterristic Collector Base Breakdown Voltage Collector Emitter Breakdown Voltage Emitter Base Breakdown Voltage Collect...
Description PNP PLANAR TRANSISTOR(AUDIO POWER AMPLIFIER, DC TO DC CONVERTER)

File Size 24.91K  /  1 Page

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    2SA1121 2SA1121SC

HIROSE ELECTRIC Co., Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SA1121 2SA1121SC
OCR Text ...(BR)CBO Min -35 -35 -4 -- -- 60 10 -- D SD 160 to 320 Typ -- -- -- -- -0.2 -- -- -0.64 Max -- -- -- -0.5 -0.6 320 -- -- V Unit V V V A V Tes...100 to 200 VBE 1. The 2SA1121 is grouped by h FE as follows. See characteristic curves of 2SA6...
Description TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 500MA I(C) | SOT-23 晶体管|晶体管|进步党| 35V的五(巴西)总裁| 500mA的一(c)| SOT - 23封装
Silicon PNP Epitaxial
Silicon PNP Transistor

File Size 23.33K  /  5 Page

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    2SA1122

HITACHI[Hitachi Semiconductor]
Part No. 2SA1122
OCR Text ...V A A Test conditions I C = -10 A, IE = 0 I C = -1 mA, RBE = I E = -10 A, IC = 0 VCB = -30 V, IE = 0 VEB = -2 V, IC = 0 VCE = -12 V, IC ...100 50 0 50 100 150 Ambient Temperature Ta (C) 3 Unit: mm 0.65 0.10 3 - 0.4 + 0...
Description Silicon PNP Transistor
Silicon PNP Epitaxial

File Size 23.23K  /  5 Page

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    2SA1123 2SC2631

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PANASONIC[Panasonic Semiconductor]
Part No. 2SA1123 2SC2631
OCR Text ...50 750 150 -55 ~ +150 Unit 5.10.2 s Features s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter v...100 25C Ta=75C -80 2SA1123 IC -- VCE -120 VCE=-5V IC -- VBE Collector power dissipation P...
Description Silicon PNP epitaxial planer type

File Size 35.58K  /  2 Page

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    2SA1124

PANASONIC[Panasonic Semiconductor]
Part No. 2SA1124
OCR Text ...IC (mA) -60 -50 -40 -30 -20 -10 0.8 0.6 IB=-500A -450A -400A -350A -300A -250A -200A -150A -100A Collector current IC (mA) ...100 120 140 160 0 0 -2 -4 -6 -8 -10 -12 0 0 - 0.4 - 0.8 -1.2 -1.6 -2.0 Ambient temperature ...
Description Silicon PNP epitaxial planer type

File Size 35.68K  /  2 Page

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    2SA1127

Panasonic Semiconductor
Part No. 2SA1127
OCR Text ... V mA mA mW C C 13.50.5 5.10.2 s Features 0.45 -0.1 1.27 +0.2 0.45 -0.1 1.27 +0.2 123 2.30.2 2.540.15 1:Em...100 -1 Unit nA A V V V -60 -55 -7 180 700 - 0.6 -1 200 150 VCE(sat) VBE fT NV V V MHz mV...
Description Silicon PNP epitaxial planer type

File Size 36.10K  /  2 Page

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    2SA1128

PANASONIC[Panasonic Semiconductor]
Part No. 2SA1128
OCR Text ... V V A A mW C C 13.50.5 5.10.2 s Features 0.45 -0.1 1.27 +0.2 0.45 -0.1 1.27 +0.2 123 2.30.2 2.540.15 1:Em...100 -1 Unit nA A V V V -25 -20 -7 90 25 - 0.4 -1.2 150 15 *2 220 V V MHz 25 pF ...
Description Silicon PNP epitaxial planer type

File Size 35.79K  /  2 Page

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    2SA1171

HITACHI[Hitachi Semiconductor]
Part No. 2SA1171
OCR Text ... VCE = -12 V, IC = -2 mA I C = -10 mA, IB = -1 mA VCE = -12 V, IC = -2 mA VCB = -25 V, IE = 0, f = 1 MHz 1. The 2SA1171 is grouped by hFE...100 50 0 50 100 150 Ambient Temperature Ta (C) 3 Unit: mm 0.65 0.10 3 - 0.4 + 0...
Description Silicon PNP Epitaxial

File Size 23.17K  /  5 Page

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