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BZS55B11 M3882 2SA1739 307014 ISL6128 MC12066D 300SJTS 6417709S
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    2SA1121 2SA1121SC

HIROSE ELECTRIC Co., Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SA1121 2SA1121SC
OCR Text ...E = I E = -10 A, IC = 0 VCB = -20 V, IE = 0 I C = -150 mA, IB = -15 mA VCE = -3 V, IC = -10 mA VCE = -3 V, IC = -500 mA (Pulse test) VCE = -3 V, IC = -10 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown volta...
Description TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 500MA I(C) | SOT-23 晶体管|晶体管|进步党| 35V的五(巴西)总裁| 500mA的一(c)| SOT - 23封装
Silicon PNP Epitaxial
Silicon PNP Transistor

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    2SA1123 2SC2631

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PANASONIC[Panasonic Semiconductor]
Part No. 2SA1123 2SC2631
OCR Text ...m for the pre-driver stage of a 20 to 40W output amplifier. (Ta=25C) Ratings -150 -150 -5 -100 -50 750 150 -55 ~ +150 Unit 5.10.2 s F...0.45 -0.1 1.27 +0.2 0.45 -0.1 1.27 +0.2 V V 123 2.30.2 V 2.540.15 mA mA ...
Description Silicon PNP epitaxial planer type

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    2SA1124

PANASONIC[Panasonic Semiconductor]
Part No. 2SA1124
OCR Text ...ent IC (mA) -60 -50 -40 -30 -20 -10 0.8 0.6 IB=-500A -450A -400A -350A -300A -250A -200A -150A -100A Collector current IC (mA) -25C -60 0.4 -40 0.2 -50A -20 0 0 20 40 60 80 100 120 140 160 0 0 -2 -4...
Description Silicon PNP epitaxial planer type

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    2SA1127

Panasonic Semiconductor
Part No. 2SA1127
OCR Text ...ent IC (mA) -60 -50 -40 -30 -20 350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 -180A -160A -140A -120A -100A -80A -60A -40A Collector current IC (mA) 400 IB=-200A -25C -60 -40 -20 -10 0 0 -2 -4 -6 -...
Description Silicon PNP epitaxial planer type

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    2SA1128

PANASONIC[Panasonic Semiconductor]
Part No. 2SA1128
OCR Text ... Tstg (Ta=25C) Ratings -25 -20 -7 -1 - 0.5 600 150 -55 ~ +150 Unit V V V A A mW C C 13.50.5 5.10.2 s Features 0.45 -0.1 1.27 +0.2 0.45 -0.1 1.27 +0.2 123 2.30.2 2.540.15 1:Emitter 2:Collector 3:Base JED...
Description Silicon PNP epitaxial planer type

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    2SA1190 2SA1191

HITACHI[Hitachi Semiconductor]
Part No. 2SA1190 2SA1191
OCR Text ...cal Output Characteristics (1) -20 -3 0 -16 PC -2 mW 00 =4 5 -20 400 -12 -15 -8 -10 -5 A 200 -4 IB = 0 0 50 100 150 Ambient Temperature Ta (C) 0 -20 -40 -60 -80 -100 Collector to Emitter Voltage VCE (V)...
Description Silicon PNP Epitaxial

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    2SA1193 2SA1193K

HITACHI[Hitachi Semiconductor]
Part No. 2SA1193 2SA1193K
OCR Text ...400 -40 -300 P C = -20 0. 9W -200 -10 -100 -5 A IB = 0 0 -2 -4 -6 -8 -10 Collector to Emitter Voltage VCE (V) 3 2SA1193(K) Saturation Voltage vs. Collector Current Collector to emitter saturation voltage VCE(sat) ...
Description Silicon PNP Epitaxial/ Darlington
Silicon PNP Epitaxial, Darlington

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    2SA2004

PANASONIC[Panasonic Semiconductor]
Part No. 2SA2004
OCR Text ...3 4.60.2 2.90.2 13.70.2 4.20.2 Solder Dip * High forward current transfer ratio hFE * Satisfactory linearity of forward current tra...0.80.1 3.00.5 2.60.1 I Absolute Maximum Ratings TC = 25C Parameter Collector to base volta...
Description    Silicon PNP epitaxial planer type

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    2SA2009

PANASONIC[Panasonic Semiconductor]
Part No. 2SA2009
OCR Text ...250.10 2.10.1 5 1 2 0.20.1 (0.65) (0.65) I Absolute Maximum Ratings Ta = 25C Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power ...
Description    Silicon PNP epitaxial planer type

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    2SA2010

PANASONIC[Panasonic Semiconductor]
Part No. 2SA2010
OCR Text ... (0.95) (0.95) 1.90.1 2.90+0.20 -0.05 10 1.1+0.2 -0.1 (0.65) I Absolute Maximum Ratings Ta = 25C Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current ...
Description    Silicon PNP epitaxial planer type

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