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  52.0v. Datasheet PDF File

For 52.0v. Found Datasheets File :: 369    Search Time::1.578ms    
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    AOTF18N65

Alpha & Omega Semiconductors
Part No. AOTF18N65
OCR Text ...totalgatecharge v gs =10v,v ds =520v,i d =18a dynamic parameters v ds =5v, i d =250 m a v ds =520v,t j =125c v ds =0v,v gs =30v v drainsourcebreakdownvoltage i d =250a,v gs =0v,t j =25c i d =250a,v gs =0v,t j =150c zerogatevoltagedraincurr...
Description 650V,18A N-Channel MOSFET

File Size 356.80K  /  5 Page

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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AOTF18N65
OCR Text ...totalgatecharge v gs =10v,v ds =520v,i d =18a dynamic parameters v ds =5v, i d =250 m a v ds =520v,t j =125c v ds =0v,v gs =30v v drainsourcebreakdownvoltage i d =250a,v gs =0v,t j =25c i d =250a,v gs =0v,t j =150c zerogatevoltagedraincurr...
Description 650V,18A N-Channel MOSFET

File Size 417.76K  /  5 Page

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    AOK18N65

Alpha & Omega Semiconductors
Part No. AOK18N65
OCR Text ...v ds =5v, i d =250 m a v ds =520v, t j =125c v ds =0v, v gs =30v v drain-source breakdown voltage i d =250 a, v gs =0v, t j =25c i d =250 a, v gs =0v, t j =150c zero gate voltage drain current id=250 a, vgs=0v maximum body-diode pul...
Description 650V,18A N-Channel MOSFET

File Size 444.47K  /  5 Page

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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AOK18N65
OCR Text ...v ds =5v, i d =250 m a v ds =520v, t j =125c v ds =0v, v gs =30v v drain-source breakdown voltage i d =250 a, v gs =0v, t j =25c i d =250 a, v gs =0v, t j =150c zero gate voltage drain current id=250 a, vgs=0v maximum body-diode pul...
Description 650V,18A N-Channel MOSFET

File Size 530.72K  /  5 Page

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    AOWF10N65 AOW10N65

Alpha & Omega Semiconductors
Part No. AOWF10N65 AOW10N65
OCR Text ...al gate charge v gs =10v, v ds =520v, i d =10a gate source charge gate drain charge switching parameters i dss zero gate voltage drain current v ds =650v, v gs =0v diode forward voltage v ds =5v i d =250 m a v ds =520v, t j =125c i s =1a...
Description 650V,10A N-Channel MOSFET

File Size 338.79K  /  6 Page

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    IRFB9N65A IRFB9N65

IRF[International Rectifier]
Part No. IRFB9N65A IRFB9N65
OCR Text ...DS = 650V, VGS = 0V A 250 VDS = 520V, VGS = 0V, TJ = 125C 100 VGS = 30V nA -100 VGS = -30V Max. Units Conditions --- S VDS = 50V, ID = 3.1A 48 ID = 5.2A 12 nC VDS = 400V 19 VGS = 10V, See Fig. 6 and 13 --- VDD = 325V --- ID = 5.2A ns --- R...
Description Power MOSFET(Vdss=650V/ Rds(on)max=0.93ohm/ Id=8.5A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=650V, Rds(on)max=0.93ohm, Id=8.5A)

File Size 98.70K  /  8 Page

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    IRFB9N65APBF

International Rectifier
Part No. IRFB9N65APBF
OCR Text ...??? 48 ??? v gs = 0v, v ds = 520v, ? = 1.0mhz c oss eff. effective output capacitance ??? 84 ??? v gs = 0v, v ds = 0v to 520v dynamic @ t j = 25c (unless otherwise specified) ns parameter typ. max. units e as single pulse avalan...
Description HEXFET Power MOSFET

File Size 153.63K  /  8 Page

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    Xian Semipower Electronic Technology Co., Ltd.
Part No. SWF7N65
OCR Text ... =650v, v gs =0v - - 1 ua v ds =520v, t c =125 o c - - 20 ua i gss gate to source leakage current, forward v gs =30v, v ds =0v - - 100 na v gs = - 30v, v ds =0v - - - 100 na gate to source leakage current, reverse on characteristics v gs(th...
Description N-channel MOSFET

File Size 771.85K  /  7 Page

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    IRFIB5N65 IRFIB5N65A

International Rectifier
Part No. IRFIB5N65 IRFIB5N65A
OCR Text ...CCC 48 CCC v gs = 0v, v ds = 520v, ? = 1.0mhz c oss eff. effective output capacitance CCC 84 CCC v gs = 0v, v ds = 0v to 520v ? dynamic @ t j = 25c (unless otherwise specified) ns parameter typ. max. units e as single pulse avalanc...
Description 650V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=650V/ Rds(on)max=0.93ohm/ Id=5.1A)

File Size 108.28K  /  8 Page

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    IRFB9N65 IRFB9N65A

International Rectifier
Part No. IRFB9N65 IRFB9N65A
OCR Text ...DS = 650V, VGS = 0V A 250 VDS = 520V, VGS = 0V, TJ = 125C 100 VGS = 30V nA -100 VGS = -30V Max. Units Conditions --- S VDS = 50V, ID = 3.1A 48 ID = 5.2A 12 nC VDS = 400V 19 VGS = 10V, See Fig. 6 and 13 --- VDD = 325V --- ID = 5.2A ns --- R...
Description Power MOSFET(Vdss=650V/ Rds(on)max=0.93ohm/ Id=8.5A)
650V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 107.63K  /  8 Page

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For 52.0v. Found Datasheets File :: 369    Search Time::1.578ms    
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