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Micron Technology, Inc.
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| Part No. |
MT46V16M8TG-8 MT46V16M8TG-75ZL MT46V16M8TG-75L MT46V32M4TG-75L MT46V8M16TG-8L MT46V32M4TG-75ZL MT46V32M4TG-8L MT46V8M16TG-75L MT46V16M8TG-8L
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| OCR Text |
...hz 133 mhz 2.5ns 0.75ns +0.5ns -8 100 mhz 125 mhz 3.4ns 0.8ns +0.6ns *minimum clock rate @ cl = 2 (-75z and -8) and cl = 2.5 (-75) **cl = ca...bits. it is internally configured as a quad- bank dram. the 128mb ddr sdram uses a double data rate ... |
| Description |
DOUBLE DATA RATE DDR SDRAM
DC-DC Converter; Supply Voltage:75V; Output Voltage:3.3V; Number of Outputs:1; Power Rating:33W; Mounting Type:PC Board; Series:EXB50; Efficiency:90%; Leaded Process Compatible:Yes; Output Current:10A RoHS Compliant: Yes
DC-DC Converter; Supply Voltage:75V; Output Voltage:5V; Number of Outputs:1; Power Rating:50W; Mounting Type:PC Board; Series:EXB50; Efficiency:91%; Leaded Process Compatible:Yes; Output Current:10A RoHS Compliant: Yes
DC-DC Converter; Output Voltage:3.3V; Number of Outputs:1; Power Rating:26.4W; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Supply Voltage Max:75V; Supply Voltage Min:36V RoHS Compliant: No
8 BIT MCU, 7.5K FLASH
P/S, DC-DC, -48V TO 5V/3.3V 60W 1/4 BRICK
PS, 100W, 48-TO-12 VDC, 2%, NEG EN, 1/4 BRICK 双倍数据速率的DDR SDRAM内存
DOUBLE DATA RATE DDR SDRAM 双倍数据速率的DDR SDRAM内存
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| File Size |
2,530.36K /
68 Page |
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Toshiba, Corp.
SIEMENS AG
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| Part No. |
HYB39S256800CT-8 HYB39S256400CT-7.5 HYB39S256800CT-7.5 HYB39S256160CT-7.5
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| OCR Text |
...ammable burst length: 1, 2, 4, 8 full page burst length for sequential wrap around -7.5 -8 units fck 133 125 mhz tck3 7.5 8 ns tac3 5....bits) 32m x8 sdram can = ca9 (page length = 1024 bits) 16m x16 sdram can = ca8 (page length = 512 bi... |
| Description |
256Mb (64M x 4) PC133 3-3-3
256Mb (32M x 8) PC133 3-3-3
256Mb (32M x 8) PC100 2-2-2 56Mb的（32M的8）PC100-2-2
x16 SDRAM x16内存
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| File Size |
315.34K /
50 Page |
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Alliance Semiconductor ...
ALSC[Alliance Semiconductor Corporation]
Alliance Semiconductor, Corp.
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| Part No. |
AS7C3256A-8 AS7C3256A-8TCN AS7C3256A-8JC AS7C3256A-8JCN AS7C3256A-8TC
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| OCR Text |
8
(R)
3.3V 32K X 8 CMOS SRAM (Common I/O) Features
* Organization: 32,768 words x 8 bits * High speed - 8 ns address access time - 5 ns output enable access time * Very low power consumption: ACTIVE - 216mW max @ 8 ns * Very low power ... |
| Description |
SRAM - 3.3V Fast Asynchronous
3.3V 32K X 8 CMOS SRAM (Common I/O) 32K X 8 STANDARD SRAM, 8 ns, PDSO28
Dual 4-Input Positive-AND Gate 14-SSOP -40 to 85 32K X 8 STANDARD SRAM, 8 ns, PDSO28
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| File Size |
285.49K /
9 Page |
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OKI[OKI electronic componets]
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| Part No. |
MS82V32520-8 MS82V32520 MS82V32520-10 MS82V32520-75
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| OCR Text |
...rammable burst length (1, 2, 4, 8 and full page) Programmable CAS latency (2, 3) Automatic row address increment function and automatic bank switching function Power Down operation and Clock Suspend operation 4,096 refresh cycles/64 ms Auto... |
| Description |
524,288-Word 】 32-Bit 】 2-Bank FIFO-SGRAM
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| File Size |
1,164.60K /
42 Page |
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Price and Availability
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