|
|
 |
GSI Technology, Inc.
|
Part No. |
GS8161V18CD-300I GS8161V36CGD-250 GS8161V18CGD-333I
|
OCR Text |
...egradation of chip performance. flow through/pipeline reads the function of the data output register can be controlled by the user via the ft mode pin (pin 14). holding the ft mode pin low places the ram in flow through mode, causing ou... |
Description |
1M x 18 and 512K x 36 18Mb Sync Burst SRAMs 1M X 18 CACHE SRAM, 5 ns, PBGA165 1M x 18 and 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 5.5 ns, PBGA165 1M x 18 and 512K x 36 18Mb Sync Burst SRAMs 1M X 18 CACHE SRAM, 4.5 ns, PBGA165
|
File Size |
577.93K /
28 Page |
View
it Online |
Download Datasheet
|
|
|
 |
IDT
|
Part No. |
IDT71V3579 71V3577_DS_76213
|
OCR Text |
flow-through Outputs Burst Counter, Single Cycle Deselect Features
x x
IDT71V3577 IDT71V3579
Description
The IDT71V3577/79 are high-speed SRAMs organized as 128K x 36/256K x 18. The IDT71V3577/79 SRAMs contain write, data, address a... |
Description |
128K X 36, 256K X 18 3.3V Synchronous SRAMs 3.3V I/O, flow-through Outputs Burst Counter, Single Cycle Deselect From old datasheet system
|
File Size |
516.17K /
23 Page |
View
it Online |
Download Datasheet
|
|
|
 |
E-Lab
|
Part No. |
EDE12400
|
OCR Text |
...ted voltage to increase current flow. Doing so leads to a problem, however, in that at lower speeds an overcurrent situation develops and th...through internal 0.5 Ohm power resistors and then flows to ground. By measuring the voltage across t... |
Description |
BI-POLAR CHOPPER STEPPER MOTOR CONTROL MODULE
|
File Size |
617.14K /
8 Page |
View
it Online |
Download Datasheet
|
|
|
 |
E-Lab
|
Part No. |
EDE1400
|
OCR Text |
...In +5V +5V GND D0 D1 D2 D3 BUSY Flow OSC1 OSC2 +5V D7 D6 D5 D4 18 17 16 15 14 13 12 11 10
Printer BUSY Line Hardware Handshaking (PC Only...through a RS232 to TTL voltage-level converter such as the MAX232. Ordinarily the "Flow" pin (Pin 17... |
Description |
Parallel-Printer Interface IC
|
File Size |
175.93K /
7 Page |
View
it Online |
Download Datasheet
|
|
|
 |
|
Part No. |
KM736V747T-10
|
OCR Text |
flow-through n t ram tm - 1 - rev 4.0 july 1999 km718v847 document title 128kx36 & 256kx18-bit flow through n t ram tm the attached data sheets are prepared and approved by samsung electronics. samsung electronics co., ltd. reserve the rig... |
Description |
128K X 36 ZBT SRAM, 10 ns, PQFP100
|
File Size |
386.96K /
17 Page |
View
it Online |
Download Datasheet
|
|
|
 |
IDT
|
Part No. |
IDT71T75902 71T75702_DS_59004 IDT71T75902S80PF IDT71T75902S80PFI
|
OCR Text |
flow-through Outputs
x x x x x x x x x x x x x
IDT71T75702 IDT71T75902
Features
512K x 36, 1M x 18 memory configurations Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ZBTTM Feature - No dead cycles b... |
Description |
2.5V 1M x 18 ZBT Synchronous 2.5V I/O flow-through SRAM From old datasheet system 512K x 36, 1M x 18 2.5V Synchronous ZBT? SRAMs 2.5V I/O, Burst Counter flow-through Outputs
|
File Size |
386.84K /
26 Page |
View
it Online |
Download Datasheet
|
|
|
 |
GSI Technology, Inc.
|
Part No. |
GS8160E18BGT-150 GS8160E32BGT-150I GS8160E32BT-150 GS8160E32BGT-200I GS8160E36BGT-250 GS8160E18BT-200T
|
OCR Text |
... ft pin for user-configurable flow through or pipeline opera - tion ? dual cycle deselect (dcd) operation ? 2.5 v or 3.3 v +10%/?10% core power supply ? 2.5 v or 3.3 v i/o supply ? lbo pin for linear or interleaved burst mode ? internal... |
Description |
1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 1M X 18 CACHE SRAM, 7.5 ns, PQFP100 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 512K X 32 CACHE SRAM, 7.5 ns, PQFP100 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 512K X 32 CACHE SRAM, 6.5 ns, PQFP100 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 5.5 ns, PQFP100 1M X 18 CACHE SRAM, 6.5 ns, PQFP100
|
File Size |
464.16K /
23 Page |
View
it Online |
Download Datasheet
|
|

Price and Availability
|