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ST Microelectronics
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| Part No. |
STY60NM60
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| OCR Text |
...ABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL INDUSTRY'S LOWEST ON-RESISTANCE
2 1
3
Max247
DESCRIPTION The MDmeshTM is a new revolutionary MOSFET technology... |
| Description |
N-CHANNEL 600V 0.50 OHM 60A MAX247 ZENER-PROTECTED MDMESH POWER MOSFET
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| File Size |
114.03K /
6 Page |
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飞思卡尔半导体(中国)有限公司
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| Part No. |
MPC17510EJ/R2 MPC17510MTBEL
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| OCR Text |
...ciently with supply voltages as low as 2.0 V to as high as 15 V. Its low RDS(ON) H-Bridge output MOSFETs (0.45 typical) can provide continu...charge pump and level shifter (for gate drive voltages), integrated shoot-through current protection... |
| Description |
1.2 A 15 V H-Bridge Motor Driver IC
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| File Size |
161.40K /
14 Page |
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Fujitsu Microelectronics
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| Part No. |
MB15F03L
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| OCR Text |
... a supply current is limited as low as 5.0mA typ. at a supply voltage of 3.0V. Furthermore, a super charger circuit is included to provide a...charge pump circuit and phase comparator, achieving high-speed lock-up and low phase noise * On-chip... |
| Description |
Dual Serial Input PLL FrequencySynthesizer
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| File Size |
132.42K /
24 Page |
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it Online |
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MAXIM INTEGRATED PRODUCTS INC
Maxim Integrated Products, Inc.
MAXIM - Dallas Semiconductor
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| Part No. |
MAX4760-MAX4761 MAX4760EBX-T MAX4760ETX MAX4761EBX-T MAX4761ETX
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| OCR Text |
...upply. These switches feature a low 25pF capacitance for high-speed data switching applications. The MAX4760 is a quad double-pole/double-th...Charge Injection On-Channel -3dB Bandwidth Off-Isolation (Note 8) Crosstalk (Note 9) Total Harmonic ... |
| Description |
Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Metal; Series:GT; No. of Contacts:3; Connector Shell Size:14; Connecting Termination:Crimp; Body Style:Straight; Circular Contact Gender:Pin; Gender:Female
3.3V CAN Transceiver with Standby Mode, Loop-back 8-SOIC -40 to 125
High-Bandwidth, Quad DPDT Switches
High-Bandwidth / Quad DPDT Switches
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| File Size |
699.75K /
14 Page |
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it Online |
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SGS Thomson Microelectronics
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| Part No. |
AN244
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| OCR Text |
...sesolutionsarecharacterizedby a low efficiency of the power transistor. For this reason it is generally necessary to operate at frequenAN244...charge current. The current ripple is given by the following formula : (Vi - Vsat) - V IL+ = IL- = T... |
| Description |
DESIGNING WITH THE L296 MONOLITHIC POWER SWITCHING REGULATOR
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| File Size |
522.06K /
43 Page |
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SGS Thomson Microelectronics
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| Part No. |
AN473
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| OCR Text |
...lso improves the simulation for low values of VDS. When the drain-gate voltage is negative the CGD capacitance is modelled disabling this le...charge (Qo + Qss) Channel length Channel doping (peak) Epy layer doping Epy layer width Cs deep body... |
| Description |
A NEW APPROACH TO PARAMETER EXTRACTION FOR THE SPICE POWER MOSFET MODEL
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| File Size |
42.97K /
7 Page |
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