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  mos-fets Datasheet PDF File

For mos-fets Found Datasheets File :: 1204    Search Time::3.719ms    
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    Matsshita / Panasonic
Part No. 2SK3048
OCR Text MOS FETs 2SK3048 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown unit: mm 9.90.3 4.60.2 2.90.2 s Applications q Contactless ...
Description Power F-MOS FETs

File Size 53.72K  /  4 Page

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    Matsshita / Panasonic
Part No. 2SK3047
OCR Text MOS FETs 2SK3047 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 15mJ q VGSS = 30V guaranteed q High-speed switching: tf = 25ns q No secondary breakdown unit: mm 9.90.3 4.60.2 2.90.2 s A...
Description Power F-MOS FETs

File Size 52.56K  /  4 Page

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    Matsshita / Panasonic
Part No. 2SK3046
OCR Text MOS FETs 2SK3046 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 130mJ q VGSS = 30V guaranteed q High-speed switching: tf = 60ns q No secondary breakdown unit: mm 9.90.3 4.60.2 2.90.2 s ...
Description Power F-MOS FETs

File Size 53.84K  /  4 Page

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    UPD16808 UPD16808GS

NEC[NEC]
Part No. UPD16808 UPD16808GS
OCR Text MOS INTEGRATED CIRCUIT PD16808 MONOLITHIC DUAL H BRIDGE DRIVER CIRCUIT DESCRIPTION The PD16808 is a monolithic dual H bridge driver circuit which employing N-channel power MOS FETs for its driver stage. By using the power MOS FETs f...
Description MONOLITHIC DUAL H BRIDGE DRIVER CIRCUIT

File Size 91.95K  /  12 Page

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    Matsshita / Panasonic
Part No. 2SK3045
OCR Text MOS FETs 2SK3045 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 15.6mJ q VGSS = 30V guaranteed q High-speed switching: tf = 35ns q No secondary breakdown unit: mm 9.90.3 4.60.2 2.90.2 s...
Description Power F-MOS FETs

File Size 53.69K  /  4 Page

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    Panasonic
Part No. 2SK3044
OCR Text mos fets unit: mm 2sk3044 silicon n-channel power f-mos fet features avalanche energy capacity guaranteed: eas > 130mj v gss = 30v guaranteed high-speed switching: t f = 50ns no secondary breakdown applications contactless r...
Description Power Device - Power MOS FETs

File Size 82.71K  /  4 Page

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    Guilin Strong Micro-Electronics Co., Ltd.
Part No. GM7002
OCR Text ...hancement-mode enhancement-mode mos mos mos mos fets fets fets fets n n n n ? mos mos mos mos ? maximum maximum maximum maximum ratings ratings ratings ratings ~? thermal thermal thermal thermal characteristics characteristics characteris...
Description N-Channel Enhancement-Mode MOS FETs

File Size 267.65K  /  3 Page

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    UPD16833A UPD16833AG3

NEC[NEC]
Part No. UPD16833A UPD16833AG3
OCR Text MOS INTEGRATED CIRCUIT PD16833A MONOLITHIC QUAD H BRIDGE DRIVER CIRCUIT DESCRIPTION The PD16833A is a monolithic quad H bridge driver IC which uses power MOS FETs in its driver stage. By using the MOS FETs in the output stage, this ...
Description MONOLITHIC QUAD H BRIDGE DRIVER CIRCUIT

File Size 86.24K  /  12 Page

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    Matsshita / Panasonic
Part No. 2SK3044
OCR Text MOS FETs 2SK3044 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 130mJ q VGSS = 30V guaranteed q High-speed switching: tf = 50ns q No secondary breakdown unit: mm 9.90.3 4.60.2 2.90.2 s ...
Description Power F-MOS FETs

File Size 53.55K  /  4 Page

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    UPD16837 UPD16837GS

NEC[NEC]
Part No. UPD16837 UPD16837GS
OCR Text MOS INTEGRATED CIRCUIT PD16837 MONOLITHIC QUAD H BRIDGE DRIVER DESCRIPTION The PD16837 is a monolithic quad H bridge driver employing power MOS FETs in the output stage. The MOS FETs in the output stage lower the saturation voltage ...
Description MONOLITHIC QUAD H BRIDGE DRIVER

File Size 105.26K  /  16 Page

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