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  pc66 Datasheet PDF File

For pc66 Found Datasheets File :: 86    Search Time::2.359ms    
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    HYB39S256800T-8B HYB39S256400T-8B HYB39S256800T-10

Siemens Semiconductor Group
SIEMENS AG
Part No. HYB39S256800T-8B HYB39S256400T-8B HYB39S256800T-10
OCR Text ...00 3-2-3 operation -10 part for pc66 2-2-2 operation hyb 39s256400/800/160t hyb 39s256400/800/160t 256 mbit synchronous dram semiconductor group 2 1998-10-01 ordering information type ordering code package description lvt...
Description 256 MBit Synchronous DRAM 32M X 8 SYNCHRONOUS DRAM, 7 ns, PDSO54
256 MBit Synchronous DRAM 32M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54

File Size 286.90K  /  56 Page

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    HYB39S64160AT HYB39S64160AT-8B HYB39S64160AT-10 HYB39S64400AT-10 HYB39S64400AT-8B

Siemens Semiconductor Group
Part No. HYB39S64160AT HYB39S64160AT-8B HYB39S64160AT-10 HYB39S64400AT-10 HYB39S64400AT-8B
OCR Text ...54-2 (400mil) 4b x 4m x 4 sdram pc66-222 hyb 39s64800at-8 p-tsop-54-2 (400mil) 4b x 2m x 8 sdram pc100-222 hyb 39s64800at-8b p-tsop-54-2 (400mil) 4b x 2m x 8 sdram pc100-323 hyb 39s64800at-10 p-tsop-54-2 (400mil) 4b x 2m x 8 sdram pc66-222 ...
Description 64 MBit Synchronous DRAM

File Size 685.60K  /  53 Page

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    KMM466S823DT3

Samsung Semiconductor
Part No. KMM466S823DT3
OCR Text pc66 sodimm kmm466s823dt3 rev. 0.1 july 1999 revision history revision 0.0 (july 5, 1999) ? changed trdl from 1clk to 2clk in operating ac parameter. ? skip icc4 value of cl=2 in dc characteristics in datasheet. ? define a new paramete...
Description pc66 SODIMM

File Size 134.29K  /  10 Page

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    M366S0823DTF

Samsung Semiconductor
Part No. M366S0823DTF
OCR Text pc66 unbuffered dimm rev. 0.0 jun. 1999 the samsung m366s0823dtf is a 8m bit x 64 synchronous dynamic ram high density memory module. the samsung m366s0823dtf consists of eight cmos 8m x 8 bit with 4banks synchronous drams in tsop-ii 400m...
Description SDRAM DIMM

File Size 120.12K  /  9 Page

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    M366S0823CTL

Samsung Semiconductor
Part No. M366S0823CTL
OCR Text pc66 unbuffered dimm the samsung m366s0823ctl is a 8m bit x 64 synchronous dynamic ram high density memory module. the samsung m366s0823ctl consists of eight cmos 8m x 8 bit with 4banks synchronous drams in tsop-ii 400mil package and a 2k...
Description SDRAM DIMM

File Size 120.16K  /  9 Page

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    HYB39S16400AT-10 HYB39S16400AT-8 Q67100-Q1333 Q67100-Q1331 Q67100-Q1323 HYB39S16800AT-10 HYB39S16160AT-10 Q67100-Q1327 Q

Siemens Semiconductor Group
SIEMENS AG
Part No. HYB39S16400AT-10 HYB39S16400AT-8 Q67100-Q1333 Q67100-Q1331 Q67100-Q1323 HYB39S16800AT-10 HYB39S16160AT-10 Q67100-Q1327 Q67100-Q1337 SIEMENSAG-Q67100-Q1327
OCR Text ...mil) 125 MHz 2B x 2 M x 4 SDRAM pc66 2-2-2 HYB 39S16400AT-10 Q67100-Q1323 P-TSOPII-44-1 (400 mil) 100 MHz 2B x 2 M x 4 SDRAM pc66 2-2-2 HYB 39S16800AT-8 Q67100-Q1335 P-TSOPII-44-1 (400 mil) 125 MHz 2B x 1 M x 8 SDRAM pc66 2-2-2 HYB 39S16800...
Description 16 MBit Synchronous DRAM 4M X 4 SYNCHRONOUS DRAM, 8 ns, PDSO44
16 MBit Synchronous DRAM 2M X 8 SYNCHRONOUS DRAM, 10 ns, PDSO44
Multipole Connector 1M X 16 SYNCHRONOUS DRAM, 10 ns, PDSO50
DB25PH 16兆位同步DRAM
16 MBit Synchronous DRAM 16兆位同步DRAM

File Size 150.03K  /  22 Page

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    SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. HYS72V4120GU-10 HYS64V4120GU HYS64V4120GU-10
OCR Text ...arity or ECC applications Fully pc66 layout compatible JEDEC standard Synchronous DRAMs (SDRAM) Performance: -10 fCK tAC Max. Clock frequency Max. access time from clock 66 MHz @ CL=2 100 MHz @ CL=3 9 ns @ CL=2 8 ns @ CL=3 * * * * * ...
Description 3.3V 4M x 64-Bit 2 BANK SDRAM Module 3.3V 4M x 72-Bit 2 BANK SDRAM Module

File Size 71.97K  /  11 Page

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    Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. KMM366S403CTL-G0 KMM366S403CTL
OCR Text pc66 SDRAM MODULE *Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : 5uA to 1uA. - Input leakage currents (I/O) : 5uA to 1.5uA. - Cin to be measured at VDD = 3.3V, TA = 23C,...
Description pc66 SDRAM MODULE

File Size 161.87K  /  11 Page

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