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  rg u Datasheet PDF File

For rg u Found Datasheets File :: 15377    Search Time::6.344ms    
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    List of Unclassifed Man...
Part No. rg-58u
OCR Text rg-174/u type ?26 awg stranded (7x34) .019 bare copper-covered steel conductor ?tinned copper braid shield (90% coverage) polyethylene insulation ?black pvc jacket ul awm 8216
Description    50 Ohm Transmission and Computer Cable

File Size 234.09K  /  5 Page

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    Samsung Semiconductor Co., Ltd.
Omron Electronics, LLC
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4M56163PE-rg K4M56163PE-R K4M56163PE-F90 K4M56163PE-F1L K4M56163PE-BF1L0 K4M56163PE-rg1L0 K4M56163PE-BF900
OCR Text ...Timing Register CS RAS CAS WE L(u)DQM February 2004 K4M56163PE - R(B)G/F Package Dimension and Pin Configuration < Bottom View*1 > E1 9 A B C D D1 E F G H J E E/2 Pin Name CLK D/2 e A B C D E F G H J 8 7 6 5 4 3 2 1 1 VSS DQ14 DQ12 ...
Description 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 4米16 × 4银行4FBGA移动SDRAM
16M X 16 SYNCHRONOuS DRAM, 7 ns, PBGA54 0.80 MM PITCH, CSP-54
16M X 16 SYNCHRONOuS DRAM, 7 ns, PBGA54 0.80 MM PITCH, LEAD FREE, CSP-54

File Size 110.29K  /  12 Page

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    Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K4M64163PH-rg K4M64163PH K4M64163PH-RBF1L K4M64163PH-RBF75 K4M64163PH-RBF90 K4M64163PH-RF1L K4M64163PH-RF75 K4M64163PH-RF90
OCR Text ...Timing Register CS RAS CAS WE L(u)DQM 2 December 2003 K4M64163PH - R(B)G/F Package Dimension and Pin Configuration < Bottom View*1 > E1 9 A B C D1 D E F G H J E E/2 Pin Name CLK D/2 D e A B C D E F G H J 8 7 6 5 4 3 2 1 1 VSS DQ1...
Description 1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP 100万16 × 4银行4CSP移动SDRAM

File Size 112.58K  /  12 Page

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    PESD1CAN-U

NXP Semiconductors
Part No. PESD1CAN-u
OCR Text ...device under test) gnd gnd 450 rg 223/u 50 coax esd tester iec 61000-4-2 network c s = 150 pf; r d = 330 4 ghz digital oscilloscope 10x attenuator unclamped +8 kv esd pulse waveform (iec 61000-4-2 network) unclamped -8 kv esd pulse wav...
Description CAN bus ESD protection diode

File Size 409.56K  /  12 Page

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    Nexperia
Part No. PESD1IVN-u
OCR Text ...r d c s dut (device under test) rg 223/u 50 coax esd tester iec 61000-4-2 ed.2 c s = 150 pf; r d = 330 4 ghz digital oscilloscope 40 db attenuator unclamped +8 kv esd pulse waveform (iec 61000-4-2 network) 0 62 10 v (kv) -2 t (ns) -10 7...
Description In-vehicle network ESD protection diode

File Size 284.00K  /  13 Page

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    IRF1407

International Rectifier
Part No. IRF1407
OCR Text ...V VGS = 10VT VDD = 38V ID = 78A rg = 2.5 VGS = 10V T D Between lead, 6mm (0.25in.) G from package and center of die contact S VGS = 0V VDS =...u Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising fr...
Description Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A?
Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A?)
POWER MOSFET(VDSS=75V, RDS(ON)=0.0078OHM, ID=130Aㄌ)
Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A)
Power MOSFET(Vdss=75V/ Rds(on)=0.0078ohm/ Id=130A)

File Size 126.10K  /  9 Page

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    IRF1607

International Rectifier
Part No. IRF1607
OCR Text ... 38V 130 --- ID = 85A ns 84 --- rg = 1.8 86 --- VGS = 10V D Between lead, 4.5 --- 6mm (0.25in.) nH G from package 7.5 --- and center of die...u.T. + rg -VDD 10V 80 Pulse Width 1 s Duty Factor 0.1 % Fig 10a. Switching Time Tes...
Description Power MOSFET(Vdss=75V, Rds(on)=0.0075ohm, Id=142A)

File Size 179.50K  /  9 Page

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    IRF1704

International Rectifier
Part No. IRF1704
OCR Text ... VDD = 20V --- ID = 100A ns --- rg = 2.5 --- VGS = 10V,See Fig. 10 D Between lead, --- 6mm (0.25in.) nH G from package --- and center of di...u.T. + I D , Drain Current (A) rg - VDD 100 VGS Pulse Width 1 s Duty Factor 0.1 %...
Description Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A?
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A??
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A)
POWER MOSFET(VDSS=40V, RDS(ON)=0.004OHM, ID=170Aㄌ)
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A?)
Power MOSFET(Vdss=40V/ Rds(on)=0.004ohm/ Id=170A)

File Size 100.05K  /  8 Page

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    IRFPS35N50L SIHFPS35N50L SIHFPS35N50L-E3 IRFPS35N50LPBF

Vishay Siliconix
Part No. IRFPS35N50L SIHFPS35N50L SIHFPS35N50L-E3 IRFPS35N50LPBF
OCR Text ...tarting TJ = 25 C, L = 0.97 mH, rg = 25 , IAS = 34 A (see fig. 12). c. ISD 34 A, dI/dt 765 A/s, VDD VDS, TJ 150 C. d. 1.6 mm from case. ...u.T. + - VDD 30 ID , Drain Current (A) 10 V 25 20 15 VDS Pulse width 1 s Duty facto...
Description IRFPS35N50L

File Size 148.36K  /  8 Page

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    IRF2204

International Rectifier
Part No. IRF2204
OCR Text ... VDD = 20V --- ID = 130A ns --- rg = 2.5 --- VGS = 10V D Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact S ...u.T. + ID , Drain Current (A) -VDD 150 10V Pulse Width 1 s Duty Factor 0.1 % 100 ...
Description 40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
AuTOMOTIVE MOSFET

File Size 138.67K  /  9 Page

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