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For silicon-avalanche Found Datasheets File :: 10382 Search Time::3.625ms
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				HARRIS SEMICONDUCTOR INTERSIL[Intersil Corporation] Intersil, Corp.
Part No.	IRF234 IRF235 IRF236 IRF237
OCR Text	... are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of thes...
Description	8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs 8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
File Size	68.51K / 7 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	IRF244 IRF245 IRF246 IRF247
OCR Text	... are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of thes...
Description	14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs 14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETs
File Size	70.04K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF2804S-7P
OCR Text	...extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extrem...
Description	AUTOMOTIVE MOSFET
File Size	260.32K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF2804 IRF2804L IRF2804S
OCR Text	...extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extrem...
Description	40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 40V Single N-Channel HEXFET Power MOSFET in a TO-262 package 40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
File Size	273.77K / 12 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF2805L IRF2805S
OCR Text	...extremely low on-resistance per silicon area. Additional features of this product are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extre...
Description	55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package AUTOMOTIVE MOSFET
File Size	221.43K / 11 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF2807L IRF2807S IRF2807STRL-111 IRF2807STRR
OCR Text	...extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET ...Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Stor...
Description	HEXFET Power MOSFET HEXFET功率MOSFET 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
File Size	122.50K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF2807
OCR Text	...extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET ...Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Stor...
Description	Power MOSFET(Vdss=75V, Id=82A?) Power MOSFET(Vdss=75V, Id=82A)
File Size	149.88K / 8 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF2907Z IRF2907ZL IRF2907ZS IRF2907S IRF2B907Z IRF2B907ZL IRF2B907ZS
OCR Text	...extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extrem...
Description	AUTOMOTIVE MOSFET 汽车MOSFET 75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
File Size	359.66K / 12 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3007
OCR Text	...extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These combine to make this design an ext...
Description	75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package AUTOMOTIVE MOSFET
File Size	146.42K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3205L IRF3205S IRF3205
OCR Text	... extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET ...Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Stor...
Description	Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A?) Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A)
File Size	144.83K / 10 Page	View it Online	Download Datasheet

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