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Philips
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| Part No. |
BF908WR BF908WR_1
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| OCR Text |
...tor in a plastic microminiature sot343r package. The transistor is protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. CAUTION The device is supplied in an antistatic package. The gat... |
| Description |
N-channel dual-gate MOS-FET
From old datasheet system
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| File Size |
65.81K /
7 Page |
 View
it Online |
Download Datasheet
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Philips
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| Part No. |
BF1105WR BF1105R BF1105 BF1105_R_WR_3
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| OCR Text |
...ted in the SOT143B, SOT143R and sot343r plastic packages respectively. QUICK REFERENCE DATA SYMBOL VDS ID Ptot yfs Cig1-ss Crss F Xmod Tj PARAMETER drain-source voltage drain current total power dissipation forward transfer admittance input... |
| Description |
N-channel dual-gate MOS-FETs
From old datasheet system
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| File Size |
113.97K /
16 Page |
View
it Online |
Download Datasheet |
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Quanzhou Jinmei Electro...
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| Part No. |
BF904WR_1 BF904WR-2015 BF904WR-15
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| OCR Text |
...tor in a plastic microminiature sot343r package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. CAUTION
Marking ... |
| Description |
N-channel dual-gate MOS-FET
From old datasheet system
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| File Size |
81.99K /
12 Page |
View
it Online |
Download Datasheet |
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