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				ST Microelectronics SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	HCF40208 HCF40208B HCF40208BEY HCF40208BM1 HCC40208B HCC40208BF
OCR Text	...s Write Enable to Clock t s( WE) ns Write Address to Clock t s (WA ) ns 6/13 HCC/HCF40208B DYNAMIC ELECTRICAL CHARACTERISTICS (continued) Symbol t r, tf Parameter Clock Rise and Fall Time Test Conditions V D D (V) Min...
Description	4 x 4 MULTIPORT REGISTER
File Size	288.57K / 13 Page	View it Online	Download Datasheet

				Cypress Semiconductor
Part No.	CY7C1089DV33-12BAXI CY7C1089DV3312
OCR Text	... ce 2 high) and write enable (we ) input low. data on the eight i/o pins (i/o 0 through i/o 7 ) is then written into the location specif...dd (3.0v). 100 ? s (t power ) after reaching the minimum operating v dd , normal sram operation b...
Description	64-Mbit (8 M × 8) Static RAM
File Size	261.18K / 11 Page	View it Online	Download Datasheet

				Cypress Semiconductor
Part No.	CY7C1081DV33-12BAXI
OCR Text	...nd ce 2 high) and write enable (we ) inputs low. if byte low enable (ble ) is low, then data from i/o pins (i/o 0 through i/o 7 ) is writte...dd (3.0 v). 100 ? s (t power ) after reaching the minimum operating v dd , normal sram operation ...
Description	64-Mbit (4 M x 16) Static RAM 2.0-V data retention
File Size	381.61K / 13 Page	View it Online	Download Datasheet

				Cypress Semiconductor
Part No.	CY7C1069AV33-10ZXC CY7C1069AV3312
OCR Text	...d ce 2 high) and write enable (we ) inputs low. reading from the device is acco mplished by enabling the chip (ce 1 low and ce 2 high) as...dd (3.0v). as soon as 1ms (t power ) after reaching the minimum operating v dd , normal sram opera...
Description	2 M × 8 Static RAM
File Size	363.29K / 12 Page	View it Online	Download Datasheet

				Integrated Silicon Solution, Inc
Part No.	IS64WV1288EEBLL-10KLA1 IS64WV1288EEBLL-10KLA3 IS64WV1288EEBLL-10BA1 IS64WV1288EEBLL-10BLA1 IS64WV1288EEBLL-10BA3 IS61WV1288EEBLL-10BI IS64WV1288EEBLL-10BLA3 IS64WV1288EEBLL-10CTA3 IS64WV1288EEBLL-10CTA1 IS64WV1288EEBLL-10CTLA1 IS64WV1288EEBLL-10CTLA3 IS61WV1288EEBLL-8TLI IS61WV1288EEBLL-10KLI
OCR Text	...tive low write enable ( we ) controls both writing and reading of the memory. the is61/64wv1288eebll is packaged in the je...dd power gnd ground 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 2...
Description	256K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC
File Size	619.77K / 16 Page	View it Online	Download Datasheet

				Cypress Semiconductor
Part No.	CY7C1460AV25-167 CY7C1460AV25-250 CY7C1462AV25-167 CY7C1460AV25-200 CY7C1462AV25-200 CY7C1462AV25-250
OCR Text	...7c1462av25) and a write enable (we ) input. all writes are conducted with on-chip synchronous self-timed write circuitry. three synchronous...dd a a a a a a v ddq v ss dqb dqb dqb v ss v ddq dqb dqb v ss nc v dd dqa dqa v ddq v ss dqa d...
Description	36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL Architecture
File Size	383.03K / 27 Page	View it Online	Download Datasheet


Part No.	K7M401825M-TC90
OCR Text	...access time t oe 3.5 3.5 3.5 ns we bw x clk cke cs 1 cs 2 cs 2 adv oe zz dqa 0 ~ dqd 7 or dqa 0 ~ dqb 8 address 128kx36 , 256kx18 memor...dd v dd v ss dqd 0 dqd 1 v ddq v ssq dqd 2 dqd 3 dqd 4 dqd 5 v ssq v ddq dqd 6 dqd 7 dqpd 80 79 78 7...
Description	256K X 18 ZBT SRAM, 9 ns, PQFP100
File Size	386.80K / 17 Page	View it Online	Download Datasheet

				ETC[ETC]
Part No.	VG3617161BT VG3617161BT-55 VG3617161BT-6 VG3617161BT-7 VG3617161BT-8
OCR Text	...7 VSSQ DQ9 DQ8 VDDQ LDQM WE CAS RAS CS (BS)A11 A10 A0 A1 A2 A3 VDD VDDQ NC UDQM CLK CKE NC A9 A8 A7 A6 A5 A4 VSS Pin Descriptio...DD All other pins not under test = OV) Output Leakage Current Output disable, ( 0V V V ) OUT DDQ LV...
Description	16Mb CMOS Synchronous Dynamic RAM
File Size	1,592.73K / 69 Page	View it Online	Download Datasheet

				VML[Vanguard International Semiconductor]
Part No.	VG3617161DT VG3617161DT-10 VG3617161DT-6 VG3617161DT-7 VG3617161DT-8
OCR Text	...7 VSSQ DQ9 DQ8 VDDQ LDQM WE CAS RAS CS (BS)A11 A10 A0 A1 A2 A3 VDD VDDQ NC UDQM CLK CKE NC A9 A8 A7 A6 A5 A4 VSS Pin Descriptio...DD Output Leakage Current Output disable, ( 0V V ) V OUT DDQ LVTTL Output "H" Level Voltage (lOU...
Description	16Mb CMOS Synchronous Dynamic RAM
File Size	940.00K / 70 Page	View it Online	Download Datasheet

				Samsung semiconductor
Part No.	K7A163631B
OCR Text	...r- formed by the combination of we x and bw when gw is high. and with cs 1 high, adsp is blocked to control signals. burst cycle can be...dd = 2.5 or 3.3v +/- 5% power supply. 5v tolerant inputs except i/o pins. byte writable func...
Description	18MB B-DIE SYNC SRAM SPECIFICATION 100TQFP WITH PB / PB-FREE
File Size	405.04K / 19 Page	View it Online	Download Datasheet

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