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Infineon Technologies A...
INFINEON[Infineon Technologies AG]
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| Part No. |
SPP80N06S2L-09 SPB80N06S2L-09
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| OCR Text |
...
10
2
10
-5
10
-7
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-6
10
-5
10
-4
10
-3
10
-2
s
10
0
VDS
Page 4
tp
2003-05-09
SPP80N06S2L-09 SPB80N06S2L-09
5 Typ. output characteristic ID = f (V DS); T j=25C parameter... |
| Description |
Low Voltage MOSFETs - TO220/263; 80A; 55V; LL; 8.5mOhm
OptiMOS Power-Transistor 的OptiMOS功率晶体
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| File Size |
310.79K /
8 Page |
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ST Microelectronics
意法半导
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
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| Part No. |
STP80N05-09
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| OCR Text |
...TY TECHNOLOGY TYPICAL RDS(on) = 7 m AVALANCHE RUGGED TECHNOLOGY LOW GATE CHARGE HIGH CURRENT CAPABILITY o 175 C OPERATING TEMPERATURE
1 2
...09
THERMAL DATA
Rt hj-case R th j-amb Rthc-sink Tl Thermal Resist ance Junc tion-case Max Thermal ... |
| Description |
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY?POWER MOS TRANSISTOR
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| File Size |
113.50K /
9 Page |
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it Online |
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Molex Electronics Ltd.
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| Part No. |
09-07-5119 A-7674-A11J102A
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| OCR Text |
...eet no. ac1 see sheet 1 1/7/2005 title: kk 156 idt connector 2 document number: created / revised by: che...09-07-0029 a-7674-a02a102a 09-06-0029 a-7674-b02a102a 09-07-0020 a-7674-c02a102a 09-06-0020 a-767... |
| Description |
3.96mm (.156) KK? IDT Trifurcon?/a> Contact, 11 Circuits, Tin (Sn), Feed-Through, 24 and 22 Solid or Fused Stranded, and 22 Stranded, Black ID Strip
3.96mm (.156) KK? IDT Trifurcon Contact, 11 Circuits, Tin (Sn), Feed-Through, 24 and 22 Solid or Fused Stranded, and 22 Stranded, Black ID Strip
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| File Size |
211.31K /
14 Page |
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it Online |
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Price and Availability
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