|
|
![](images/bg04.gif) |
BRILLIANCE SEMICONDUCTOR, INC. BSI[Brilliance Semiconductor]
|
Part No. |
BS616UV8021FI BS616UV8021 BS616UV8021BC BS616UV8021BI BS616UV8021DC BS616UV8021DI BS616UV8021FC
|
OCR Text |
...: 25mA (Max.) operating current 0.6ua (Typ.) CMOS standby current * High speed access time : -70 70ns (Max.) at Vcc=2.0V -10 100ns (Max.) at Vcc=2.0V * Automatic power down when chip is deselected * Three state outputs and TTL compatible * ... |
Description |
Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable 超低功率/电压CMOS SRAM的为512k × 1600万8位开 Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable 超低功率/电压CMOS SRAM的为512k × 16100万8位开
|
File Size |
212.98K /
12 Page |
View
it Online |
Download Datasheet
|
|
![](images/findchips_sm.gif)
Price and Availability
|