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  1.2v-2.5v 50a Datasheet PDF File

For 1.2v-2.5v 50a Found Datasheets File :: 2846    Search Time::2.172ms    
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    Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. QM50TF-HB
OCR Text ... 800.25 22 11 Tab#110, t=0.5 8.1 30+1.5 -0.5 29.5 LABEL 7 27 N 10 43 U V W N 12 910.5 P BuN EuN BvN...2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycl...
Description MEDIUM POWER SWITCHING USE INSULATED TYPE

File Size 85.44K  /  5 Page

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    INFINEON[Infineon Technologies AG]
Infineon Technologies A...
Part No. SGW15N60 SGB15N60 SGP15N60
OCR Text ...60 C G E P-TO-220-3-1 (TO-220AB) P-TO-263-3-2 (D-PAK) P-TO-247-3-1 (TO-263AB) (TO-247AC) * Complete product spectrum and P...2V 3V 4V 5V 1V 2V 3V 4V 5V VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typic...
Description IGBTs & DuoPacks - 15A 600V TO247AC IGBT
IGBTs & DuoPacks - 15A 600V TO263AB SMD IGBT
Fast S-IGBT in NPT-Technology
Fast IGBT in NPT-technology

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    Infineon Technologies A...
INFINEON[Infineon Technologies AG]
SIEMENS A G
Part No. SGW20N60 Q67040-S4236 Q67041-A4712-A2 Q67041-A4712-A4 SGB20N60 SGP20N60
OCR Text ...nction and storage temperature 1) ICpul s VGE EAS 80 80 20 115 V mJ tSC Ptot Tj , Tstg 10 179 -55...+150 s W C VGE = 15V,...2V 3V 4V 5V 0A 0V 1V 2V 3V 4V 5V VCE, COLLECTOR-EMITTER VOLTAGE Figure...
Description    Fast S-IGBT in NPT-technology
Fast S-IGBT in NPT-technology 快速的S -不扩散核武器条约IGBT的技
Fast S-IGBT in NPT-technology( NPT ???涓??蹇??S-IGBT)

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    INFINEON[Infineon Technologies AG]
Part No. SKW20N60HS
OCR Text ...ee lead plating; RoHS compliant 1 Qualified according to JEDEC for target applications Complete product spectrum and PSpice Models : http://...2V 4V 6V 0A 0V 2V 4V 6V VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output ch...
Description High Speed IGBT in NPT-technology

File Size 354.97K  /  14 Page

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    INFINEON[Infineon Technologies AG]
Part No. SKW25N120
OCR Text ...ee lead plating; RoHS compliant 1 * Qualified according to JEDEC for target applications * Complete product spectrum and PSpice Models : htt...2V 3V 4V 5V 6V 7V 1V 2V 3V 4V 5V 6V 7V VCE, COLLECTOR-EMITTER...
Description Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

File Size 333.32K  /  13 Page

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    PM50B4LA060

Mitsubishi Electric Semiconductor
Part No. PM50B4LA060
OCR Text .... For example, typical Vce(sat)=1.55V @Tj=125C b) Over-temperature protection by detecting Tj of the CSTBT TM chips and error output is poss...2V peak to peak Oct. 2005 MITSUBISHI <INTELLIGENT POWER MODULES> PM50B4LA060 FLAT-BASE TYP...
Description FLAT-BASE TYPE INSULATED PACKAGE

File Size 142.02K  /  8 Page

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    INFINEON[Infineon Technologies AG]
Part No. SKW30N60
OCR Text ...iode C G E P-TO-247-3-1 (TO-247AC) * Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type SKW30N60 ...2V 3V 4V 5V 1V 2V 3V 4V 5V VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typic...
Description IGBTs & DuoPacks - 30A 600V TO247AC IGBT Diode
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

File Size 391.97K  /  13 Page

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    AAT2805 AAT2805IXN-4.5-T1

Advanced Analog Technology, Inc.
Part No. AAT2805 AAT2805IXN-4.5-T1
OCR Text ...the charge pump operates in 1X, 1.5X, or 2X mode, where the mode of operation is automatically selected by comparing the forward voltage of ...2V; 20mA Load) AAT2805 Turn-On to 1.5X Mode (VIN = 3.5V; 20mA Load) EN (2V/div) CP (2V/div...
Description Dual High Efficiency Charge Pump for White LED and Flash Applications

File Size 657.00K  /  16 Page

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    SGP20N60HS SGW20N60HS

INFINEON[Infineon Technologies AG]
Part No. SGP20N60HS SGW20N60HS
OCR Text ...-S4498 Q67040-S4499 P-TO-220-3-1 (TO-220AB) P-TO-247-3-1 (TO-247AC) C G E Type SGP20N60HS SGW20N60HS Maximum Ratings Parameter ...2V 4V 6V 0A 0V 2V 4V 6V VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output ch...
Description High Speed IGBT in NPT-technology

File Size 429.45K  /  12 Page

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    SKW20N60 Q67040-S4242

INFINEON[Infineon Technologies AG]
Part No. SKW20N60 Q67040-S4242
OCR Text ...nction and storage temperature 1) ICpul s IF 80 80 40 20 IFpul s VGE tSC Ptot Tj , Tstg 80 20 10 179 -55...+150 V s W C VGE = 1...2V 3V 4V 5V 0A 0V 1V 2V 3V 4V 5V VCE, COLLECTOR-EMITTER VOLTAGE Figure...
Description Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

File Size 272.85K  /  14 Page

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For 1.2v-2.5v 50a Found Datasheets File :: 2846    Search Time::2.172ms    
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