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  2.8volts Datasheet PDF File

For 2.8volts Found Datasheets File :: 47    Search Time::1.125ms    
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    MRF8S9200NR310

Freescale Semiconductor, Inc
Part No. MRF8S9200NR310
OCR Text ...rier w--cdma performance: v dd =28volts,i dq = 1400 ma, p out = 58 watts avg., iq magnitude clipping, channel bandwidth = 3.84 mhz, input signal par = 7.5 db @ 0.01% probability on ccdf. frequency g ps (db) d (%) output par (db) acpr (dbc)...
Description RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET

File Size 484.00K  /  13 Page

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    MD7IC2250GNR1 MD7IC2250NBR1 MD7IC2250NR1

Freescale Semiconductor, Inc
Part No. MD7IC2250GNR1 MD7IC2250NBR1 MD7IC2250NR1
OCR Text ...rier w--cdma performance: v dd =28volts, i dq1(a+b) =80ma,i dq2(a+b) = 520 ma, p out = 5.3 watts avg., iq magnitude clipping, channel bandwidth = 3.84 mhz, input signal par = 7.5 db @ 0.01% probability on ccdf. frequency g ps (db) pae (%) a...
Description RF LDMOS Wideband Integrated Power Amplifiers

File Size 704.90K  /  22 Page

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    MD7IC2755GNR1 MD7IC2755NR1

Freescale Semiconductor, Inc
Part No. MD7IC2755GNR1 MD7IC2755NR1
OCR Text ...oherty wimax performance: v dd =28volts,i dq1a =i dq1b = 80 ma, i dq2b = 275 ma, v g2a =1.7vdc,p out = 10 watts avg., f = 2700 mhz, ofdm 802.16d, 64 qam 3 / 4 , 4 bursts, 10 mhz channel bandwidth, input signal par = 9. 5 db @ 0.01% probabil...
Description RF LDMOS Wideband Integrated Power Amplifiers

File Size 1,021.52K  /  22 Page

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    MRF8S9170NR310

Freescale Semiconductor, Inc
Part No. MRF8S9170NR310
OCR Text ...rier w--cdma performance: v dd =28volts,i dq = 1000 ma, p out = 50 watts avg., iq magnitude clipping, channel bandwidth = 3.84 mhz, input signal par = 7.5 db @ 0.01% probability on ccdf. frequency g ps (db) d (%) output par (db) acpr (dbc)...
Description RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET

File Size 455.97K  /  13 Page

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    MRF8S9202N12 MRF8S9202GNR3 MRF8S9202NR3

Freescale Semiconductor, Inc
Part No. MRF8S9202N12 MRF8S9202GNR3 MRF8S9202NR3
OCR Text ...rier w--cdma performance: v dd =28volts, i dq = 1700 ma, p out = 75 watts avg., iq magnitude clipping, channel bandwidth = 3.84 mhz, input signal par = 7.5 db @ 0.01% probability on ccdf. frequency g ps (db) ? d (%) output par (db) acpr (db...
Description RF Power Field Effect Transistors

File Size 391.04K  /  14 Page

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    MRF8S9202N

Freescale Semiconductor, Inc
Part No. MRF8S9202N
OCR Text ...rier w--cdma performance: v dd =28volts,i dq = 1300 ma, p out = 58 watts avg., iq magnitude clipping, channel bandwidth = 3.84 mhz, input signal par = 7.5 db @ 0.01% probability on ccdf. frequency g ps (db) d (%) output par (db) acpr (dbc)...
Description RF Power Field Effect Transistor N-Channel Enhancement--Mode Lateral MOSFET

File Size 644.74K  /  13 Page

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    AFT21S232SR3 AFT21S230SR3

Freescale Semiconductor, Inc
Part No. AFT21S232SR3 AFT21S230SR3
OCR Text ...rier w--cdma performance: v dd =28volts, i dq = 1500 ma, p out = 50 watts avg., input signal par = 9.9 db @ 0.01% probability on ccdf. frequency g ps (db) d (%) output par (db) acpr (dbc) irl (db) 2110 mhz 16.7 30.5 7.2 --35.7 -- 1 9 2140 ...
Description RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs

File Size 561.02K  /  15 Page

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    RC1206FR--108R2L B41694A5477Q7 C5750X7S2A106M AFT21S230S232S RC1206FR-108R2L ATC100B0R3BT500XT ATC100B0R6BT500XT ATC100B

Freescale Semiconductor, Inc
Freescale Semiconductor...
Part No. RC1206FR--108R2L B41694A5477Q7 C5750X7S2A106M AFT21S230S232S RC1206FR-108R2L ATC100B0R3BT500XT ATC100B0R6BT500XT ATC100B6R8BT500XT CDR34BX104AKWS
OCR Text ...rier w--cdma performance: v dd =28volts, i dq = 1500 ma, p out = 50 watts avg., input signal par = 9.9 db @ 0.01% probability on ccdf. frequency g ps (db) ? d (%) output par (db) acpr (dbc) irl (db) 2110 mhz 16.7 30.5 7.2 --35.7 -- 1 9 2140...
Description RF Power LDMOS Transistors

File Size 432.54K  /  15 Page

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    MD8IC970GNR1 MD8IC970NR1 MD8IC970NR11

Freescale Semiconductor, Inc
Part No. MD8IC970GNR1 MD8IC970NR1 MD8IC970NR11
OCR Text ...l two--tone performance: v dd1 =28volts,v dd2 =25volts, i dq1(a+b) =60ma,i dq2(a+b) = 550 ma, p out = 35 watts avg. frequency g ps (db) pae (%) imd (dbc) 850 mhz 30.6 40.1 --30.5 900 mhz 31.9 42.4 --31.0 940 mhz 32.6 42.1 --31.3 ? capable o...
Description RF LDMOS Wideband Integrated Power Amplifiers

File Size 505.66K  /  17 Page

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    MRF7S21170HR312 MRF7S21170HSR3

Freescale Semiconductor, Inc
Freescale Semiconductor...
Part No. MRF7S21170HR312 MRF7S21170HSR3
OCR Text ...rier w--cdma performance: v dd =28volts,i dq = 1400 ma, p out = 50 watts avg., f = 2167.5 mhz, iq magnitude clipping, channel bandwidth = 3.84 mhz, input signal par = 7.5 db @ 0.01% probability on ccdf. power gain ? 16 db drain efficiency ?...
Description RF Power Field Effect Transistors

File Size 446.78K  /  17 Page

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For 2.8volts Found Datasheets File :: 47    Search Time::1.125ms    
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